HAT2226R Silicon N Channel MOS FET High Speed Power Switching REJ03G1466-0100 Rev.1.00 Jul 18, 2006 Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8<FP-8DAV>) 8 5 6 7 8 D D D D 5 76 12 34 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Drain to source voltage VDSS 600 Gate to source voltage VGSS ±30 Drain current ID 0.1 Note1 Drain peak current ID (pulse) 0.4 Body-drain diode reverse drain current IDR 0.1 Note1 Body-drain diode reverse drain peak current IDR (pulse) 0.4 Channel dissipation Pch Note2 1.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s Rev.1.00 Jul 18, 2006 page 1 of 3 Unit V V A A A A W °C °C HAT2226R Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 3. Pulse test Rev.1.00 Jul 18, 2006 page 2 of 3 Symbol V(BR)DSS IDSS IGSS VGS(off) RDS(on) Min 600 — — 3.0 — Typ — — — — 35 Max — 1 ±0.1 5.0 52 Unit V µA µA V Ω Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF — — — — — — — — — — — 25 4 0.4 34 16 57 320 3.1 0.5 2.3 0.79 — — — — — — — — — — 1.35 pF pF pF ns ns ns ns nC nC nC V trr — 175 — ns Test conditions ID = 10 mA, VGS = 0 VDS = 600 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 mA ID = 50 mA, VGS = 10 V Note3 VDS = 25 V VGS = 0 f = 1 MHz ID = 50 mA VGS = 10 V RL = 6000 Ω Rg = 10 Ω VDD = 480 V VGS = 10 V ID = 100 mA IF = 100 mA, VGS = 0 Note3 IF = 100 mA, VGS = 0 diF/dt = 100 A/µs HAT2226R Package Dimensions JEITA Package Code P-SOP8-3.95 × 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g F Package Name SOP-8 *1 D bp 1 c *2 E Index mark HE 5 8 4 Z Terminal cross section (Ni/Pd/Au plating) * 3 bp x M e NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. Reference Dimension in Millimeters Symbol Min A1 A L1 L y Detail F D E A2 A1 A bp b1 c c1 HE e x y Z L L1 Nom Max 4.90 5.3 3.95 0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25 0° 8° 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08 Ordering Information Part Name HAT2226R-EL-E Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.1.00 Jul 18, 2006 page 3 of 3 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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