BAT85 Small-Signal Diode Schottky Diode Features For general purpose applications. This diode features low turn-on voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges This diode is also available in the MiniMELF case with type designation BAS85. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics (Ratings at 25oC ambient temperature unless otherwise specified.) Parameter Symbol Value Unit Volts Continuous reverse voltage VR 30 Forward continuous current at Tamb=25oC IF 200 (1) mA Peak forward current at Tamb=25oC IFM 300 (1) mA 600 (1) mA o Surge forward current at tp<1s, Tamb=25 C IFSM o Power dissipation at Tamb=65 C Ptot 200 (1) Thermal resistance junction to ambient air RθJA 0.43 (1) mW o C/W Maximum junction temperature Tj 125 o C Ambient operating temperature range TA -65 to +125 o C -65 to +150 o C Storage temperature range TS Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter Reverse breakdown voltage Leakage current Symbol Test Condition Min. Typ. Max. Unit V(BR)R IR=10uA (pulsed) 30 - - Volts IR VR=25V - - 2 uA Forward voltage pulse test tp<300us, δ<2% VF IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA - 0.5 - 0.24 0.32 0.4 0.8 Volt Capacitance Ctot VR=1V, f=1MHz - - 10 pF trr IF=10mA, IR=10mA, to IR=1mA - - 5 ns Reverse recovery time Notes: 1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. 675 RATINGS AND CHARACTERISTIC CURVES 676