SSF6NS70G/D/F
700V N-Channel MOSFET
Main Product Characteristics
VDSS
700V
RDS(on)
1.2Ω (typ.)
ID
5.2A
①
Features and Benefits
TO-251
TO-252
SSF6NS70G
SSF6NS70D
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Lead free product
TO-220F
Schematic Diagram
SSF6NS70F
Description
The SSF6NS70G/D/F series MOSFET is a new technology, which combines an innovative technology
and advance process. This new technology achieves low RDS(ON), energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute Max Rating
Parameter
Max.
ID @ TC = 25°C
Symbol
Continuous Drain Current, VGS @ 10V
5.2 ①
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
3.2①
IDM
Pulsed Drain Current ②
15.6
Power Dissipation ③
For TO-251/TO-252 package
For TO-220F package
PD @TC = 25°C
Linear Derating Factor
For TO-251/TO-252 package
For TO-220F package
50
31.2
0.4
0.25
Units
A
W
W/°C
VDS
Drain-Source Voltage
700
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=22.4mH
54
mJ
IAR
Avalanche Current @ L=22.4mH
2.2
A
-55 to +150
°C
TJ
TSTG
www.goodark.com
Operating Junction and Storage Temperature Range
Page 1 of 9
Rev.1.0
SSF6NS70G/D/F
700V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
Junction-to-case ③
Junction-to-ambient
RθJA
(t ≤ 10s) ④
Typ.
Max.
For TO-251/TO-252 package
—
2.5
For TO-220F package
—
4
For TO-251/TO-252 package
—
75
For TO-220F package
—
80
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Units
℃/W
℃/W
unless otherwise specified
Min.
Typ.
Max.
Units
V
700
—
—
—
1.2
1.4
—
2.9
—
2
—
4
—
2.8
—
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
8.3
—
Qgs
Gate-to-Source charge
—
2.3
—
Qgd
Gate-to-Drain("Miller") charge
—
2.6
—
td(on)
Turn-on delay time
—
10.1
—
tr
Rise time
—
18.4
—
td(off)
Turn-Off delay time
—
16.8
—
tf
Fall time
—
14.8
—
Ciss
Input capacitance
—
272
—
Coss
Output capacitance
—
168
—
Crss
Reverse transfer capacitance
—
3.14
—
Ω
V
μA
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 1A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS = 700V,VGS = 0V
TJ = 125°C
nA
VGS =30V
VGS = -30V
ID = 4A,
nC
VDS=100V,
VGS = 10V
ns
VGS=10V, VDS =380V,
RGEN=18Ω,ID =4.5A
VGS = 0V
pF
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
5.2 ①
A
—
—
15.6
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.84
1.2
V
IS=2.8A, VGS=0V
trr
Reverse Recovery Time
—
284
—
nS
TJ = 25°C, IF = IS,
Qrr
Reverse Recovery Charge
—
1395
—
nC
di/dt = 100A/μs
www.goodark.com
Page 2 of 9
Rev.1.0
SSF6NS70G/D/F
700V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
www.goodark.com
Page 3 of 9
Rev.1.0
SSF6NS70G/D/F
700V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Figure 4: Normalized On-Resistance Vs. Case
Case Temperature
www.goodark.com
Temperature
Page 4 of 9
Rev.1.0
SSF6NS70G/D/F
700V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6. Typical Capacitance Vs. Drain-to-Source
Temperature
www.goodark.com
Voltage
Page 5 of 9
Rev.1.0
SSF6NS70G/D/F
700V N-Channel MOSFET
Mechanical Data
TO-251 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
B
b
c
c1
D
D1
E
e
e1
L
www.goodark.com
Dimension In Millimeters
Min
Nom
Max
2.200
2.400
0.950
1.150
0.950
1.250
0.500
0.700
0.450
0.550
0.450
0.550
6.450
6.750
5.200
5.400
5.950
6.250
2.240
2.340
4.430
4.730
9.000
9.400
Dimension In Inches
Min
Nom
Max
0.087
0.094
0.037
0.045
0.037
0.049
0.020
0.028
0.018
0.022
0.018
0.022
0.254
0.266
0.205
0.213
0.234
0.246
0.088
0.092
0.174
0.186
0.354
0.370
Page 6 of 9
Rev.1.0
SSF6NS70G/D/F
700V N-Channel MOSFET
TO-252 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
B
B1
C
D
D1
D2
E
E1
e
H
F
K
V2
www.goodark.com
Dimension In Millimeters
Nom
Max
2.300
2.380
1.010
1.110
0.760
0.810
5.330
5.460
0.510
0.560
6.100
6.200
5.350 (REF)
2.900 (REF)
6.500
6.600
6.700
4.83 (REF)
2.186
2.286
2.386
9.800
10.100
10.400
1.400
1.500
1.700
1.600 (REF)
Min
2.200
0.910
0.710
5.130
0.460
6.000
0
Min
0.087
0.036
0.028
0.202
0.018
0.236
0.256
0.086
0.386
0.055
Dimension In Inches
Nom
0.091
0.040
0.030
0.210
0.020
0.240
0.211 (REF)
0.114 (REF)
0.260
0.190 (REF)
0.090
0.398
0.059
0.063 (REF)
Max
0.094
0.044
0.032
0.215
0.022
0.244
0.264
0.094
0.409
0.067
0
8 (REF)
8 (REF)
Page 7 of 9
Rev.1.0
SSF6NS70G/D/F
700V N-Channel MOSFET
TO220F PACKAGE OUTLINE DIMENSION_GN
Symbol
E
E1
E2
A
A1
A2
A3
c
D
D1
H1
e
ФP
ФP1
ФP2
ФP3
L
L1
L2
Q1
Q2
b1
b2
b3
www.goodark.com
Dimension In Millimeters
Min
Nom
Max
9.960
10.160
10.360
9.840
10.040
10.240
6.800
7.000
7.200
4.600
4.700
4.800
2.440
2.540
2.640
2.660
2.760
2.860
0.600
0.700
0.800
0.500
15.780
15.870
15.980
8.970
9.170
9.370
6.500
6.700
6.800
2.54BSC
3.080
3.180
3.280
1.400
1.500
1.600
0.900
1.000
1.100
0.100
0.200
0.300
12.780
12.980
13.180
2.970
3.170
3.370
0.830
0.930
1.030
o
o
o
5
7
3
o
o
o
45
47
43
1.180
1.280
1.380
0.760
0.800
0.840
1.420
Page 8 of 9
Min
0.392
0.387
0.268
0.181
0.096
0.105
0.024
0.621
0.353
0.256
0.121
0.055
0.035
0.004
0.503
0.117
0.033
o
3
o
43
0.046
0.030
-
Dimension In Inches
Nom
0.400
0.395
0.276
0.185
0.100
0.109
0.028
0.020
0.625
0.361
0.264
0.10BSC
0.125
0.059
0.039
0.008
0.511
0.125
0.037
o
5
o
45
0.050
0.031
-
Max
0.408
0.403
0.283
0.189
0.104
0.113
0.031
0.629
0.369
0.268
0.129
0.063
0.043
0.012
0.519
0.133
0.041
o
7
o
47
0.054
0.033
0.056
Rev.1.0
SSF6NS70G/D/F
700V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF6NS70G/D/F
Package (Available)
TO-251(IPAK)/TO-252(DPAK)/TO-220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TO-251
TO-252
TO-220F
80
75
50
60
48
20
4800
3600
1000
24000
18000
6000
5
5
6
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
www.goodark.com
Page 9 of 9
Rev.1.0