SKiM301TMLI12E4B Absolute Maximum Ratings Symbol Conditions Values Unit IGBT 1 VCES IC IC Tj = 25 °C Tj = 150 °C Tj = 175 °C 1200 V Ts = 25 °C 279 A Ts = 70 °C 213 A Ts = 25 °C 311 A Ts = 70 °C 252 A 300 A 900 A -20 ... 20 V 10 µs -40 ... 175 °C Values Unit 650 V Ts = 25 °C 221 A Ts = 70 °C 164 A Ts = 25 °C 248 A Ts = 70 °C 197 A 300 A 600 A -20 ... 20 V 10 µs -40 ... 175 °C Values Unit ICnom SKiM® 4 ICRM VGES Trench IGBT Modules SKiM301TMLI12E4B tpsc Tj • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Absolute Maximum Ratings Symbol Features ICRM = 3 x ICnom Conditions IGBT 2 VCES IC IC Tj = 25 °C Tj = 150 °C Tj = 175 °C ICnom ICRM VGES tpsc Tj ICRM = 2 x ICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V Tj = 150 °C Absolute Maximum Ratings Symbol Conditions Module It(RMS) Tterminal = 80 °C, Tstg Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C Visol AC sinus 50 Hz, t = 1 min 400 A -40 ... 125 °C 2500 V TMLI © by SEMIKRON Rev. 0 – 27.09.2013 1 SKiM301TMLI12E4B Absolute Maximum Ratings Symbol Conditions Values Unit Diode 1 VRRM IF IF Tj = 25 °C Tj = 175 °C Tj = 175 °C 1200 V Ts = 25 °C 249 A Ts = 70 °C 196 A Ts = 25 °C 249 A Ts = 70 °C 196 A 300 A IFnom SKiM® 4 Trench IGBT Modules IFRM IFRM = 3 x IFnom 900 A IFSM 10 ms, sin 180°, Tj = 150 °C 1485 A -40 ... 175 °C Values Unit Tj Absolute Maximum Ratings SKiM301TMLI12E4B Symbol Features IF VRRM • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Conditions Diode 2 IF Tj = 25 °C Tj = 175 °C Tj = 175 °C 650 V Ts = 25 °C 266 A Ts = 70 °C 205 A Ts = 25 °C 266 A Ts = 70 °C 205 A 300 A IFnom IFRM IFSM IFRM = 2xIFnom 10 ms sin 180° Tj = 25 °C Tj = 150 °C Tj 600 A 2160 A 1980 A -40 ... 175 °C Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C TMLI 2 Rev. 0 – 27.09.2013 © by SEMIKRON SKiM301TMLI12E4B Characteristics Symbol IGBT 1 VCE(sat) VCE0 SKiM® 4 Trench IGBT Modules SKiM301TMLI12E4B Features • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C Conditions IC = 300 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.80 2.05 V Tj = 150 °C 2.20 2.40 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 3.3 3.8 m 5.0 5.3 m 5.8 6.5 V rCE VGE = 15 V chiplevel VGE(th) VGE = VCE V, IC = 11.4 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG - 8 V...+ 15 V RGint Tj = 25 °C VCE = 300 V IC = 300 A RG on = 2.7 RG off = 2.7 di/dton = 5626 A/µs di/dtoff = 2636 A/µs VGE neg = -15 V VGE pos = 15 V per IGBT td(on) tr Eon td(off) tf Eoff Rth(j-s) Tj = 150 °C 5 Tj = 25 °C mA mA f = 1 MHz 18.45 nF f = 1 MHz 1.215 nF f = 1 MHz 1.035 nF 1695 nC 2.50 Tj = 150 °C 217.9 ns Tj = 150 °C 69.43 ns Tj = 150 °C 6.62 mJ Tj = 150 °C 355.5 ns Tj = 150 °C 91.3 ns Tj = 150 °C 19.37 mJ 0.19 K/W Characteristics Symbol IGBT 2 VCE(sat) VCE0 Conditions IC = 300 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.55 1.95 V Tj = 150 °C 1.75 2.2 V Tj = 25 °C 0.9 1 V Tj = 150 °C 0.82 0.9 V Tj = 25 °C 2.2 3.2 m 3.1 4.3 m 5.8 6.4 V rCE VGE = 15 V chiplevel VGE(th) VGE = VCE V, IC = 8 mA ICES VGE = 0 V VCE = 650 V Cies Coes Cres VCE = 25 V VGE = 0 V QG - 8 V...+ 15 V RGint Tj = 25 °C VCE = 300 V IC = 300 A RG on = 2.7 RG off = 2.7 di/dton = 5566 A/µs di/dtoff = 1353 A/µs VGE neg = -15 V VGE pos = 15 V per IGBT td(on) tr Eon td(off) tf Eoff Rth(j-s) Tj = 150 °C 5.1 Tj = 25 °C mA Tj = 150 °C f = 1 MHz mA 18.48 f = 1 MHz f = 1 MHz nF nF 0.548 nF nC 1.00 Tj = 150 °C 149.14 ns Tj = 150 °C 79.71 ns Tj = 150 °C 2.78 mJ Tj = 150 °C 420 ns Tj = 150 °C 180 ns Tj = 150 °C 17.48 mJ 0.3 K/W TMLI © by SEMIKRON Rev. 0 – 27.09.2013 3 SKiM301TMLI12E4B Characteristics Symbol Diode 1 VF = VEC VF0 rF SKiM® 4 IRRM Trench IGBT Modules SKiM301TMLI12E4B chiplevel chiplevel IF = 300 A Tj = 25 °C Tj = 150 °C typ. max. Unit 2.20 2.52 V 2.15 2.47 V Tj = 25 °C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 2.7 3.0 3.4 m Tj = 150 °C 3.5 4.2 4.6 m 132.43 A 21.47 µC Err 1.79 mJ 0.29 K/W Rth(j-s) VR = 300 V per DIODE Characteristics Diode 2 • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor IF = 300 A VGE = 15 V chiplevel min. Qrr Symbol Features Conditions VF = VEC VF0 rF IRRM Conditions min. Rth(j-s) max. Unit IF = 300 A Tj = 25 °C 1.4 1.80 V chiplevel Tj = 150 °C 1.39 1.77 V 1.04 1.236 V 0.85 0.99 V 1.2 1.8 m 1.8 2.6 m chiplevel chiplevel IF = 300 A Tj = 25 °C 0.95 Tj = 150 °C Tj = 25 °C Tj = 150 °C Qrr Err typ. VR = 300 V per DIODE 0.8 126.64 A 23.84 µC 1.7 mJ 0.35 K/W Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C TMLI 4 Rev. 0 – 27.09.2013 © by SEMIKRON SKiM301TMLI12E4B Characteristics Symbol Conditions min. typ. max. Unit Module LCE RCC'+EE' terminal-chip Rth(c-s) per module Ms to heat sink (M5) nH 1.35 m Ts = 125 °C 1.75 m K/W to terminals M6 Mt SKiM® 4 18 Ts = 25 °C 2 3 Nm 4 5 Nm Nm w Trench IGBT Modules Features g Characteristics Symbol SKiM301TMLI12E4B 317 Conditions min. typ. max. Unit Temperature Sensor R100 Tr = 100 °C, tolerance = 3 % B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% K • IGBT 4 Trench Gate Technology • Solder technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +150°C TMLI © by SEMIKRON Rev. 0 – 27.09.2013 5 SKiM301TMLI12E4B Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic 6 Rev. 0 – 27.09.2013 © by SEMIKRON SKiM301TMLI12E4B Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. diodes transient thermal impedance Fig. 12: Typ. IGBTs transient thermal impedance © by SEMIKRON Rev. 0 – 27.09.2013 7 SKiM301TMLI12E4B 8 Rev. 0 – 27.09.2013 © by SEMIKRON SKiM301TMLI12E4B TMLI This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 0 – 27.09.2013 9