SSF7NS65G
650V N-Channel MOSFET
Main Product Characteristics
VDSS
650V
RDS(on)
0.58Ω (typ.)
ID
7A
①
TO-251
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Lead free product
Description
The SSF7NS65G series MOSFET is a new technology, which combines an innovative super junction
technology and advance process.
This new technology achieves low RDS(ON), energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Parameter
Max.
ID @ TC = 25°C
Symbol
Continuous Drain Current, VGS @ 10V
7 ①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
5 ①
IDM
Pulsed Drain Current ②
28
Power Dissipation ③
83
W
Linear Derating Factor
0.67
W/°C
VDS
Drain-Source Voltage
650
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=15.2mH
68
mJ
IAR
Avalanche Current @ L=15.2mH
3
A
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 7
Units
A
Rev.1.2
SSF7NS65G
650V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
Typ.
Max.
Units
RθJC
Junction-to-case ③
—
1.5
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
83
℃/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
V
Conditions
650
—
—
—
0.58
0.65
—
1.29
—
2
—
4
—
2.75
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
12.8
—
Qgs
Gate-to-Source charge
—
1.8
—
Qgd
Gate-to-Drain("Miller") charge
—
6.2
—
VGS = 10V
td(on)
Turn-on delay time
—
10.5
—
VGS=10V, VDS =400V,
tr
Rise time
—
5.8
—
td(off)
Turn-Off delay time
—
29
—
tf
Fall time
—
16
—
ID =3.2A
Ciss
Input capacitance
—
470
—
VGS = 0V
Coss
Output capacitance
—
26.5
—
VDS = 100V
Crss
Reverse transfer capacitance
—
3.07
—
ƒ = 1MHz
—
20
—
—
85
—
Co(er)
Co(tr)
Effective output capacitance, energy
related⑤
Effective output capacitance, time
related⑥
Ω
VGS = 0V, ID = 250μA
VGS=10V,ID = 2.1A
TJ = 125℃
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
nA
VDS = 650V,VGS = 0V
TJ = 125°C
VGS =30V
VGS = -30V
ID = 3.2A,
nC
ns
pF
VDS=480V,
RL=125Ω,
RGEN=6.8Ω
VGS=0V,
VDS=0...480V
ID=constant,
VGS=0V
VDS=0...480V
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
7 ①
A
—
—
28
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.85
1.2
V
IS=4.6A, VGS=0V
trr
Reverse Recovery Time
—
169
—
nS
TJ = 25°C, IF =1.2A,
Qrr
Reverse Recovery Charge
—
723
—
nC
di/dt = 100A/μs
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Page 2 of 7
Rev.1.2
SSF7NS65G
650V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to
80% V(BR)DSS
⑥Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to
80% V(BR)DSS
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Page 3 of 7
Rev.1.2
SSF7NS65G
650V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
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Figure 4: Normalized On-Resistance Vs. Case
Temperature
Page 4 of 7
Rev.1.2
SSF7NS65G
650V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6. Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.2
SSF7NS65G
650V N-Channel MOSFET
Mechanical Data
TO-251 PACKAGE OUTLINE DIMENSION
Symbol
A
A2
b
b1
b3
c
c1
D
D1
E
E1
e
H
L1
L3
L5
θ1
θ2
G
G1
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Dimension In Millimeters
Min
Nom
Max
2.200
2.300
2.380
0.970
1.070
1.170
0.720
0.780
0.850
0.710
0.760
0.810
5.230
5.330
5.460
0.470
0.530
0.580
0.460
0.510
0.560
6.000
6.100
6.200
5.300REF
6.500
6.600
6.700
4.700
4.830
4.920
2.286BSC
16.100
16.400
16.600
9.200
9.400
9.600
0.900
1.020
1.250
1.700
1.800
1.900
o
o
o
7
9
5
o
5
0.000
0.000
7
o
o
9
0.076
0.076
Page 6 of 7
Min
0.087
0.038
0.028
0.028
0.206
0.019
0.018
0.236
0.256
0.185
0.634
0.362
0.035
0.067
o
5
o
5
0.000
0.000
Dimension In Inches
Nom
0.091
0.042
0.031
0.030
0.210
0.021
0.020
0.240
0.209REF
0.260
0.190
0.090BSC
0.646
0.370
0.040
0.071
o
7
o
7
0.000
0.000
Max
0.094
0.046
0.033
0.032
0.215
0.023
0.022
0.244
0.264
0.194
0.654
0.378
0.049
0.075
o
9
o
9
0.003
0.003
Rev.1.2
SSF7NS65G
650V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF7NS65G
Package (Available)
TO-251(IPAK)
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO-251
80
60
4800
24000
5
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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Page 7 of 7
Rev.1.2