SSFM3008H1
30V N-Channel MOSFET
Main Product Characteristics
VDSS
30V
RDS(on)
7.4mohm(typ.)
ID
20A
SSFM3008H1
SOP-8
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve the high
cell density and reduces the on-resistance, fast switching and soft reverse recovery time. These features
combine to make this design an extremely efficient and reliable device for use in power switching application
and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
20
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
16
IDM
Pulsed Drain Current②
136
PD @TC = 25°C
Power Dissipation③
3.1
W
VDS
Drain-Source Voltage
30
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.1mH
100
mJ
IAS
Avalanche Current @ L=0.1mH
44
A
-55 to + 175
°C
TJ
TSTG
Operating Junction and Storage Temperature Range
A
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
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Typ.
Max.
Units
Junction-to-case③
—
22
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
35
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
65
℃/W
Page 1 of 7
Rev.1.0
SSFM3008H1
30V N-Channel MOSFET
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
unless otherwise specified
Min.
Typ.
Max.
Units
Conditions
30
36.5
—
V
—
7.4
8
mΩ
VGS=10V,ID =20A
—
11.5
14
mΩ
VGS=4.5V,ID =10A
Gate threshold voltage
1
—
3
V
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source leakage current
—
—
10
μA
VDS = 30V,VGS = 0V
IGSS
Gate-to-Source forward leakage
—
—
100
-100
—
—
Gfs
Forward Transconductance
4
7.6
—
Qg
Total gate charge
—
17.6
—
Qgs
Gate-to-Source charge
—
6.5
—
Qgd
Gate-to-Drain("Miller") charge
—
8.6
—
td(on)
Turn-on delay time
—
32.8
—
tr
Rise time
—
104.3
—
td(off)
Turn-Off delay time
—
12.9
—
tf
Fall time
—
8.5
—
Ciss
Input capacitance
—
1844
—
Coss
Output capacitance
—
342
—
Crss
Reverse transfer capacitance
—
215
—
nA
S
VGS = 0V, ID = 250μA
VGS =20V
VGS = -20V
VDS= 15V,ID=16A
VDS=15V,
nC
ID=16A,
VGS=4.5V
ns
VGS=4.5V, VDS=15V,
RGEN=3Ω, ID=16A
VGS = 0V
pF
VDS = 15V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
Parameter
Continuous Source Current
Min.
Typ.
Max.
Units
—
—
20
A
Conditions
MOSFET symbol
showing the
ISM
Pulsed Source Current
—
—
136
A
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.7
1.0
V
IS=1.0A, VGS=0V
trr
Reverse Recovery Time
—
16.5
—
ns
TJ = 25°C, IF =3A, di/dt =
Qrr
Reverse Recovery Charge
—
8.2
—
nC
100A/μs
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Page 2 of 7
Rev.1.0
SSFM3008H1
30V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to- ambient thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
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Page 3 of 7
Rev.1.0
SSFM3008H1
30V N-Channel MOSFET
Typical Electrical Characteristics
100
90
1.E+01
125℃
1.E+00
1.E-01
1.E-02
25℃
1.E-03
VDS=5V
80
ID,drain current(A)
IS,source to drain current(A)
1.E+02
70
60
50
40
30
20
125℃
10
1.E-04
25℃
0
0
1.E-05
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
0.5
1.5
2
2.5
3
3.5
4
4.5
5
VGS,gate to source voltage(V)
VSD,source to drain voltage(V)
Figure 1: Body-Diode Characteristics
Figure 2: Typical Transfer Characteristics
3000
10
9
2500
8
Capacitance (pF)
VGS,gate to source voltage(V)
1
1.1
7
6
5
VDS=15V
4
ID=20A
3
Ciss
2000
1500
VGS=0,F=1MHZ
Ciss=Cgd+Cgs, Cds shorted
1000
2
Coss=Cds+Cgd
Coss
Crss=Cgd
500
Crss
1
0
0
0
5
10
15
20
25
30
0
35
5
10
15
20
25
VDS, drain to source voltage(V)
QG,gate charge(nC)
Figure 3: Gate-Charge Characteristics
Figure 4: Capacitance Characteristics
1000
200
Tj(max)=175℃
160
100
10uS
140
Ron limited
100uS
10
DC
1mS
Ta=25℃
120
100
80
60
10mS
1
Power ( W)
ID,drain current(A)
180
40
Tj(max)=175℃ Tc=25℃
20
0.1
0.01
0.1
1
10
100
0
0.0001
0.01
0.1
1
Pulse Width (s)
VDS,drain to source voltage(V)
Figure 5: Maximum Forward Biased Safe
Operating Area
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0.001
Figure 6: Single Pulse Power Rating
Junction-to-Case
Page 4 of 7
Rev.1.0
10
SSFM3008H1
30V N-Channel MOSFET
ZθJC,Transient Thermal
Resistance( Normalized
)
Typical Thermal Characteristics
10
t
Duty cycle D=
0.5,0.3,0.1,0.05,0.01,single
tp
1
0.1
D=tp/t
TJ（max）＝PDM*ZθJC*RθJC+TC
RθJC=2.5℃/W
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
Figure 7: Normalized Thermal transient Impedance Curve
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Page 5 of 7
Rev.1.0
SSFM3008H1
30V N-Channel MOSFET
Mechanical Data
SOP-8 PACKAGE INFORMATION
Notes：
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be
less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 6 of 7
Rev.1.0
SSFM3008H1
30V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSFM3008H1
Package (Available)
SOP-8
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
SOP-8
Units/
Tube
2500
Tubes/
Inner Box
2
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/Inner Inner Boxes/
Box
Carton Box
5000
8
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
TJ=125℃ to 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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Page 7 of 7
Units/
Carton Box
40000
Rev.1.0