ROHM RB095B-90TL

Data Sheet
Schottky Barrier Diode
RB095B-90
Dimensions(Unit : mm)
Land size figure(Unit : mm)
6.0
6.0
Applications
General rectification
1.6
1.6
3.0 2.0
Features
1)Power mold type.(CPD)
2)Low VF
3)High reliability
CPD
Construction
Silicon epitaxial planar
2.3 2.3
Structure
(2)
ROHM : CPD
JEITA : SC-63
Manufacture Date
(1) (3)
Taping specifications(Unit : mm)
10.1±0.1
φ3.0±0.1
8.0±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Limits
Symbol
90
VRM
90
VR
6
Io
45
IFSM
150
Tj
40 to 150
Tstg
(*1) Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=122C
Forward voltage
Reverse current
Thermal impedance
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Symbol
VF
IR
Min.
-
jc
C
C
Typ.
-
Max.
0.75
-
-
150
A
-
-
6.0
C/W
1/3
2.7±0.2
Unit
V
V
A
A
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz / 1cyc)(*1)
Junction temperature
Storage temperature
Electrical characteristics(Ta=25C)
Parameter
0∼0.5
6.8±0.1
13.5±0.2
TL
0.4±0.1
10.1±0.1
7.5±0.05
2.5±0.1
φ1.55±0.1
0
8.0±0.1
16.0±0.2
2.0±0.05
4.0±0.1
Unit
V
Conditions
IF=3.0A
VR=90V
junction to case
2011.04 - Rev.F
Data Sheet
RB095B-90
Electrical characteristics curves
Ta=125C
REVERSE CURRENT : IR(uA)
Ta=125C
Ta=75C
Ta=25C
Ta=-25C
0.1
Ta=25C
IF=3A
n=30pcs
730
AVE : 711.1mV
710
700
0.1
0
Ta=25C
VR=90V
n=30pcs
160
140
120
100
80
60
40
AVE : 13.7uA
1
0
1cyc
8.3ms
150
100
AVE : 86.0A
0
Ta=25C
f=1MHz
VR=0V
n=10pcs
380
370
360
350
340
AVE : 357.9pF
330
320
300
Ct DISPERSION MAP
1000
Ta=25C
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
Ifsm
8.3ms 8.3ms
1cyc
100
15
10
AVE : 8.30ns
10
1
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30
390
310
0
IFSM DISPERSION MAP
20
400
0
5
10
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
20
30
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
10
IR DISPERSION MAP
300
200
100
10 20 30 40 50 60 70 80 90
180
VF DISPERSION MAP
Ifsm
f=1MHz
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
690
50
Ta=-25C
1
200
740
250
Ta=25C
10
100 200 300 400 500 600 700 800 900
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
REVERSE CURRENT:IR(uA)
0
FORWARD VOLTAGE : V F(mV)
100
0.01
0.01
720
Ta=75C
1000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
1
1000
PEAK SURGE
FORWARD CURRENT:I FSM(A)
FORWARD CURRENT : I F(A)
10000
Ta=150C
CAPACITANCE BETWEEN TERMINALS :
Ct(pF)
Ta=150C
100000
10
trr DISPERSION MAP
2/3
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
2011.04 - Rev.F
Data Sheet
RB095B-90
100
1000
t
100
Mouted on epoxy board
IM=100mA
1
1ms
100
IF=3A
tim
0.1
1
10
100
D=1/2
DC
1
15
10
DC
0
10
20
30
40
50
60
70
80
90
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
6
T
8
10
0A
Io
0V
VR
t
VR
t
D=t/T
VR=45V
Tj=150C
D=1/2
5
Sin(=180)
T
DC
10
D=t/T
VR=45V
Tj=150C
D=1/2
5
Sin(=180)
0
0
0
4
Io
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Sin(=180)
2
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
0V
4
REVERSE POWER
DISSIPATION : PR (W)
0
TIME : t(s)
Rth-t CHARACTERISTICS
0A
2
2
1000
15
3
Sin(=180)
4
0
0.01
TIME : t(ms)
IFSM-t CHARACTERISTICS
5
DC
D=1/2
6
300us
0.1
0.001
10
10
8
Rth(j-c)
10
FORWARD POWER
DISSIPATION : Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
PEAK SURGE
FORWARD CURRENT:I FSM(A)
Ifsm
1
10
Rth(j-a)
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(C)
DERATING CURVE(Io-Ta)
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(C)
DERATING CURVE(Io-Tc)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
30
25
AVE : 26.70kV
20
15
AVE : 9.60kV
10
5
0
C=200pF
R=0
C=100pF
R=1.5k
ESD DISPERSION MAP
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2011.04 - Rev.F
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R1120A