RENESAS HSC276A

HSC276A
Silicon Schottky Barrier Diode for Mixer
REJ03G0600-0100
(Previous: ADE-208-836)
Rev.1.00
Apr 13, 2005
Features
• High forward current, Low capacitance.
• Ultra small Flat Lead Package (UFP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Name
HSC276A
S5
UFP
Pin Arrangement
Cathode mark
Mark
1
S5
2
1. Cathode
2. Anode
Rev.1.00 Apr 13, 2005 page 1 of 4
Package Code
(Previous Code)
PWSF0002ZA-A
(UFP)
HSC276A
Absolute Maximum Ratings
(Ta = 25°C)
Item
Repetitive peak reverse voltage
Symbol
VRRM
Reverse voltage
Average rectified current
VR
IO
Junction temperature
Storage temperature
Tj
Tstg
Value
5
Unit
V
3
30
V
mA
125
−55 to +125
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Reverse voltage
Symbol
VR
Min
3.0
Typ
—
Max
—
Unit
V
IR = 1 mA
Reverse current
Forward current
Capacitance
ESD-Capability *
IR
IF
—
35
—
—
50
—
µA
mA
VR = 0.5 V
VF = 0.5V
C
—
—
30
—
—
0.85
—
pF
V
VR = 0.5 V, f = 1 MHz
C = 200 pF, R = 0 Ω , Both forward and
reverse direction 1 pulse.
Note: Failure criterion ; IR ≥ 100 µA at VR = 0.5 V
Rev.1.00 Apr 13, 2005 page 2 of 4
Test Condition
HSC276A
10-1
10-2
10-2
10-3
10-3
10
Ta= 75°C
Ta= 25°C
-4
10-5
Reverse current IR (A)
Forward current IF (A)
Main Characteristic
0
0.2
0.4
10-4
Ta= 25°C
10
0.6
0.8
1.0
-5
10-60
1.0
2.0
3.0
4.0
5.0
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Fig.2 Reverse current vs. Reverse voltage
f=1MHz
10
Capacitance C (pF)
Ta= 75°C
1.0
0.1
0.1
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance vs. Reverse voltage
Rev.1.00 Apr 13, 2005 page 3 of 4
HSC276A
Package Dimensions
JEITA Package Code
SC-79
RENESAS Code
Previous Code
PWSF0002ZA-A
UFP / UFPV
MASS[Typ.]
0.0016g
D
b
E
HE
c
l1
e1
A
l1
b2
Pattern of terminal position areas
Reference
Symbol
A
b
c
D
E
HE
b2
e1
l1
Rev.1.00 Apr 13, 2005 page 4 of 4
Dimension in Millimeters
Min
0.50
0.25
0.08
0.70
1.10
1.50
Nom
0.60
0.30
0.80
1.20
1.60
0.80
1.70
0.60
Max
0.70
0.35
0.18
0.90
1.30
1.70
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