1N4148 SILICON SWITCHING DIODE High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. Metallurgically bonded, hermetically sealed, double plug construction MAXIMUM RATINGS Operating temperature -65° to 200°C Storage temperature -65° to 200°C Surge current A, sine 8.3mS 2.0A Surge current B, square 8.3mS 1.41A Total power dissipation 500mW Operating current 200mA, TA = 25°C Derating factor 1.14mA/°C above TA = 25°C D.C. reverse voltage (VRWM) 75V DC ELECTRICAL CHARACTERISTICS Characteristics TA = Forward voltage @ IF = 10mA 25°C Symbol Minimum Maximum Unit - 0.8 Volts - 1.2 Volts - 0.8 Volts Forward voltage @ IF = 100mA 25°C Forward voltage @ IF = 10mA 150°C Forward voltage @ IF = 100mA -55°C - 1.3 Volts Reverse leakage current @ 20Vdc 25°C - 0.025 µA Reverse leakage current @ 75Vdc 25°C - 0.500 µA Reverse leakage current @ 20Vdc 150°C - 35.0 µA Reverse leakage current @ 75Vdc 150°C - 75.0 µA Breakdown voltage @ IR = 100µA 25°C 100 - Volts VF IR VBR AC ELECTRICAL CHARACTERISTICS Symbol Maximum Capacitance @ 0V pF 4 Capacitance @ 1.5V pF 2.8 Trr @ IF = IR = 10mA, IREC = 1mA nsec 5 TFR = IF = 50mA nsec 20 VFR @ IF = 50mA V(pk) 5 Rev. 20110322 High-reliability discrete products and engineering services since 1977 1N4148 SILICON SWITCHING DIODE MECHANICAL CHARACTERISTICS Case: DO-35 Glass Marking: Body painted, alpha-numeric Polarity: Cathode band Rev. 20110322