Datasheet

TVS Diode Arrays (SPA® Diodes)
Low Capacitance ESD Protection - SP7538P Series
SP7538P Series 0.5pF 12KV Diode Array
RoHS
Pb GREEN
Description
The SP7538P integrates 8 channels of ultra low capacitance
rail-to-rail diodes and an additional zener diode to provide
protection for electronic equipment that may experience
destructive electrostatic discharges (ESD). This robust
device can safely absorb repetitive ESD strikes above the
maximum level specified in the IEC61000-4-2 international
standard (±8kV contact discharge) without performance
degradation. The extremely low loading capacitance also
makes it ideal for protecting high speed signal pins such as
V-By-One, HDMI, USB3.0, USB2.0, and IEEE 1394.
Pinout
Features
1
2
9
3
8
4
5
7
6
Functional Block Diagram
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
Revision: 03/17/16
• Low capacitance of 0.5pF
• EFT, IEC61000-4-4, 40A
(tP=5/50ns)
• Low leakage current of
1.5μA (MAX) at 5V
• Lightning, IEC610004-5 2nd edition, 4A
(tP=8/20μs)
• Halogen free, Lead free
and RoHS compliant
(TYP) per I/O
Applications
©2016 Littelfuse, Inc.
Specifications are subject to change without notice.
• ESD, IEC61000-4-2,
±12kV contact, ±25kV air
• V-By-One
• Flat Panel Displays
• Embedded DisplayPort
• LCD/LED TVs
• USB 2.0/3.0 Ports
• Smartphones
• HDMI
• Mobile Computing
TVS Diode Arrays (SPA® Diodes)
Low Capacitance ESD Protection - SP7538P Series
Absolute Maximum Ratings
Symbol
Parameter
IPP
Peak Current (tp=8/20μs)
TOP
TSTOR
Value
Units
4.0
A
Operating Temperature
-40 to 150
°C
Storage Temperature
-55 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Characteristics (TOP=25ºC)
Symbol
Test Conditions
Reverse Standoff Voltage
Parameter
VRWM
IR ≤ 1µA
5.0
V
Reverse Leakage Current
ILEAK
VR=5V, Any I/O to GND
1.5
µA
Clamp Voltage1
VC
Dynamic Resistance
RDYN
2
ESD Withstand Voltage1
Min
Typ
Units
IPP=1A, tp=8/20µs, Fwd
6.6
V
IPP=2A, tp=8/20µs, Fwd
7.0
V
TLP, tP=100ns, I/O to GND
VESD
Max
0.3
IEC61000-4-2 (Contact)
±12
IEC61000-4-2 (Air)
±25
Ω
kV
kV
Diode Capacitance1
CI/O-GND
Reverse Bias=0V, f=1 MHz
0.5
pF
Diode Capacitance1
CI/O-/O
Reverse Bias=0V, f=1 MHz
0.3
pF
Note: Parameter is guaranteed by design and/or device characterization.
1
2
Transmission Line Pulse (TLP) with 100ns width and 2ns rise time.
8/20μS Pulse Waveform
Capacitance vs. Reverse Bias
110%
1
100%
0.9
90%
Capacitance (pF)
Percent of IPP
80%
70%
60%
50%
40%
30%
20%
0.8
0.7
0.6
0.5
0.4
0.3
0.2
10%
0.1
0%
0.0
5.0
10.0
15.0
20.0
25.0
30.0
Time (μs)
Clamping Voltage vs IPP
0
8.0
1.5 2 2.5 3 3.5
Bias Voltage (V)
4
15
TLP Current (A)
Clamp Voltage (VC)
1
20
6.0
4.0
10
5
2.0
1.0
2.0
3.0
Peak Pulse Current-IPP (A)
©2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 03/17/16
0.5
Transmission Line Pulsing(TLP) Plot
10.0
0.0
0
4.0
0
0
3
6
9
TLP Voltage (V)
12
15
4.5
5
TVS Diode Arrays (SPA® Diodes)
Low Capacitance ESD Protection - SP7538P Series
Soldering Parameters
Pre Heat
Pb – Free assembly
- Temperature Min (Ts(min))
150°C
- Temperature Max (Ts(max))
200°C
- Time (min to max) (ts)
60 – 180 secs
Average ramp up rate (Liquidus) Temp (TL)
to peak
3°C/second max
TS(max) to TL - Ramp-up Rate
3°C/second max
Reflow
- Temperature (TL) (Liquidus)
217°C
- Temperature (tL)
60 – 150 seconds
260+0/-5 °C
Time within 5°C of actual peak
Temperature (tp)
20 – 40 seconds
Ramp-down Rate
6°C/second max
Time 25°C to peak Temperature (TP)
8 minutes Max.
Do not exceed
260°C
tL
Ramp-do
Ramp-down
Preheat
TS(min)
tS
time to peak temperature
Time
Product Characteristics
Part Numbering System
SP 7538P U T G
TVS Diode Arrays
(SPA® Diodes)
G= Green
T= Tape & Reel
Series
Critical Zone
TL to TP
Ramp-up
TL
TS(max)
25
Peak Temperature (TP)
tP
TP
Temperature
Reflow Condition
Package
U=μDFN-9 (3.8x1.0mm)
Lead Plating
Matte Tin
Lead Material
Copper Alloy
Lead Coplanarity
0.004 inches(0.102mm)
Substrate material
Silicon
Body Material
Molded Epoxy
Flammability
UL 94 V-0
Notes :
1. All dimensions are in millimeters
2. Dimensions include solder plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.
5. Package surface matte finish VDI 11-13.
Ordering Information
Part Marking System
Part Number
Package
Marking
Min. Order Qty.
SP7538PUTG
µDFN-9
SP7538x
3000
©2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 03/17/16
SP7538 x
Product Series
Assembly Site
TVS Diode Arrays (SPA® Diodes)
Low Capacitance ESD Protection - SP7538P Series
Package Dimensions
µDFN-9 (3.8x1.0mm)
JEDEC MO-229
Symbol
Millimeters
Inches
Min
Nom
Max
Min
Nom
Max
0.45
0.50
0.55
0.018
0.020
0.022
A1
-
0.02
0.05
-
0.001
0.002
b
0.15
0.20
0.25
0.006
0.008
0.010
c
0.10
0.15
0.20
0.004
0.006
0.008
D
3.70
3.80
3.90
0.146
0.150
0.154
A
0.80 BSC
e
0.031 BSC
0.90 BSC
e1
0.035 BSC
E
0.90
1.00
1.10
0.035
0.039
0.043
L
0.20
0.30
0.40
0.008
0.012
0.016
Embossed Carrier Tape & Reel Specification
5° Max
©2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 03/17/16
Symbol
Millimeters
A0
1.35 +/- 0.10
B0
4.00 +/- 0.05
D
Ø 1.50 + 0.1/ -0
D1
Ø 1.00 +/-0.05
E
1.75 +/- 0.10
F
5.50 +/- 0.05
K0
0.72 +/- 0.05
P
4.00 +/- 0.10
P0
4.00 +/- 0.10
P2
2.00 +/- 0.05
T
0.25 +/- 0.02
W
12.00 + 0.30 /- 0.10