SKiM429GD17E4HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1700 V Ts = 25 °C 595 A Ts = 70 °C 479 A 420 A ICnom ICRM VGES SKiM® 93 tpsc Trench IGBT Modules SKiM429GD17E4HD Tj ICRM = 3xICnom VCC = 1200 V VGE ≤ 15 V VCES ≤ 1700 V 1260 A -20 ... 20 V 10 µs -40 ... 175 °C Ts = 25 °C 413 A Ts = 70 °C 298 A 450 A Tj = 150 °C Inverse diode IF Tj = 150 °C IFnom Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +125°C for Inverse Diode, Top = -40 … +150°C for IGBT IFRM IFRM = 2xIFnom 900 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 3699 A -40 ... 150 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50 Hz, t = 1 min 700 A -40 ... 125 °C 3300 V Characteristics Symbol typ. max. Unit Tj = 25 °C 1.90 2.25 V Tj = 125 °C 2.1 2.3 V VGE = 15 V chiplevel Tj = 25 °C 1.1 1.2 V Tj = 125 °C 1 1.1 V rCE VGE = 15 V chip Tj = 25 °C 1.9 2.5 mΩ 2.6 2.9 mΩ VGE(th) VGE=VCE, IC = 16.8 mA 5.8 6.4 V ICES VGE = 0 V VCE = 1700 V Tj = 25 °C 0.15 0.45 mA f = 1 MHz 33.00 nF f = 1 MHz 1.38 nF IGBT VCE(sat) VCE0 Cies Coes Cres Conditions IC = 420 A VGE = 15 V chiplevel VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C td(on) tr Eon td(off) tf Eoff Rth(j-s) VCC = 1200 V IC = 420 A RG on = 3.6 Ω RG off = 3.6 Ω di/dton = 5200 A/µs di/dtoff = 2200 A/µs min. Tj = 125 °C 5.2 mA f = 1 MHz Tj = 125 °C 1.08 nF 6660 nC 2.7 Ω 390 ns Tj = 125 °C 80 ns Tj = 125 °C 245 mJ Tj = 125 °C 1005 ns Tj = 125 °C 170 ns Tj = 125 °C 180 per IGBT mJ 0.079 K/W GD © by SEMIKRON Rev. 9 – 14.01.2015 1 SKiM429GD17E4HD Characteristics Symbol Conditions Inverse diode VF = VEC IF = 420 A VGE = 0 V chiplevel VF0 chiplevel rF SKiM® 93 IRRM Trench IGBT Modules SKiM429GD17E4HD Qrr Err Rth(j-s) • IGBT 4 Trench Gate Technology • Solderless sinter technology • VCE(sat) with positive temperature coefficient • Low inductance case • Isolated by Al2O3 DCB (Direct Copper Bonded) ceramic substrate • Pressure contact technology for thermal contacts • Spring contact system to attach driver PCB to the control terminals • High short circuit capability, self limiting to 6 x IC • Integrated temperature sensor typ. max. Unit Tj = 25 °C 1.7 1.9 V Tj = 125 °C 1.6 1.8 V Tj = 25 °C 1.1 1.3 V Tj = 125 °C 0.9 1.1 V Tj = 25 °C 1.3 1.3 mΩ 1.8 1.8 mΩ Tj = 125 °C IF = 420 A Tj = 125 °C di/dtoff = 5990 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 1200 V per diode 500 A 140 µC 99 mJ 0.169 K/W Module LCE RCC'+EE' Features chiplevel min. terminal-chip 10 nH Ts = 25 °C 0.3 mΩ Ts = 125 °C 0.5 mΩ 1042 g w Temperature Sensor R100 TSensor = 100 °C (R25 = 5 kΩ) 339 Ω B100/125 R(T) = R100exp[B100/125(1/T-1/373)]; T[K]; 4096 K Typical Applications* • Automotive inverter • High reliability AC inverter wind • High reliability AC inverter drives Remarks • Case temperature limited to Ts = 125°C max; Tc = Ts (for baseplateless modules) • Recommended Top = -40 … +125°C for Inverse Diode, Top = -40 … +150°C for IGBT GD 2 Rev. 9 – 14.01.2015 © by SEMIKRON SKiM429GD17E4HD Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 9 – 14.01.2015 3 SKiM429GD17E4HD Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 9 – 14.01.2015 © by SEMIKRON SKiM429GD17E4HD SKIM 93 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 9 – 14.01.2015 5