SSF6808A
68V N-Channel MOSFET
FEATURES
ID =84A
Advanced trench process technology
Ultra low Rdson, typical 5mohm
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
Lead free product
BV=68V
R DS (ON)=8mohm
DESCRIPTION
The SSF6808A is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6808A is
assembled in high reliability and qualified assembly house.
APPLICATIONS
SSF6808A Top View (TO-263)
Power switching application
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C
Max.
Continuous drain current,VGS@10V
84
ID@Tc=100ْC Continuous drain current,VGS@10V
76
Units
A
Pulsed drain current ①
310
Power dissipation
180
W
Linear derating factor
1.5
W/ْ C
VGS
Gate-to-Source voltage
±20
V
dv/dt
Peak diode recovery voltage
31
v/ns
EAS
Single pulse avalanche energy ②
400
mJ
EAR
Repetitive avalanche energy
TBD
IDM
PD@TC=25ْC
TJ
TSTG
Operating Junction and
–55 to +175
Storage Temperature Range
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
0.83
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @T J=25 ْC (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Test Conditions
BVDSS
Drain-to-Source breakdown voltage
68
—
—
V
VGS=0V,ID=250μA
RDS(on)
Static Drain-to-Source on-resistance
—
5
8
mΩ
VGS=10V,ID=30A
VGS(th)
Gate threshold voltage
2.0
4.0
V
VDS=VGS,ID=250μA
IDSS
IGSS
Drain-to-Source leakage current
Gate-to-Source forward leakage
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—
—
2
—
—
10
—
—
100
Page 1 of 5
VDS=68V,VGS=0V
μA
VDS=68V,
VGS=0V,TJ=150ْC
nA
VGS=20V
Rev.1.1
SSF6808A
68V N-Channel MOSFET
Qg
Gate-to-Source reverse leakage
—
—
-100
Total gate charge
—
90
—
ID=30A
VDD=30V
VGS=-20V
nC
Qgs
Gate-to-Source charge
—
18
—
Qgd
Gate-to-Drain("Miller") charge
—
28
—
VGS=10V
td(on)
Turn-on delay time
—
18.2
—
VDD=30V
Rise time
—
15.6
—
Turn-Off delay time
—
70.5
—
Fall time
—
13.8
—
VGS=10V
Ciss
Input capacitance
—
3150
—
VGS=0V
Coss
Output capacitance
—
300
—
Crss
Reverse transfer capacitance
—
240
—
tr
td(off)
tf
ID=2A ,RL=15Ω
nS
RG=2.5Ω
VDS=25V
pF
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ①
Min.
Typ.
Max.
—
—
84
Units
MOSFET symbol
A
—
—
310
Test Conditions
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
TJ=25ْC,IS=68A,VGS=0V ③
trr
Reverse Recovery Time
—
57
—
nS
TJ=25ْC,IF=68A
Qrr
Reverse Recovery Charge
—
107
—
nC
di/dt=100A/μs ③
ton
Forward Turn-on Time
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, ID = 37A, VDD = 30V.
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C.
EAS test circuit
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Gate charge test circuit
Page 2 of 5
Rev.1.1
SSF6808A
68V N-Channel MOSFET
Switch Time Test Circuit
Switch Waveforms
Figure1: Transfer Characteristic
Figure2:Capacitance
Figure3:On Resistance vs. Junction
Figure4:Breakdown Voltage vs. Junction
Temperature
Temperature
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Page 3 of 5
Rev.1.1
SSF6808A
68V N-Channel MOSFET
Figure5:Gate Charge
Figure7:Safe Operation
Figure6:Source-Drain Diode Forward Voltage
Figure8:Max Drain Current vs. Junction Temperature
Figure9:Transient Thermal Impedance Curve
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Page 4 of 5
Rev.1.1
SSF6808A
68V N-Channel MOSFET
TO-263 MECHANICAL DATA
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Page 5 of 5
Rev.1.1