TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SPHV-C Series SPHV-C Series 200W Discrete Bidirectional TVS Diode RoHS Pb GREEN Description The SPHV-C series is designed to replace multilayer varistors (MLVs) in portable applications, LED lighting modules, and low speed I/Os. It will protect sensitive equipment from damage due to electrostatic discharge (ESD) and other overvoltage transients. The SPHV-C series can safely absorb repetitive ESD strikes above the maximum level of the IEC61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation and safely dissipate up to 8A (SPHV12-C) of induced surge current (IEC61000-4-5, tP=8/20μs) with very low clamping voltages. Features Pinout • ESD, IEC61000-4-2, ±30kV contact, ±30kV air • EFT, IEC61000-4-4, 40A 1 (5/50ns) • Lightning, IEC61000-4-5, 8A (tP=8/20μs, SPHV12-C) • Low clamping voltage 2 • AEC-Q101 qualified • Side exposed leadframe helps to verify solderability (SPHVxxKTG-C series) • Low leakage current Applications Functional Block Diagram 1 • Small SOD882 packaging helps save board space 2 Life Support Note: • LED Lighting Modules • Mobile & Handhelds • Portable Instrumentation • RS232 / RS485 • General Purpose I/O • CAN and LIN Bus Additional Information Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. Datasheet © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/15 Resources Samples TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SPHV-C Series Absolute Maximum Ratings Symbol Parameter Value Units 200 W Operating Temperature -40 to 125 °C Storage Temperature -55 to 150 °C Ppk Peak Pulse Power (tp=8/20μs) TOP TSTOR Notes: CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Storage Temperature Range Rating Units -55 to 150 °C Maximum Junction Temperature 150 °C Maximum Lead Temperature (Soldering 20-40s) 260 °C SPHV12-C Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions VRWM IR≤1μA Reverse Breakdown Voltage VBR IR=1mA Leakage Current ILEAK Reverse Standoff Voltage Clamp Voltage1 VC Dynamic Resistance 2 Peak Pulse Current ESD Withstand Voltage1 Diode Capacitance1 Max Units 12.0 V VR=12V 1.0 μA IPP=1A, tp=8/20µs, Fwd 19.0 V IPP=8A, tP=8/20μs, Fwd 25.0 V RDYN TLP, tp=100ns, I/O to GND Ipp tp=8/20µs VESD CD-GND Min Typ 13.3 V 0.48 Ω 8.0 IEC61000-4-2 (Contact Discharge) ±30 IEC61000-4-2 (Air Discharge) ±30 A kV kV Reverse Bias=0V, f=1MHz 30 pF Note: 1 2 Parameter is guaranteed by design and/or device characterization. Transmission Line Pulse (TLP) with 100ns width and 200ps rise time. SPHV15-C Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions VRWM IR≤1μA Reverse Breakdown Voltage VBR IR=1mA Leakage Current ILEAK Reverse Standoff Voltage VC Clamp Voltage1 Dynamic Resistance2 Peak Pulse Current ESD Withstand Voltage1 Diode Capacitance 1 Max Units 15.0 V VR=15V 1.0 μA IPP=1A, tp=8/20µs, Fwd 22.0 V TLP, tp=100ns, I/O to GND Ipp tp=8/20µs CI/O-GND Typ 16.7 V IPP=5A, tp=8/20µs, Fwd RDYN VESD Min 30.0 0.43 V Ω 5.0 A IEC61000-4-2 (Contact Discharge) ±30 kV IEC61000-4-2 (Air Discharge) ±30 kV Reverse Bias=0V, f=1MHz 24 pF Note: 1 2 Parameter is guaranteed by design and/or device characterization. Transmission Line Pulse (TLP) with 100ns width and 200ps rise time. © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/15 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SPHV-C Series SPHV24-C Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions VRWM IR≤1μA Reverse Breakdown Voltage VBR IR=1mA Leakage Current ILEAK Reverse Standoff Voltage VC Clamp Voltage1 Dynamic Resistance 2 Diode Capacitance Units 24.0 V VR=24V 1.0 μA IPP=1A, tp=8/20µs, Fwd 36.0 V IPP=3A, tp=8/20µs, Fwd 50.0 V TLP, tp=100ns, I/O to GND tp=8/20µs VESD Typ 26.7 Ipp V 0.65 Ω 3.0 A IEC61000-4-2 (Contact Discharge) ±24 kV IEC61000-4-2 (Air Discharge) ±30 kV CI/O-GND 1 Max RDYN Peak Pulse Current ESD Withstand Voltage1 Min Reverse Bias=0V, f=1MHz 17 pF Max Units Note: 1 2 Parameter is guaranteed by design and/or device characterization. Transmission Line Pulse (TLP) with 100ns width and 200ps rise time. SPHV36-C Electrical Characteristics (TOP=25ºC) Parameter Symbol Test Conditions VRWM IR≤1μA Reverse Breakdown Voltage VBR IR=1mA Leakage Current ILEAK Reverse Standoff Voltage VC Clamp Voltage1 Dynamic Resistance 2 Diode Capacitance1 V 40.0 V VR=36V 1.0 μA IPP=1A, tp=8/20µs, Fwd 52.0 V IPP=2A, tp=8/20µs, Fwd 65.0 V TLP, tp=100ns, I/O to GND Ipp tp=8/20µs VESD Typ 36.0 RDYN Peak Pulse Current ESD Withstand Voltage1 Min 1.33 Ω 2.0 A IEC61000-4-2 (Contact Discharge) ±15 kV IEC61000-4-2 (Air Discharge) ±20 kV CI/O-GND Reverse Bias=0V, f=1MHz 13 pF Note: 1 2 Parameter is guaranteed by design and/or device characterization. Transmission Line Pulse (TLP) with 100ns width and 200ps rise time. Non-Repetitive Peak Pulse Power vs. Pulse Time Power Derating Curve 110 100 90 % of Rated Power I PP Peak Pulse Power - Ppk (kW) 10 1 0.1 80 70 60 50 40 30 20 10 0 0.01 0.1 1 10 100 Pulse Duration - t p (µs) © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/15 1000 0 25 50 75 100 Ambient Temperature - T A (oC) 125 150 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SPHV-C Series Pulse Waveform SPHV12-C Transmission Line Pulsing(TLP) Plot 20 100% 18 90% 16 80% 14 TLP Current (A) Percent of IPP 110% 70% 60% 50% 12 10 8 40% 6 30% 4 20% 2 10% 0% 0.0 5.0 10.0 15.0 20.0 25.0 0 30.0 0 5 10 Time (μs) SPHV15-C Transmission Line Pulsing(TLP) Plot 20 25 30 SPHV24-C Transmission Line Pulsing(TLP) Plot 20 20 18 18 16 16 14 14 TLP Current (A) TLP Current (A) 15 TLP Voltage (V) 12 10 8 12 10 8 6 6 4 4 2 2 0 0 0 5 10 15 20 25 30 0 35 5 10 15 20 25 30 35 40 45 50 55 TLP Voltage (V) TLP Voltage (V) SPHV36-C Transmission Line Pulsing(TLP) Plot 16 14 TLP Current (A) 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 TLP Voltage (V) © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/15 TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SPHV-C Series Soldering Parameters Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus) Temp (TL) to peak 3°C/second max TS(max) to TL - Ramp-up Rate 3°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds Ramp-down Rate 6°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 260°C Product Characteristics tP TP Temperature Reflow Condition Critical Zone TL to TP Ramp-up TL TS(max) tL Ramp-do Ramp-down Preheat TS(min) tS 25 time to peak temperature Time Ordering Information Part Number Lead Plating Pre-Plated Frame Lead Material Copper Alloy Lead Coplanarity 0.0004 inches (0.102mm) Substitute Material Silicon Body Material Molded Epoxy SPHV24-01ETG-C Flammability UL 94 V-0 SPHV36-01ETG-C Package SPHV12-01ETG-C Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form. 5. Package surface matte finish VDI 11-13. SPHV15-01ETG-C SPHV12-01KTG-C Part Marking System Min. Order Qty. B2 SOD882 B5 10000 B4 B6 SPHV15-01KTG-C SOD882 with side SPHV24-01KTG-C exposed leadframe SPHV36-01KTG-C Marking B2 B5 10000 B4 B6 Part Numbering System SPHV** – 01 x T G – C 1 B* 2 2: SPHV12-C 5: SPHV15-C 4: SPHV24-C 6: SPHV36-C © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/15 TVS Diode Arrays (SPA® Diodes ) Voltage Number of Channels Package E: SOD882 K: SOD882 with side exposed leadframe Bidirectional G= Green T= Tape & Reel TVS Diode Arrays (SPA® Diodes) General Purpose ESD Protection - SPHV-C Series Package Dimensions — SOD882(SPHVxx-01ETG-C) Symbol Package SOD882 JEDEC MO-236 Millimeters 0.325 0.325 Inches Min Typ Max Min Typ Max A 0.90 1.00 1.10 0.037 0.039 0.041 0.650 B 0.50 0.60 0.70 0.022 0.024 0.026 0.975 C 0.40 0.50 0.60 0.016 0.020 0.024 0.650 0.45 D Recommended Soldering Pad Layout *Some ETG packaging will look like KTG packaging due to the differing package construction between various suppliers. 0.018 E 0.20 0.25 0.35 0.008 0.010 0.012 F 0.45 0.50 0.55 0.018 0.020 0.022 Package Dimensions — SOD882 with side exposed leadframe(SPHVxx-01KTG-C) A 0.14 Symbol B 0.075 0.28 Top View Side Exposed Leadframe C D 1.40 0.975 0.30 0.325 E a F 0.650 0.60 G b 0.325 0.55 Bottom View Recommended Soldering Pad Layout d H c I Side View Package SOD882 with side exposed leadframe JEDEC MO-236 Millimeters Inches Min Typ Max Min Typ Max A 0.90 1.00 1.10 0.037 0.039 0.043 B 0.50 0.60 0.70 0.020 0.024 0.028 C 0.90 1.00 1.10 0.037 0.039 0.043 D 0.55 0.65 0.75 0.022 0.026 0.030 E 0.40 0.50 0.60 0.016 0.020 0.024 F 0.50 0.60 0.70 0.020 0.024 0.028 G 0.20 0.25 0.30 0.008 0.010 0.012 H 0.40 0.50 0.60 0.016 0.020 0.024 0.05 max I 0.002 max a - 0.14 - - 0.006 - b - 0.04 - - 0.002 - c - 0.075 - - 0.003 - d - 0.10 - - 0.004 - Embossed Carrier Tape & Reel Specification Symbol Millimeters A 0.70+/-0.045 B 1.10+/-0.045 C 0.65+/-0.045 d 1.55+/-0.10 E 1.75+/-0.05 F 3.50+/-0.05 P 2.00+/-0.10 P0 4.00+/-0.10 P1 2.00+/-0.10 W 8.00 + 0.30 -0.10 Top mark and pin 1 direction in Tape and Reel Feeding Direction 1 BX 2 © 2015 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 09/09/15