ROHM RFU02VS8S

Data Sheet
Super Fast Recovery Diode
RFU02VS8S
Dimensions (Unit : mm)
Series
Ultra Fast Recovery
Land size figure (Unit : mm)
1.1
0.17±0.1
0.05
0.8
1.3±0.05
1.9±0.1
2.5±0.2
2.3
Applications
High frequency rectification
TUMD2S
Features
1)Small mold type.(TUMD2S)
2)high switching speed
Structure
0.8±0.05
0.6±0.2
ROHM : TUMD2S
0.1
dot (year week factory) + day
Construction
Silicon epitaxial planer
Taping dimensions (Unit : mm)
φ1.55±0.1
0
0.25±0.05
8.0±0.2
2.75
1.43±0.05
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Repetitive peak Reverse voltage
VR
Reverse voltage
Average rectified forward current
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Electrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
IR
Reverse current
4.0±0.1
2.8±0.05
1.75±0.1
2.0±0.05
3.5±0.05
4.0±0.1
φ1.0±0.2
0
Conditions
D≤0.5
Direct voltage
Glass epoxy substrate mounted
R-road, 60Hz half sin wave
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
0.9±0.08
Limits
800
800
Unit
V
V
0.2
A
1
A
150
55 to 150
C
C
Conditions
IF=0.2A
VR=800V
Min.
－
－
Typ.
2.2
0.01
Max.
3.0
10
Unit
V
μA
Reverse recovery time
trr
IF=0.1A,IR=0.1A,Irr=0.1×I R
－
20
35
ns
Reverse recovery time
trr
－
13
25
ns
Thermal capacitance
Ct
IF=0.1A,IR=0.2A,Irr=0.1×I R
VR=0V,f=1MHz
－
4
－
pF
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.10 - Rev.A
Data Sheet
RFU02VS8S
10000
1
Tj=150°C
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
Tj=150°C
Tj=125°C
0.1
Tj=25°C
0.01
Tj=75°C
1000
100
Tj=75°C
10
Tj=25°C
1
0.001
0
1
2
3
0
4
200
400
600
800
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(V)
VF-IF CHARACTERISTICS
2600
10
f=1MHz
Tj=25°C
IF=0.2A
n=20pcs
2500
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Tj=125°C
1
2400
2300
2200
2100
2000
AVE:2139mV
1900
0.1
1800
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
10
Tj=25°C
VR=800V
n=20pcs
100
10
Tj=25°C
f=1MHz
VR=0V
n=10pcs
9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
1000
AVE:26.8nA
8
7
6
5
4
3
2
AVE:3.98pF
1
1
0
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ct DISPERSION MAP
2/4
2011.10 - Rev.A
10
40
9
8
8.3ms
7
6
5
4
3
2
Tj=25°C
IF=0.1A
IR=0.1A
Irr=0.1*IR
n=10pcs
35
1cyc
IFSM
REVERSE RECOVERY TIME:trr(ns)
ITS ABILITY OF PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
RFU02VS8S
AVE:3.7A
30
25
20
15
AVE:20.6ns
10
5
1
0
0
IFSM DISPERSION MAP
trr DISPERSION MAP
100
100
IFSM
8.3ms
10
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms
1cyc
1
t
10
1
0.1
0.1
1
10
1
100
10
1000
5
Rth(j-a)
On glass-epoxy substrate
soldering land 6mm□
4
3.5
AVE:1.17kV
AVE:2.22kV
3
2.5
2
1.5
1
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
4.5
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
Rth(j-l)
10
0.5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
1
0.001
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
0.01
3/4
2011.10 - Rev.A
0.4
1
D.C.
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.6
D=t/T
VR=640V
Tj=150°C
On glass-epoxy
substrate soldering land 6mm□
D.C.
D=0.5
0.4
VR
t
0.35
half sin wave
Io
0A
0V
D=0.8
0.8
FORWARD POWER
DISSIPATION:Pf(W)
Data Sheet
RFU02VS8S
T
0.3
D=0.8
D=0.5
0.25
0.2
half sin wave
0.15
0.1
0.2
0.05
0
0
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0
0.4
0.35
0A
Io
0V
VR
t
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
D.C.
0.3
D=0.8
0.25
30
60
90
120
150
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
T
D=t/T
VR=640V
Tj=150°C
D=0.5
0.2
half sin wave
0.15
0.1
0.05
0
0
30
60
90
120
150
CASE TEMPERATURE:Tl(°C)
DERATING CURVE (Io-Tl)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.10 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A