c11be47afe14e5075161964979c26166

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-723 Plastic-Encapsulate Diodes
CESD12VD7
Uni-direction ESD Protection Diode
DESCRIPTION
SOD-723
Designed to protect voltage sensitive electronic components from ESD and other
transients. Excellent clamping capability, low leakage, and fast response time provide
best in class protection on designs that are exposed to ESD.
The combination of small size, high level of ESD protection makes them a flexible
solution for applications such as Digital cameras,cellular phones, and MP3 Players. It
is designed to replace multiplayer varistors (MLV) in consumer equipments
applications such as mobile phone, notebook, PAD, STB, LCD TV etc.
FEATURES
z
Uni-directional ESD protection of one line
z
Fast response time
z
Reverse stand−off voltage: 12V
z
JESD22-A114-B ESD Rating of class 3B per human
z
Low reverse clamping voltage
z
Low leakage current
z
Excellent package:1.00mm×0.60mm×0.55mm
body model
z
IEC 61000-4-2 Level 4 ESD protection
APPLICATIONS
z
Computers and peripherals
z
Portable electronics
z
Digital Cameras
z
Mp3 Players
z
Audio and video equipment
z
Other electronics equipments communi-
z
Cellular handsets and accessories
cation systems
MARKING
E3 = Device code
E3
The marking bar indicates the cathode
Front side
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CESD12VD7
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Symbol
IEC 61000-4-2 ESD Voltage
Air Model
Per Human Body Model
ESD Voltage
(1)
VESD
Machine Model
Peak Pulse Power
±25
±16
kV
±0.4
(2)
220
W
(2)
9
A
PPP
Peak Pulse Current
Unit
±25
Contact Model
JESD22-A114-B ESD Voltage
Limit
IPP
Lead Solder Temperature − Maximum (10 Second Duration)
TL
260
℃
Junction Temperature
Tj
150
℃
Tstg
-55 ~ +150
℃
Storage Temperature Range
(1).Device stressed with ten non-repetitive ESD pulses.
(2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.
ESD standards compliance
IEC61000-4-2 Standard
JESD22-A114-B Standard
Contact Discharge
Air Discharge
ESD Class
Human Body Discharge V
Level
Test Voltage kV
Level
Test Voltage kV
0
0~249
1
2
1
2
2
4
2
4
1A
1B
1C
250~499
500~999
1000~1999
3
6
3
8
4
8
4
15
2
3A
3B
2000~3999
4000~7999
8000~15999
ESD pulse waveform according to IEC61000-4-2
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8/20μs pulse waveform according to IEC 61000-4-5
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CHANGJIANG ELEC.TECH.
CESD12VD7
ELECTRICAL PARAMETER
Symbol
Parameter
VC
Clamping Voltage @ IPP
IPP
Peak Pulse Current
VBR
Breakdown Voltage @ IT
IT
Test Current
IR
Reverse Leakage Current @ VRWM
VRWM
Reverse Standoff Voltage
VF
Forward [email protected] IF
IF
Forward Current
V-I characteristics for a uni-directional TVS
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Reverse stand off voltage
Reverse leakage current
Breakdown voltage
Clamping voltage
Symbol
Test conditions
Min
Typ
Max
Unit
12
V
1
μA
16.5
V
IPP=9A
24
V
0.9
V
(1)
VRWM
IR
V(BR)
(2)
VC
VRWM=12V
IT=1mA
Forward voltage
VF
IF=10mA
Junction capacitance
CJ
VR=0V,f=1MHz
13.5
45
pF
(1).Other voltages available upon request.
(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5
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CHANGJIANG ELEC.TECH.
CESD12VD7
TYPICAL CHARACTERISTICS
Forward
Characteristics
Reverse
100
Pulsed
Pulsed
80
(mA)
(mA)
T=
a 2
5℃
REVERSE CURRENT IR
10
T=
a 1
00
℃
IF
FORWARD CURRENT
Characteristics
100
1
60
Ta=25℃
40
Ta=100℃
20
0.1
0.4
0.5
0.6
0.7
0.8
FORWARD VOLTAGE
VC ——
30
VF
0.9
0
1.0
0
4
8
12
REVERSE VOLTAGE
(V)
16
VR
20
(V)
Capacitance Characteristics
IPP
60
Ta=25℃
Ta=25℃
f=1MHz
tp=8/20us
JUNCTION CAPACITANCE
CJ (pF)
CLAMPING VOLTAGE VC(V)
50
25
20
15
40
30
20
10
0
2
4
6
8
10
10
REVERSE PEAK PULSE CURRENT IPP(A)
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0
2
4
6
REVERSE VOLTAGE
4
8
VR
10
12
(V)
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CESD12VD7
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CESD12VD7
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TAPE AND REEL INFORMATION
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