SSS1510 150V N-Channel MOSFET Main Product Characteristics VDSS 150V RDS(on) 9.8mΩ (typ.) ID 100A ① TO-220 Features and Benefits Marking and Pin Schematic Diagram Assignment Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Lead free product Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 100 ① ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 93 ① IDM Pulsed Drain Current ② 400 Power Dissipation ③ 300 W Linear Derating Factor 2.0 W/°C VDS Drain-Source Voltage 150 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=0.3mH 1026 mJ IAS Avalanche Current @ L=0.3mH 82.7 A -55 to +175 °C PD @TC = 25°C TJ TSTG www.goodark.com Operating Junction and Storage Temperature Range Page 1 of 7 A Rev.1.0 SSS1510 150V N-Channel MOSFET Thermal Resistance Symbol Characteristics RθJC RθJA Typ. Max. Units Junction-to-case ③ — 0.5 °C/W Junction-to-ambient (t ≤ 10s) ④ — 62 °C/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 °C/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source breakdown voltage 150 — — V VGS = 0V, ID= 1mA RDS(on) Static Drain-to-Source on-resistance — 9.8 10.8 mΩ VGS=10V,ID =100A — 10 11 mΩ VGS=8V,ID =50A VGS(th) Gate threshold voltage 2.0 — 4.0 — 2.3 — IDSS Drain-to-Source leakage current — — 1 — — 50 IGSS Gate-to-Source forward leakage — — 100 — — -100 td(on) Turn-on delay time — 33 — tr Rise time — 105 — td(off) Turn-Off delay time — 73 — tf Fall time — 19 — ID =100A Ciss Input capacitance — 5634 — VGS = 0V Coss Output capacitance — 657 — Crss Reverse transfer capacitance — 12.6 — V μA nA Conditions VDS = VGS, ID =250μA TJ = 125°C VDS =120V,VGS = 0V TJ = 125°C VGS =20V VGS = -20V VGS=10V, VDD =75V, nS pF RL=0.75Ω, RGEN=1.6Ω VDS = 50V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage www.goodark.com Min. Typ. Max. Units — — 100 ① A — — 400 A — 0.94 1.3 V Page 2 of 7 Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=100A, VGS=0V, TJ = 25°C Rev.1.0 SSS1510 150V N-Channel MOSFET Test Circuits and Waveforms Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C www.goodark.com Page 3 of 7 Rev.1.0 SSS1510 150V N-Channel MOSFET Typical Electrical and Thermal Characteristics Figure 2. Gate to source cut-off voltage Figure 1: Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage Vs. Case Temperature www.goodark.com Figure 4: Normalized On-Resistance Vs. Case Temperature Page 4 of 7 Rev.1.0 SSS1510 150V N-Channel MOSFET Typical Electrical and Thermal Characteristics Figure 5. Maximum Drain Current Vs. Case Figure 6.Typical Capacitance Vs. Drain-to-Source Temperature Voltage Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.goodark.com Page 5 of 7 Rev.1.0 SSS1510 150V N-Channel MOSFET Mechanical Data TO-220 PACKAGE OUTLINE DIMENSION_GN E ФP A ϴ1 D D2 ФP1 ϴ ϴ2 D1 b1 b A1 ϴ4 L c e Symbol A A1 b b1 c D D1 D2 E E1 ФP ФP1 e L ϴ1 ϴ2 ϴ3 ϴ4 www.goodark.com Dimension In Millimeters Min Nom Max 1.300 2.200 2.400 2.600 1.270 1.270 1.370 1.470 0.500 15.600 28.700 9.150 9.900 10.000 10.100 10.160 3.600 1.500 2.54BSC 12.900 13.100 13.300 0 7 0 7 30 0 3 Page 6 of 7 E Dimension In Inches Nom Max 0.051 0.094 0.102 0.050 0.054 0.058 0.020 0.614 1.130 0.360 0.394 0.398 0.400 0.142 0.059 0.1BSC 0.508 0.516 0.524 0 7 0 7 Min 0.087 0.050 0.390 - 50 70 90 10 30 50 Rev.1.0 SSS1510 150V N-Channel MOSFET Ordering and Marking Information Device Marking: SSS1510 Package (Available) TO-220 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Inner Box Boxes/Carton Box Units/Carton Box TO-220 50 20 1000 6000 6 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Tj=125℃ to 175℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=125℃ or 175℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices www.goodark.com Page 7 of 7 Rev.1.0