SSFM2508
25V N-Channel MOSFET
Main Product Characteristics:
25V
VDSS
SSFM2508
RDS(on)
8mohm
ID
55A
TO-252 DPAK
Marking and pin
assignment
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for PWM, load switching and general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description:
It utilizes the latest FRRMOS (fast reverse recovery MOS) trench processing techniques to achieve
extremely low on resistance, fast switching speed and short reverse recovery time. These features
combine to make this design an extremely efficient and reliable device for use in PWM, load switching
and a wide variety of other applications
Absolute Max Rating:
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
55
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
45
IDM
Pulsed Drain Current②
120
ISM
Pulsed Source Current (Body Diode)②
120
PD @TC = 25°C
Power Dissipation③
50
W
PD @TC =100°C
Power Dissipation③
25
W
VDS
Drain-Source Voltage
25
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.1mH②
80
mJ
IAR
Avalanche Current @ L=0.1mH②
40
A
-55 to + 175
°C
Operating Junction and Storage Temperature
TJ TSTG
Range
Units
A
Thermal Resistance
Symbol
Characterizes
Value
Unit
RθJC
Junction-to-case③
2.5
℃/W
Junction-to-ambient (t ≤ 10s) ④
14
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
38
℃/W
RθJA
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Page 1 of 7
Rev.2.0
SSFM2508
25V N-Channel MOSFET
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max
Units
BVDSS
Drain-to-Source breakdown
25
—
—
V
—
6
8
mΩ
1.5
2
2.5
V
—
—
10
voltage
RDS(on)
Static Drain-to-Source
on-resistance
VGS(th)
IDSS
Gate threshold voltage
Drain-to-Source leakage current
—
VGS = 0V,
ID = 250μA
VGS = 10V,
ID = 30A
VDS = VGS,
ID = 250μA
VDS = 25V,
VGS = 0V
μA
—
Conditions
50
VDS = 25V,
VGS = 0V,
TJ = 55°C
IGSS
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
-100
—
—
Qg
Total gate charge
—
20.6
25
Qgs
Gate-to-Source charge
—
5.3
6
Qgd
Gate-to-Drain("Miller") charge
—
5.9
6.5
Qg(th)
Gate charge at shreshold
—
2.6
3
Vplateau
gate plateau voltage
—
4.1
5
td(on)
Turn-on delay time
—
10.4
—
tr
Rise time
—
6.4
—
td(off)
Turn-Off delay time
—
22.4
—
tf
Fall time
—
7.2
—
RGEN=3Ω
Ciss
Input capacitance
—
1210
—
VGS = 0V,
Coss
Output capacitance
—
320
—
Crss
Reverse transfer capacitance
—
220
—
Rg
Gate resistance
—
—
1.5
nA
nC
VGS =20V
VGS = -20V
ID = 30A,
VDS=12.5V,
VGS = 10V
V
VGS=10V,
ns
pF
VDS=15V,
RL=10Ω,
VDS = 15V,
ƒ = 1.0MHz
Ω
VGS=0V, VDS=0V,
f=1MHz
Source-Drain Ratings and Characteristics
Symbol
Parameter
IS
Maximum Body-Diode
Min.
Continuous Curren
Typ.
Max
Units
55
—
A
Conditions
VSD
Diode Forward Voltage
—
0.7
1
V
IS=1A, VGS=0V
trr
Reverse Recovery Time
—
9.5
—
ns
TJ = 25°C, IF =30A,
Qrr
Reverse Recovery Charge
—
3.8
—
nC
ton
Forward Turn-on Time
VDD = 30V, di/dt =
200A/μs
Intrinsic turn-on time is negligible
(turn-on is dominated by LS+LD)
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Page 2 of 7
Rev.2.0
SSFM2508
25V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
10V
6V
90
ID,drain to source current(A)
ID,drain to source current(A)
100
7V
5V
80
70
4.5V
60
50
4V
40
30
3.5V
20
10
100
90
70
60
50
40
30
0.5
1
1.5
2
2.5
3
3.5
4
4.5
125℃
20
10
25℃
0
0
0
VDS=5V
80
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
5
VDS,drain to source voltage(V)
VGS,gate to source voltage(V)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Figure 2: Typical Transfer Characteristics
Rdson,Drain-to-Source On
Resistance(Normalized)
Rdson,Drain-to-Source On
Resistance(Normalized)
Figure 1: Typical Output Characteristics
VGS=4.5V
VGS=10V
0
5
10
15
20
25
1.9
1.8
VGS=10V
1.7
1.6
1.5
1.4
ID=30A
VGS=4.5V
1.3
1.2
1.1
1
ID=20A
0.9
0.8
0
30
50
75
100
125
150
175
200
Tj,Junction Temperature(°C)
ID,drain current(A)
Figure 3: On-Resistance vs. Drain Current and
Figure 4: On-Resistance vs. Junction
Gate Voltage
Temperature
30
1.E+02
ID=30V
25
IS,source to drain current(A)
Rdson,Drain-to-Source On
Resistance(Normalized)
25
20
125℃
15
10
25℃
5
1.E+01
125℃
1.E+00
1.E-01
1.E-02
25℃
1.E-03
1.E-04
0
2
3
4
5
6
7
8
9
10
1.E-05
0
VGS,gate to source voltage(V)
VSD,source to drain voltage(V)
Figure 5: On-Resistance vs. Gate-Source Voltage
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0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Page 3 of 7
Figure 6: Body-Diode Characteristics
Rev.2.0
1
1.1
SSFM2508
25V N-Channel MOSFET
10
1800
9
1600
8
1400
Capacitance (pF)
V GS,gate to sour ce voltage(V)
Typical Electrical and Thermal Characteristics
7
6
5
4
VDS=12.5V
3
ID=30V
2
1000
0
15
Coss=Cds+Cgd
Crss=Cgd
Crss
0
20
5
10
15
20
25
VDS, drain to source voltage(V)
QG,gate charge(nC)
Figure 7: Gate-Charge Characteristics Figure
8: Capacitance Characteristics
200
1000
180
160
100
10uS
Ron
limited
10
100uS
DC
1
1mS
100
80
60
40
20
Tc=25℃
0.1
0.01
Ta=25℃
120
10mS
Tj(max)=175℃
Tj(max)=175℃
140
Power ( W)
ID,drain current(A)
Coss
400
0
10
Ciss=Cgd+Cgs, Cds shorted
600
200
5
VGS=0,F=1MHZ
800
1
0
Ciss
1200
0.1
1
10
0
0.0001
100
0.001
0.01
0.1
1
10
Pulse Width (s)
VDS,drain to source voltage(V)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating
Operating Area(⑤)
Junction-to-Case (⑤)
60
Power Dissipation (W)
60
I D,d rai n c urr ent (A )
50
40
30
20
10
50
40
30
20
10
0
0
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
TCASE (°C)
TCASE (°C)
Figure 11: Power De-rating (③)
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Figure 12: Current De-rating (③)
Page 4 of 7
Rev.2.0
175
SSFM2508
25V N-Channel MOSFET
ZθJC,Transient Thermal
Resistance( Normalized
)
Typical Electrical and Thermal Characteristics
10
Duty cycle D= 0.5,0.3,0.1,0.05,0.01,single
1
0.1
Duty cycle D=T1/T,
TJ（max）＝PDM*ZθJC*RθJC+TC
RθJC=3℃/W
0.01
0.00001 0.0001
0.001
0.01
0.1
Pulse Width (s)
1
10
100
ZθJA,Transient Thermal
Resistance( Normalized
)
Figure 13: Normalized Maximum Transient Thermal Impedance (⑤)
1
0.1
Duty cycle D=T1/T,
0.01
TJ（max）＝PDM*ZθJA*RθJA+TA
Duty cycle
D=0.5,0.3,0.1,
0.05,0.01,single
0.001
0.00001
0.0001
0.001
RθJA=50℃/W
0.01
0.1
1
Pulse Width (s)
10
100
Figure 14: Normalized Maximum Transient Thermal Impedance (⑥)
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Page 5 of 7
Rev.2.0
1000
SSFM2508
25V N-Channel MOSFET
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still
air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the device
mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
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Page 6 of 7
Rev.2.0
SSFM2508
25V N-Channel MOSFET
Mechanical Data：
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Page 7 of 7
Rev.2.0