SSFN2269

SSFN2269
20V Dual P-Channel MOSFET
DESCRIPTION
The SSFN2269 uses advanced trench technology to
provide excellent R DS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
GENERAL FEATURES
● VDS = -20V,ID =-3.3A
RDS(ON) < 90mΩ @ VGS=-4.5V
RDS(ON) < 120mΩ @ VGS=-2.5V
Schematic Diagram
● High Power and current handing capability
● Lead free product
● Surface Mount Package
Marking and Pin Assignment
APPLICATIONS
●Battery protection
●Load switch
●Power management
DFN2X2-6L
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
SSFN2269
SSFN2269
DFN2X2-6L
-
-
-
ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V DS
-20
V
Gate-Source Voltage
V GS
±8
V
ID
-3.3
A
IDM
-20
A
PD
1.5
W
TJ,TSTG
-55 To 150
℃
R θJA
83
℃/W
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
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Page 1 of 4
Rev.1.1
SSFN2269
20V Dual P-Channel MOSFET
ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-20
V
Zero Gate Voltage Drain Current
IDSS
VDS=-16V,V GS=0V
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±8V,V DS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-0.7
-1
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-4.5V, ID=-2A
70
90
mΩ
VGS=-2.5V, ID=-2A
91
120
mΩ
ON CHARACTERISTICS (Note 3)
Forward Transconductance
gFS
V DS=-5V,ID=-2A
-0.4
3
S
DYNAMIC CHARACTERISTICS (Note4)
Input Capacitance
Clss
VDS=-10V,V GS=0V,
F=1.0MHz
530
636
PF
100
120
PF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
60
72
PF
Turn-on Delay Time
td(on)
6
7.2
nS
Turn-on Rise Time
tr
12
14.4
nS
20
24
nS
6
7.2
nS
5.5
6.6
nC
1.0
1.2
nC
1.5
1.8
nC
-1
V
SWITCHING CHARACTERISTICS (Note 4)
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDD=-10V,ID=-2A
VGS=-4.5V,R GEN=2Ω
VDS=-10V,ID=-2A,
VGS=-4.5V
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1A
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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Page 2 of 4
Rev.1.1
SSFN2269
20V Dual P-Channel MOSFET
ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
ton
tr
td(on)
Rl
Vin
Vgs
Rgen
toff
tf
td(off)
D
Vout
90%
VOUT
90%
INVERTED
10%
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
R(t),Normalized Effective
Transient Thermal Impedance
Figure 2:Switching Waveforms
Square Wave Pluse Duration(sec)
Figure 3: Normalized Maximum Transient Thermal Impedance
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Page 3 of 4
Rev.1.1
SSFN2269
20V Dual P-Channel MOSFET
DFN2X2-6L PACKAGE INFORMATION
Top View
Bottom View
Side View
Dimensions In Millimete rs(mm)
Symbol
Min.
Nom.
Max.
A
0.70
0.75
0.80
A1
0.00
--
0.05
A3
0.20 REF.
D
1.95
2.00
2.05
E
D2
1.95
0.44
2.00
0.59
2.05
0.69
E2
0.84
0.99
1.09
b
0.25
0.30
0.35
L
e
0.175
0.275
0.65 BSC
0.375
NOTES:
1. Tolerance ±0.10mm (4 mil) unless otherwise specified
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 4 of 4
Rev.1.1