SSFT4003/SSFT4003A
40V N-Channel MOSFET
Main Product Characteristics
VDSS
40V
RDS(on)
2.4mΩ(typ.)
ID
200A
①
TO-220
SSFT4003
TO-263
Schematic Diagram
SSFT4003A
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Parameter
Max.
ID @ TC = 25°C
Symbol
Continuous Drain Current, VGS @ 10V
200①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
135①
IDM
Pulsed Drain Current②
750
Power Dissipation③
220
W
Linear Derating Factor
1.5
W/°C
VDS
Drain-Source Voltage
40
V
VGS
Gate-to-Source Voltage
± 24
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
912
mJ
IAS
Avalanche Current @ L=0.3mH
78
A
-55 to +175
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 8
Units
A
Rev.2.1
SSFT4003/SSFT4003A
40V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
0.62
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
60
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
40
—
—
V
—
2.4
3.5
—
4.1
—
2
—
4
—
2.0
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
104
—
Qgs
Gate-to-Source charge
—
16
—
Qgd
Gate-to-Drain("Miller") charge
—
40
—
VGS = 10V
td(on)
Turn-on delay time
—
21.4
—
VGS=10V, VDS =20V,
tr
Rise time
—
57.8
—
td(off)
Turn-Off delay time
—
48.7
—
tf
Fall time
—
19.9
—
ID = 75A
Ciss
Input capacitance
—
7615
—
VGS = 0V,
Coss
Output capacitance
—
959
—
Crss
Reverse transfer capacitance
—
342
—
mΩ
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
TJ = 125℃
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
nA
VDS = 40V,VGS = 0V
TJ = 125°C
VGS =24V
VGS = -24V
ID = 75A,
nC
ns
pF
VDS 32V,
RL=0.26Ω,
RGEN=3.0Ω，
VDS = 25V,
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
200 ①
A
—
—
750
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.86
1.3
V
IS=30A, VGS=0V
trr
Reverse Recovery Time
—
29.6
—
ns
TJ = 25°C, IF =50A, di/dt =
Qrr
Reverse Recovery Charge
—
22.2
—
nC
100A/μs
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Page 2 of 8
Rev.2.1
SSFT4003/SSFT4003A
40V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max junction temperature.
③The power dissipation PD is based on max junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
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Page 3 of 8
Rev.2.1
SSFT4003/SSFT4003A
40V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 4: Normalized On-Resistance Vs. Case
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Temperature
Case Temperature
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Page 4 of 8
Rev.2.1
SSFT4003/SSFT4003A
40V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 8
Rev.2.1
SSFT4003/SSFT4003A
40V N-Channel MOSFET
Mechanical Data
TO220 PACKAGE OUTLINE DIMENSION_GN
A
A1
A2
b
b1
b2
C
D
D1
D2
E
E1
ФP
Dimension In Millimeters
Min
Nom
Max
4.400
4.550
4.700
1.270
1.300
1.330
2.240
2.340
2.440
1.270
1.270
1.370
1.470
0.750
0.800
0.850
0.480
0.500
0.520
15.100
15.400
15.700
8.800
8.900
9.000
2.730
2.800
2.870
9.900
10.000
10.100
8.700
3.570
3.600
3.630
Min
0.173
0.050
0.088
0.050
0.030
0.019
0.594
0.346
0.107
0.390
0.141
ФP 1
1.400
1.600
0.055
13.570
0.518
Symbol
e
e1
L
L1
13.150
1.500
2.54BSC
5.08BSC
13.360
7.35REF
Dimension In Inches
Nom
Max
0.179
0.185
0.051
0.052
0.092
0.096
0.050
0.054
0.058
0.031
0.033
0.020
0.021
0.606
0.618
0.350
0.354
0.110
0.113
0.394
0.398
0.343
0.142
0.143
0.059
0.1BSC
0.2BSC
0.526
0.29REF
0.063
0.534
L2
2.900
3.000
3.100
0.114
0.118
0.122
L3
1.650
1.750
1.850
0.065
0.069
0.073
L4
0.900
1.000
1.100
0.035
0.039
0.043
Q1
Q2
Q3
Q4
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0
7
0
7
5
5
0
5
0
1
0
9
0
9
0
7
0
3
0
0
0
9
0
5
Page 6 of 8
5
0
0
7
9
5
0
7
5
0
1
0
0
9
0
9
0
50
7
3
0
0
0
Rev.2.1
SSFT4003/SSFT4003A
40V N-Channel MOSFET
D2PAK PACKAGE OUTLINE DIMENSION
Symbol
A
B
C
D1
D2
D3
E
F
G
H
I
K
a1
a2
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Dimension In Millimeters
Min
Max
9.660
10.280
1.020
1.320
8.590
9.400
1.140
1.400
0.700
0.950
5.080 (TYP)
15.090
15.390
1.150
1.400
4.300
4.700
2.290
2.790
0.250 (TYP)
1.300
1.600
0.450
0.650
00
80
Page 7 of 8
Dimension In Inches
Min
Max
0.380
0.405
0.040
0.052
0.338
0.370
0.045
0.055
0.028
0.037
0.200 (TYP)
0.594
0.606
0.045
0.055
0.169
0.185
0.090
0.110
0.010 (TYP)
0.051
0.063
0.018
0.026
10
80
Rev.2.1
SSFT4003/SSFT4003A
40V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSFT4003 & SSFT4003A
Package (Available)
TO220/TO263
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package Units/ Tubes/Inner
Type
Tube Box
Units/Inner
Box
TO220
D2PAK
1000
1000
50
50
20
20
Inner
Boxes/Carton
Box
6
6
Units/Carton
Box
6000
6000
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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Page 8 of 8
Rev.2.1