HW-105A

InSb Hall Element
HW-105A
Shipped in packet-tape reel(5,000pcs per reel)
Notice : It is requested to read and accept "IMPORTANT NOTICE"
written on the back of the front cover of this catalogue.
●Absolute Maximum Ratings
Item
Symbol
Max. Input Current
Ⅰc
Unit
20
mA
−40 ∼ ＋110
℃
−40 ∼ ＋125
℃
Const. Current Drive
Operating Temp. Range Topr.
Storage Temp. Range
Limit
Tstg.
Note : For constant-voltage drive, stay within this input voltage derating
curve envelope.
●Classification of Output Hall Voltage (VH)
Rank
VH [ mV ]
Conditions
C
168 ∼ 204
D
196 ∼ 236
E
228 ∼ 274
B=50mT, Vc=1V
Constant Voltage Drive
Note : When ordering, specify 3-rank or wider range(e·g·,C,D,E).
●Electrical Characteristics(Ta=25℃)
Item
Symbol
Conditions
Output Hall Voltage
VH
Const. Voltage Drive
B=50mT, Vc=1V
Input Resistance
Rin
Min.
Max.
Unit
168
274
mV
B=0mT,Ⅰc=0.1mA
250
450
Ω
Output Resistance Rout B=0mT,Ⅰc=0.1mA
250
450
Ω
−10
＋10
mV
Typ.
Offset Voltage
Vos(Vu) B=0mT, Vc=1V
Average on 0∼40℃
B=50mT,Ⅰc=5mA
※
Average on 0∼40℃
Temp. Coefficient of Rin αRin
B=0mT,Ⅰc=0.1mA
Temp. Coefficient of VH
※
αVH
%/℃
−1.8
%/℃
1.0
100V D.C
Dielectric Strength
−1.8
Input Current：IC［mA］
●Input Current Derating Curve
※
MΩ
Input Resistance
Rin : 250∼450Ω
20
10
0
–60
–40
–20
0
Notes : 1. VH = VHM – Vos(Vu) (VHM:meter indication)
2. VH =
3. Rin =
1
VH (T3) – VH (T2)
VH (T1) X
(T3 – T2)
1
Rin (T3) – Rin (T2)
Rin (T1) X
(T3 – T2)
20
40
60
80
Ambient Temp.:Ta［℃］
100
120
Note : Rin of Hall element decreases rapidly as ambient temperature
increases. Ensure compliance with input current derating curve envelope,
throughout the operating temperature range.
X 100
X 100
T1 = 20˚C, T2 = 0˚C, T3 = 40˚C
●Dimensional Drawing(Unit : mm)
●Input Voltage Derating Curve
2.1±0.1
0.25
1
sensor
center
φ0.3
0∼0.1
N
2.1±0.2
1.25±0.1
2
5°
3
0.25
0.3
–40
–20
0
20
40
60
80
Ambient Temp.:Ta［℃］
100
120
Note : For constant-voltage drive, stay within this input voltage derating
curve envelope.
Pinning
Input
1（±）
3（ ）
Output
2（±）
4（ ）
±
0.55
0
–60
±
＋0.1
0
0.1
20
1
5°
4
5°
5°
Input Resistance
Rin : 250∼450Ω
2
0.4
0.3
Input Voltage：VC［V］
1.3
0.4
HW-105A
•Please be aware that our products are not intended for use in life support equipment, devices, or systems. Use of our products in such applications requires the
advance written approval of our sales staff.
Certain applications using semiconductor devices may involve potential risks of personal injury, property damage, or loss of life. In order to minimize these risks,
adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of our products in such
applications is understood to be fully at the risk of the customer using our devices or systems.
a
●Characteristic Curves
Rin-T
VH-B
1400
350
Output Hall Voltage:VH [mV]
Ic const
Input Resistance:Rin [Ω]
1200
1000
800
600
400
300
Vc const
250
Ic = 5 [mA]
Vc = 1 [V]
Ta =25 [℃]
200
0
–50
0
50
100
100
0
0
150
Ambient Temperature:Ta [℃]
VH-T
10
20
30
Magnetic Flux Density: B [mT]
40
50
VH-Vc, VH-Ic
800
1000
Ic const
Vc const
750
Ic = 5 [mA]
Vc = 1 [V]
B = 50 [mT]
Ic
500
250
Vc
0
–50
0
50
100
Output Hall Voltage:VH [mV]
Ic const
Vc const
600
400
Vc
g
200
0
0
150
Ic
B =50 [mT]
Ta =25 [℃]
5
10
15
0.5
1.0
Input Current: Ic [mA]
Input Voltage: Vc [V]
1.5
Ambient Temperature:Ta [℃]
Vos(Vu)-T（For reference only）
20
Ic const
18
Ic const
16
Vc const
16
Vc const
14
B = 0 [mT]
Ta =25 [℃]
14
Ic = 5 [mA]
Vc = 1 [V]
B = 0 [mT]
Ic
10
8
6
4
Vc
Offset Voltage:Vos [mV]
18
12
12
j
10
Ic
8
6
4
Vc
2
2
0
–50
0
50
Ambient Temperature: Ta [℃]
20 Ic:[mA]
2.0 Vc:[V]
Vos(Vu)-Vc, Vos(Vu)-Ic（For reference only）
20
Offset Voltage:Vos [mV]
c
Vc
150
50
200
Output Hall Voltage:VH [mV]
Ic
100
150
※Magnetic Flux Density
1[mT]=10[G]
0
0
5
0.5
10
15
1.0
Input Current:Ic [mA]
Input Voltage:Vc [V]
1.5
20 Ic:[mA]
2.0 Vc:[V]
In This Example : Rin=350〔Ω〕, Vos=1.9〔mV〕, [Vc=1〔V〕]
21
IMPORTANT NOTICE
 These products and their specifications are subject to change without notice.
When you consider any use or application of these products, please make
inquiries the sales office of Asahi Kasei Microdevices Corporation (AKM) or
authorized distributors as to current status of the products.
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information contained in this document are provided only to illustrate the
operation and application examples of the semiconductor products. You are
fully responsible for the incorporation of these external circuits, application
circuits, software and other related information in the design of your
equipments. AKM assumes no responsibility for any losses incurred by you or
third parties arising from the use of these information herein. AKM assumes no
liability for infringement of any patent, intellectual property, or other rights in
the application or use of such information contained herein.
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require an export license or other official approval under the law and
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exchange, or strategic materials.
 AKM products are neither intended nor authorized for use as critical
componentsNote1) in any safety, life support, or other hazard related device or
systemNote2), and AKM assumes no responsibility for such use, except for the
use approved with the express written consent by Representative Director of
AKM. As used here:
Note1) A critical component is one whose failure to function or perform
may reasonably be expected to result, whether directly or indirectly, in the
loss of the safety or effectiveness of the device or system containing it,
and which must therefore meet very high standards of performance and
reliability.
Note2) A hazard related device or system is one designed or intended for
life support or maintenance of safety or for applications in medicine,
aerospace, nuclear energy, or other fields, in which its failure to function
or perform may reasonably be expected to result in loss of life or in
significant injury or damage to person or property.
 It is the responsibility of the buyer or distributor of AKM products, who
distributes, disposes of, or otherwise places the product with a third party, to
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liability for and hold AKM harmless from any and all claims arising from the
use of said product in the absence of such notification.
June 2, 2010