SSF7008
68V N-Channel MOSFET
Main Product Characteristics
VDSS
68V
RDS(on)
5.6mΩ(typ.)
ID
84A
①
TO- 220
Schematic Diagram
Assignment
Features and Benefits
Marking and Pin
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Parameter
Max.
ID @ TC = 25°C
Symbol
Continuous Drain Current, VGS @ 10V
84 ①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
75 ①
IDM
Pulsed Drain Current ②
336
Power Dissipation ③
200
W
Linear Derating Factor
2.0
W/°C
VDS
Drain-Source Voltage
68
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
437.4
mJ
IAS
Avalanche Current @ L=0.3mH
54
A
-55 to + 175
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 7
Units
A
Rev.1.0
SSF7008
68V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case ③
—
0.75
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
68
—
—
V
—
5.6
8
—
9.89
—
2
—
4
—
2.41
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
TBD
—
Qgs
Gate-to-Source charge
—
TBD
—
Qgd
Gate-to-Drain("Miller") charge
—
TBD
—
VGS = —V
td(on)
Turn-on delay time
—
17.2
—
VGS=10V, VDS=30V,
tr
Rise time
—
16.4
—
td(off)
Turn-Off delay time
—
79.7
—
tf
Fall time
—
31.3
—
ID = 2A
Ciss
Input capacitance
—
5133
—
VGS = 0V
Coss
Output capacitance
—
376
—
Crss
Reverse transfer capacitance
—
235
—
mΩ
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
TJ = 125℃
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
VDS = 68V,VGS = 0V
TJ = 125℃
nA
VGS =20V
VGS = -20V
ID = —A,
nC
ns
pF
VDS=—V,
RL=15Ω,
RGEN=2.5Ω
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
84 ①
A
—
—
336
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.80
1.3
V
IS=68A, VGS=0V
trr
Reverse Recovery Time
—
36.1
—
nS
TJ = 25°C, IF =68A, di/dt =
Qrr
Reverse Recovery Charge
—
59.9
—
nC
100A/μs
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Page 2 of 7
Rev.1.0
SSF7008
68V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
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Page 3 of 7
Rev.1.0
SSF7008
68V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Temperature
Page 4 of 7
Rev.1.0
SSF7008
68V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.0
SSF7008
68V N-Channel MOSFET
Mechanical Data
TO220 PACKAGE OUTLINE DIMENSION_GN
E
ФP
A
ϴ1
D
D2
ФP1
ϴ3
ϴ2
D1
b1
b
A1
ϴ4
L
c
e
Symbol
A
A1
b
b1
c
D
D1
D2
E
E1
ФP
Dimension In Millimeters
Min
Nom
Max
1.300
2.200
2.400
2.600
1.270
1.270
1.370
1.470
0.500
15.600
28.700
9.150
9.900
10.000
10.100
10.160
3.600
-
ФP 1
e
L
ϴ1
ϴ2
ϴ3
ϴ4
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12.900
-
1.500
2.54BSC
13.100
13.300
70
-
E1
Min
0.087
0.050
0.390
-
Dimension In Inches
Nom
Max
0.051
0.094
0.102
0.050
0.054
0.058
0.020
0.614
1.130
0.360
0.394
0.398
0.400
0.142
-
0.508
0.059
0.1BSC
0.516
0.524
-
70
-
0
-
7
0
-
-
7
-
30
-
50
70
90
-
30
-
10
30
50
Page 6 of 7
-
Rev.1.0
SSF7008
68V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF7008
Package (Available)
TO220
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
Units/
Tube
TO220
Tubes/Inner
Box
50
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
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Units/Inner Inner
Box
Boxes/Carton
Box
1000
6
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Page 7 of 7
Units/Carton
Box
6000
Rev.1.0