Power Transistor (120V, 2A) 2SD1857 Dimensions (Unit : mm) 2SD1857 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236. (1) (2) (3) 2.54 2.54 ROHM : ATV 1.05 0.45 (1) Emitter (2) Collector (3) Base Taping specifications Packaging specifications and hFE Package Type hFE 2SD1857 Taping Code TV2 Basic ordering unit (pieces) 2500 QR hFE values are classified as follows: Item hFE Q 120 to 270 R 180 to 390 Absolute maximum ratings (Ta = 25C) Symbol Limits Unit Collector-base voltage Collector-emitter voltage VCBO VCEO Emitter-base voltage VEBO IC 120 120 5 2 V V V A Parameter Collector current Collector power dissipation Junction temperature Storage temperature ∗1 ∗2 ICP ∗1 3 A PC ∗2 1 W 150 −55 to +150 °C °C Tj Tstg Single pulse Pw = 10ms When mounted on 1.7mm thick PCB having collector foll dimensions 1cm2 or more. Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Symbol Min. Typ. Max. Unit BVCBO BVCEO 120 120 5 − − − − − − − − 1 V V V μA IC = 50μA IC = 1mA − − − − 1 2 μA V VEB = 4V 120 − − − 80 20 390 − − − MHz pF BVEBO ICBO IEBO VCE(sat) Output capacitance hFE fT Cob ∗ Measured using pulse current. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 Conditions IE = 50μA VCB = 100V ∗ IC/IB = 1A/0.1A VCE/IC = 5V/0.1A VCE = 5V , IE = −0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz ∗ 2009.12 - Rev.E Data Sheet 2SD1857 Electrical characteristics curves 1000 10 10mA 9mA 8mA 7mA 6mA 0.4 3mA 2mA 0.2 1mA DC CURRENT GAIN : hFE 5mA 4mA 1 0.5 0.2 0.1 −25°C 0.6 0.05 0.02 IB=0mA 2 3 4 0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) DC CURRENT GAIN : hFE 200 Ta=100°C 100 50 25°C −25°C 20 10 5 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 0.2 0.4 0.6 10 1 0.01 0.02 1.8 Ta=25°C 5 2 1 0.5 0.2 IC/IB=5V 0.1 0.05 10 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 −500 −1000 EMITTER CURRENT : IE (mA) Fig.7 Gain bandwidth product vs. emitter current 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.8 Collector output capacitance vs. collector-base voltage 2/2 5 10 10 IC/IB=10 5 2 Ta= −25°C 1 0.5 0.2 100°C 25°C VBE(sat) Ta=100°C 0.1 0.05 −25°C 25°C VCE(sat) 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) Ta=25°C f=1MHz IE=0A 500 2 Fig.3 DC current gain vs. collector current ( ) Fig.6 Collector-emitter saturation Base-emitter saturation vs. collector current 10 1000 1 5 Ta=25°C ∗Single nonrepetitive pulse IC Max(PULSE∗) 2 1 0.5 DC 0.2 s∗ 2 0.5 s∗ 5 0.05 0.1 0.2 COLLECTOR CURRENT : IC (A) 0m 10 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1.4 1.6 =1 20 −50 −100 −200 5 0m 50 −5 −10 −20 10 Pw 100 −1 −2 1.2 Fig.5 Collector-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : Cob (pF) ) 200 1 5V 20 COLLECTOR CURRENT : IC (A) Ta=25°C VCE=5V 500 50 10 TRANSITION FREQUENCY : fT (MHz) 1000 1.0 10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( 0.8 Fig.2 Ground emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=5V 500 VCE=10V 100 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Ground emitter output characteristics 1000 200 2 0.01 5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VBE(sat) (V) 1 0 COLLECTOR CURRENT : IC (A) 0 Ta=25°C 500 2 0°C 25°C 0.8 VCE=5V 5 Ta=10 Ta=25°C COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 1.0 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.9 Safe operating area 2009.12 - Rev.E Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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