SSF6808D
68V N-Chanel MOSFET
Main Product Characteristics
VDSS
68V
RDS(on)
6.1mohm(typ.)
ID
79A
DPAK
Features and Benefits
Marking and Pin
Schematic Diagram
Assignment
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
79
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
56
IDM
Pulsed Drain Current②
316
Power Dissipation③
114
W
Linear Derating Factor
0.76
W/°C
VDS
Drain-Source Voltage
68
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
252
mJ
IAS
Avalanche Current @ L=0.3mH
41
A
-55 to + 175
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 7
A
Rev.1.0
SSF6808D
68V N-Chanel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
1.32
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
68
—
—
V
—
6.5
8
—
11.1
—
2
—
4
—
2.3
—
—
—
1
—
—
50
—
—
100
-100
—
—
Total gate charge
—
74.6
—
Qgs
Gate-to-Source charge
—
19.2
—
Qgd
Gate-to-Drain("Miller") charge
—
27.9
—
VGS = 10V
td(on)
Turn-on delay time
—
16.0
—
VGS=10V, VDS=60V,
tr
Rise time
—
96.4
—
td(off)
Turn-Off delay time
—
38.4
—
tf
Fall time
—
95.9
—
ID=60A
Ciss
Input capacitance
—
3627
—
VGS = 0V
Coss
Output capacitance
—
391
—
Crss
Reverse transfer capacitance
—
275
—
mΩ
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS = 68V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 50A,
nC
ns
pF
VDS=48V,
RL=1Ω,
RGEN=2.55Ω
VDS = 25V
ƒ =1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
79
A
—
—
316
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.80
1.3
V
IS=30A, VGS=0V
trr
Reverse Recovery Time
—
29.4
—
ns
TJ = 25°C, IF =68A, di/dt =
Qrr
Reverse Recovery Charge
—
30.2
—
nC
100A/μs
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Page 2 of 7
Rev.1.0
SSF6808D
68V N-Chanel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
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Page 3 of 7
Rev.1.0
SSF6808D
68V N-Chanel MOSFET
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Temperature
Page 4 of 7
Rev.1.0
SSF6808D
68V N-Chanel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 5 of 7
Rev.1.0
SSF6808D
68V N-Chanel MOSFET
Mechanical Data
DPAK PACKAGE OUTLINE DIMENSION
Symbol
A
A1
B
B1
C
D
D1
D2
E
E1
e
H
F
K
V2
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Dimension In Millimeters
Nom
Max
2.300
2.380
1.010
1.110
0.760
0.810
5.330
5.460
0.510
0.560
6.100
6.200
5.350 (REF)
2.900 (REF)
6.500
6.600
6.700
4.83 (REF)
2.186
2.286
2.386
9.800
10.100
10.400
1.400
1.500
1.700
1.600 (REF)
Min
2.200
0.910
0.710
5.130
0.460
6.000
Min
0.087
0.036
0.028
0.202
0.018
0.236
0.256
0.086
0.386
0.055
0
Dimension In Inches
Nom
0.091
0.040
0.030
0.210
0.020
0.240
0.211 (REF)
0.114 (REF)
0.260
0.190 (REF)
0.090
0.398
0.059
0.063 (REF)
Max
0.094
0.044
0.032
0.215
0.022
0.244
0.264
0.094
0.409
0.067
0
8 (REF)
8 (REF)
Page 6 of 7
Rev.1.0
SSF6808D
68V N-Chanel MOSFET
Ordering and Marking Information
Device Marking: SSF6808D
Package (Available)
DPAK
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package
Type
DPAK
Units/
Tube
Tubes/Inner
Box
80
50
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/Inner Inner
Box
Boxes/Carton
Box
4000
10
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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Page 7 of 7
Units/Carton
Box
40000
Rev.1.0