SSFD3005 30V P-Channel MOSFET D DESCRIPTION The SSFD3005 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic Diagram GENERAL FEATURES ● VDS =- 30V,ID =-85A RDS(ON) < 7.5mΩ @ VGS=-10V RDS(ON) < 6mΩ @ VGS=-20V ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management TO-252E-2-M Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSFD3005 SSFD3005 TO-252E-2-M - - - ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±25 V ID(25℃) -85 A ID(70℃) -68 A IDM -200 A PD 100 W TJ,TSTG -55 To 150 ℃ R θJA 41 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage www.goodark.com BV DSS VGS=0V ID=-250μA Page 1 of 4 -30 V Rev.1.0 SSFD3005 30V P-Channel MOSFET Zero Gate Voltage Drain Current IDSS V DS=-24V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±25V,V DS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -2.5 -3.5 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-20A 6.3 7.5 mΩ VGS=-20V, ID=-20A 5.1 6 mΩ ON CHARACTERISTICS (Note 3) Forward Transconductance g FS VDS=-5V,ID=-20A -1.5 20 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss V DS=-15V,VGS=0V, F=1.0MHz 4300 PF 1000 PF Output Capacitance Coss Reverse Transfer Capacitance C rss 750 PF Turn-on Delay Time td(on) 20 nS Turn-on Rise Time tr 30 nS 50 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time VDS=-15V,V GS=-10V,RGEN=3Ω ID=1A td(off) Turn-Off Fall Time tf 35 nS Total Gate Charge Qg 95 nC Gate-Source Charge Q gs 20 nC Gate-Drain Charge Q gd 30 nC Body Diode Reverse Recovery Time T rr 40 nS Body Diode Reverse Recovery Charge Qrr 30 nC VDS=-15V,ID=-20A,V GS=-10V IF=-20A, dI/dt=100A/µs DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD VGS=0V,IS=-1A -0.72 -1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.0 SSFD3005 30V P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms ZthJA Normalized Transient Thermal Resistance Figure 1:Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.0 SSFD3005 30V P-Channel MOSFET TO-252E-2-M PACKAGE INFORMATION Dimensions in Millimeters UNIT:mm NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.0