TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SP1004 Series SP1004 Series 5pF 8kV Bidirectional TVS Array RoHS Pb GREEN Description Back-to-back zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at the maximum level specified in the IEC 61000-42 international standard (Level 4, ±8kV contact discharge) without performance degradation. Their very low loading capacitance also makes them ideal for protecting highspeed signal pins. Pinout Features I/O 1 I/O 5 I/O 2 I/O 3 I/O 4 SOT953 Notes: Any of the 5 I/O pins can be tied to GND to provide 4 channels of bidirectional protection 1 Functional Block Diagram 5 4 • ESD, IEC61000-4-2, ±8kV contact, ±15kV air • Low capacitance of 5pF (TYP) per I/O • Capable of withstanding >1,000 ±8kV ESD strikes • Low leakage current of 1µA (MAX) at 5V • Lightning, IEC61000-4-5, 2A (tp=8/20µs) • Small SOT953 package Applications • MP3-PMPs • Digital cameras • DVD players • Set top boxes • Desktops • Notebooks • Mobile phones Application Example 1 2 3 Additional Information Datasheet Resources Samples Back panel (STB, TV) RCA jacks Audio codec Left - In Right - In Left - Out Right - Out SP1004-04VTG (SOT953) Shield Ground Signal Ground Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. © 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/20/13 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SP1004 Series Absolute Maximum Ratings Symbol Parameter Value Units 2.0 A Operating Temperature –40 to 125 °C Storage Temperature –55 to 150 °C IPP Peak Pulse Current (tp=8/20μs) TOP TSTOR CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Storage Temperature Range Rating Units –55 to 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions Min VR IR=1mA 6.0 VRWM IR≤1µA 6.0 V ILEAK VR=5V 0.1 µA Reverse Voltage Drop1 Reverse Standoff Voltage 1 Reverse Leakage Current1 Clamp Voltage2 VC Dynamic Resistance RDYN ESD Withstand Voltage1,2 VESD Diode Capacitance1,2 Typ Max Units 9.5 V IPP=1A, tp=8/20µs 10 IPP=2A, tp=8/20µs 12 V V (VC2 - VC1) / (IPP2 - IPP1) 2.0 Ω IEC61000-4-2 (Contact Discharge)3 ±8 kV IEC61000-4-2 (Air Discharge) ±15 kV CD Reverse Bias=0V 6 7 pF Reverse Bias=1.5V 5 6 pF Note: 1 Parameter specified with pin 2 grounded externally. 2 Parameter is guaranteed by design and/or device characterization. 3 Capable of withstanding >1,000 pulses at 1s intervals. Insertion Loss (S21) 7.0 5 6.0 0 5.0 -5 Attenuation (dB) Capacitance (pF) Capacitance vs. Reverse Bias 4.0 3.0 2.0 -10 -15 -20 -25 1.0 -30 0.0 0.0 0.5 1.0 1.5 2.0 2.5 DC Bias (V) © 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/20/13 3.0 3.5 4.0 4.5 5.0 10 100 1000 Frequency (MHz) 10000 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SP1004 Series Soldering Parameters Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Critical Zone TL to TP Ramp-up TL TS(max) tL Ramp-do Ramp-down Preheat TS(min) 25 Peak Temperature (TP) tP TP Temperature Reflow Condition tS time to peak temperature Time Package Dimensions — SOT953 D SOT953 e Symbol E E1 A Min Max Min Max 0.5 0.170 0.020 B 0.10 0.20 0.004 0.008 c 0.05 0.15 0.002 0.006 D 0.95 1.05 0.037 0.041 E 0.95 1.05 0.037 0.041 E1 0.75 0.85 0.029 0.033 e C Inches 0.44 A B Millimeters L 0.35 BSC 0.05 0.15 0.014 BSC 0.002 0.006 L © 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/20/13 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SP1004 Series Product Characteristics Part Numbering System SP 1004 – 04 V T G TVS Diode Arrays (SPA® Diodes) G= Green T= Tape & Reel Series Package V: SOT953 Number of Channels Lead Plating Pre-Plated Frame Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substitute Material Silicon Body Material Molded Epoxy Flammability UL 94 V-0 Notes : Part Marking System 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. N2 Ordering Information Part Number Package Marking Min. Order Qty. SP1004-04VTG SOT953 N2 8000 Embossed Carrier Tape & Reel Specification – SOT953 PO t E P2 o/ D Symbol Millimetres Min 1.65 1.85 0.065 0.073 3.45 3.55 0.136 0.140 D1 0.45 0.55 0.018 0.022 W P0 BO F AO 1.50 min KO 3.90 0.059 min 4.10 40.0 ± 0.20 0.154 0.161 1.575 ± 0.008 P 1.95 2.05 0.077 0.081 P2 1.95 2.05 0.077 0.081 W 7.90 8.20 0.311 0.323 A0 1.11 1.21 0.044 0.048 B0 1.11 1.21 0.044 0.048 K0 0.58 0.68 0.023 0.027 t © 2013 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 12/20/13 Max F 10P0 P Min E D oD1 / Inches Max 0.22 max 0.009 max