Data Sheet Midium Power Transistors (±30V / ±1A) MP6Z11 Structure NPN/PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) MPT6 (Dual) Features Low saturation voltage, typically VCE (sat) = 0.35V (Max.) (I C / I B= 500mA / 25mA) VCE (sat) = -0.35V (Max.) (I C / I B= -500mA / -25mA) (1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1 Applications Low Frequency Amplifier Driver Packaging specifications Type Emitter Base Collector Emitter Base Collector (6) (5) (4) (1) (2) (3) Inner circuit (Unit : mm) Package MPT6 Code TR Basic ordering unit (pieces) 1000 (6) (5) (4) Tr.2 Absolute maximum ratings (Ta = 25C) <Tr.1> Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage Emitter-base voltage VCEO 30 6 1 2 V V A A Symbol Limits Unit Collector-base voltage VCBO -30 V Collector-emitter voltage Emitter-base voltage VCEO VEBO IC ICP *1 -30 -6 V V -1 -2 A A Parameter Collector current DC Pulsed VEBO IC ICP *1 (1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1 Emitter Base Collector Emitter Base Collector Tr.1 (1) (2) (3) <Tr.2> Parameter Collector current DC Pulsed <Tr.1 and Tr.2> Parameter Power dissipation Junction temperature Range of storage temperature Symbol PD *2 Limits Unit 2.0 1.4 W/Total W/Element PD *2 Tj 150 Tstg -55 to 150 C C *1 Pw=10ms, Single Pulse *2 Mounted on a 40 x 40 x 0.7[mm] ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/7 2011.02 - Rev.A MP6Z11 Data Sheet Electrical characteristics (Ta=25°C) <Tr.1> Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO 30 - - V IC= 1mA Collector-base breakdown voltage BVCBO 30 - - V IC= 10μA Emitter-base breakdown voltage BVEBO 6 - - V IE= 10μA Collector cut-off current ICBO - - 100 nA VCB= 30V Emitter cut-off current IEBO - - 100 nA VEB= 6V VCE(sat) - 120 350 mV IC= 500mA, I B= 25mA hFE 270 - 680 - - 320 - MHz Collector-emitter staturation voltage DC current gain Transition frequency *1 fT *1 Collector output capacitance Cob - 7 - pF Turn-on time ton *2 - 90 - ns Storage time tstg *2 - 300 - ns t f *2 - 60 - ns Fall time VCE= 2V, IC= 100mA VCE= 2V IE=-100mA, f=100MHz VCB= 10V, IE=0A f=1MHz IC= 0.5A, I B1= 25mA, IB2=-25mA, V CC~ _ 5V *1 Pulsed *2 See switching time test circuit <Tr.2> Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO -30 - - V IC= -1mA Collector-base breakdown voltage BVCBO -30 - - V IC= -10μA Emitter-base breakdown voltage Parameter Conditions BVEBO -6 - - V IE= -10μA Collector cut-off current ICBO - - -100 nA VCB= -30V Emitter cut-off current IEBO VEB= -6V - - -100 nA *1 VCE(sat) - -150 -350 mV IC= -500mA, I B= -25mA hFE 270 - 680 - VCE= -2V, I C= -100mA - 320 - MHz VCE= -2V IE=100mA, f=100MHz Cob - 7 - pF Turn-on time ton *2 - 60 - ns Storage time tstg *2 - 160 - ns t f *2 - 50 - ns Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Fall time fT *1 VCB= -10V, I E=0A f=1MHz IC= -0.5A, I B1= -25mA, _ -5V IB2=25mA, VCC ~ *1 Pulsed *2 See switching time test circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/7 2011.02 - Rev.A Data Sheet MP6Z11 Electrical characteristic curves (Ta=25C) 〈Tr.1〉 Fig.1 Typical Output Characteristics 5.0mA 4.0mA 3.0mA Fig.2 DC Current Gain vs. Collector Current(Ⅰ) 2.0mA 0.8 1000 1.5mA Ta=25°C COLLECTOR CURRENT : IC[A] 0.7 DC CURRENT GAIN :hFE 0.6 1.0mA 0.5 0.4 IB=0.5mA 0.3 VCE=5V 3V 100 0.2 0.1 Ta=25°C 0.0 10 0.0 1.0 2.0 3.0 4.0 5.0 1 10 COLECTOR TO EMITTER VOLTAGE:VCE[V] Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅰ) 1000 10 100 COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] DC CURRENT GAIN :hFE 1000 COLLECTOR CURRENT :IC[mA] Fig.3 DC Current Gain vs. Collector Current(Ⅱ) Ta=125°C 75°C 25°C -40°C VCE=2V Pulsed Ta=25°C VCE=2V 1 0.1 IC/IB=50 20 10 0.01 0.001 10 1 10 100 1 1000 10 100 1000 COLLECTOR CURRENT :IC[mA] COLLECTOR CURRENT :IC[mA] Fig.6 Ground Emitter Propagation Characteristics Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅱ) 1000 1 VCE=2V Pulsed IC/IB=20 Pulsed COLLECTOR CURRENT : I C [mA] COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] 100 0.1 Ta=125°C 75°C 25°C -40°C Ta=125°C 75°C 25°C -40°C 100 10 1 0.01 1 10 100 0 1000 COLLECTOR CURRENT :IC[mA] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.5 1 1.5 BASE TO EMITTER VOLTAGE :VBE[V] 3/7 2011.02 - Rev.A Data Sheet MP6Z11 Fig8. Gain Bandwidth Product vs. Emitter Current Fig.7 Emitter input capacitance vs. Emitter-Base Voltage Collector output capacitance vs.Collector-Base Voltage 1000 Ta=25°C f=1MHz IC=0A Cib TRANSITION FREQUENCY :fT[MHz] COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) 100 10 Cob 1 Ta=25°C VCE=2V f=100MHz 100 10 0.1 1 10 100 10 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) 100 1000 EMITTER CURRENT :IE[mA] Fig9. SAFE OPERATING AREA 10 COLLECTOR CURRENT : I C (A) 1ms 10ms 1 100ms 0.1 DC (Mounted on a ceramic board) 0.01 Ta=25°C When one element operated Single non repetitive pulse 0.001 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE :VCE(V) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/7 2011.02 - Rev.A Data Sheet MP6Z11 〈Tr.2〉 Fig.1 Typical Output Characteristics -5.0mA -4.0mA Fig.2 DC Current Gain vs. Collector Current(Ⅰ) -3.0mA -0.50 1000 -0.45 -0.40 -1.5mA DC CURRENT GAIN :hFE COLLECTOR CURRENT :IC[A] Ta=25°C -2.0mA -0.35 -0.30 -1.0mA -0.25 -0.20 -0.15 VCE=-5V -2V 100 IB=-0.5mA -0.10 -0.05 Ta=25°C 0.00 10 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -1 -10 Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅰ) Fig.3 DC Current Gain vs. Collector Current(Ⅱ) -10 COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] 1000 DC CURRENT GAIN :hFE -1000 COLLECTOR CURRENT :IC[mA] COLECTOR TO EMITTER VOLTAGE:VCE[V] Ta=125°C 75°C 25°C -40°C 100 VCE=-2V Pulsed Ta=25°C Pulsed -1 IC/IB=50 20 10 -0.1 -0.01 10 -1 -10 -100 -1 -1000 -10 -100 COLLECTOR CURRENT :IC[mA] COLLECTOR CURRENT :IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅱ) Fig.6 Ground Emitter Propagation Characteristics -1000 -1000 -1 VCE=-2V Pulsed COLLECTOR CURRENT :IC[mA] COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] -100 -0.1 Ta=125°C 75°C 25°C -40°C -100 -10 Ta=125°C 75°C 25°C -40°C IC/IB=20 Pulsed -1 -0.01 -1 -10 -100 0 -1000 COLLECTOR CURRENT :IC[mA] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. -0.5 -1 -1.5 BASE TO EMITTER VOLTAGE :VBE[V] 5/7 2011.02 - Rev.A Data Sheet MP6Z11 Fig.7 Emitter input capacitance vs. Emitter-Base Voltage Collector output capacitance vs.Collector-Base Voltage Fig8. Gain Bandwidth Product vs. Emitter Current 1000 Ta=25°C VCE=-2V f=100MHz Ta=25°C f=1MHz IC=0A Cib TRANSITION FREQUENCY : f T [MHz] COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) 100 10 Cob 1 100 10 -0.1 -1 -10 -100 10 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) 100 1000 EMITTER CURRENT :IE[mA] Fig9. SAFE OPERATING AREA -10 COLLECTOR CURRENT : IC (A) 1ms 10ms -1 100ms -0.1 DC (Mounted on a ceramic board) -0.01 Ta=25°C When one element operated Single non repetitive pulse -0.001 -0.1 -1 -10 -100 COLLECTOR TO EMITTER VOLTAGE :VCE(V) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/7 2011.02 - Rev.A MP6Z11 Data Sheet Switching time test circuit RL=10Ω <Tr.1> I B1 VIN IC VCC ~ _ 5V IB2 Pw ~ _50μs DUTY CYCLE≦1% Pw BASE CURRENT WAVEFORM IB1 IB2 COLLECTOR CURRENT WAVEFORM t on tstg tf 90% IC 10% <Tr.2> RL=10Ω IB1 VIN Pw IC VCC~_ -5V IB2 _ 50μs Pw ~ DUTY CYCLE≦1% IB2 BASE CURRENT WAVEFORM IB1 ton COLLECTOR CURRENT WAVEFORM tstg tf 90% IC 10% www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/7 2011.02 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A