SSF6808
68V N-Channel MOSFET
FEATURES
Advanced trench process technology
Ultra low Rdson, typical 6mohm
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
Lead free product
ID =84A
BV=68V
R DS (ON) =8mohm
DESCRIPTION
The SSF6808 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device
reliability and electrical parameter repeatability. SSF6808 is
assembled in high reliability and qualified assembly house.
APPLICATIONS
SSF6808 Top View (TO-220)
Power switching application
Absolute Maximum Ratings
Parameter
Max.
I D @T c =25ْ C Continuous drain current,VGS@10V
84
I D @T c =100ْC Continuous drain current,VGS@10V
76
B
B
B
B
B
B
B
B
A
Pulsed drain current ①
310
Power dissipation
181
W
Linear derating factor
1.5
W/ْ C
V GS
Gate-to-Source voltage
±20
V
dv/dt
Peak diode recovery voltage
31
v/ns
E AS
Single pulse avalanche energy ②
400
mJ
Repetitive avalanche energy
TBD
I DM
B
B
P D @T C =25ْC
B
Units
B
B
B
B
B
B
B
E AR
B
TJ
B
B
Operating Junction and
B
T STG
B
–55 to +175
Storage Temperature Range
B
ْC
Thermal Resistance
Parameter
R θJC
B
B
R θJA
B
B
Min.
Typ.
Max.
Junction-to-case
—
0.83
—
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @T J=25 ْC (unless otherwise specified)
Min.
Typ.
Drain-to-Source breakdown voltage
68
—
—
V
V GS =0V,I D =250μA
R DS(on)
Static Drain-to-Source on-resistance
—
5
8
mΩ
V GS =10V,I D =30A
V GS(th)
Gate threshold voltage
2.0
—
4.0
V
V DS =V GS ,I D =250μA
—
—
2
—
—
10
Parameter
BV DSS
B
B
B
B
B
I DSS
B
B
B
Drain-to-Source leakage current
Max. Units
Test Conditions
B
B
B
B
B
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
B
www.goodark.com
Page 1 of 5
B
B
B
B
B
B
B
B
B
V DS =68V,V GS =0V
B
B
μA
B
B
V DS =68V,
B
B
V GS =0V,T J =150ْC
B
I GSS
B
B
B
V GS =20V
B
nA
B
B
V GS =-20V
B
B
Rev.2.4
SSF6808
68V N-Channel MOSFET
Qg
B
B
Q gs
B
B
Q gd
B
B
t d(on)
B
B
tr
B
B
t d(off)
B
B
tf
B
B
C iss
B
B
C oss
B
C rss
B
B
B
Total gate charge
—
90
—
I D =30A
Gate-to-Source charge
—
18
—
Gate-to-Drain("Miller") charge
—
28
—
V GS =10V
Turn-on delay time
—
18.2
—
V DD =30V
Rise time
—
15.6
—
Turn-Off delay time
—
70.5
—
B
B
V DD =30V
nC
B
B
B
B
B
B
I D =2A ,R L =15Ω
B
nS
B
B
B
R G =2.5Ω
B
B
Fall time
—
13.8
—
V GS =10V
Input capacitance
—
3150
—
V GS =0V
Output capacitance
—
300
—
Reverse transfer capacitance
—
240
—
B
B
B
B
V DS =25V
pF
B
B
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
IS
B
B
(Body Diode)
I SM
B
Pulsed Source Current
V SD
B
t rr
B
B
B
Q rr
B
B
t on
B
B
Typ.
Max.
—
—
84
Units
Test Conditions
MOSFET symbol
A
showing the
integral reverse
—
—
310
Diode Forward Voltage
—
—
1.3
V
T J =25ْC,I S =68A,V GS =0V ③
Reverse Recovery Time
—
57
—
nS
T J =25ْC,I F =68A
Reverse Recovery Charge
—
107
—
nC
di/dt=100A/μs ③
(Body Diode) ①
B
Min.
Forward Turn-on Time
p-n junction diode.
B
B
B
B
B
B
B
B
B
B
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, ID = 37A, VDD = 30V.
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C.
EAS test circuit
www.goodark.com
Gate charge test circuit
Page 2 of 5
Rev.2.4
SSF6808
68V N-Channel MOSFET
Switch Time Test Circuit
Switch Waveforms
Transfer Characteristic
On Resistance vs. Junction Temperature
www.goodark.com
Capacitance
Breakdown Voltage vs. Junction Temperature
Page 3 of 5
Rev.2.4
SSF6808
68V N-Channel MOSFET
Gate Charge
Safe Operation Area
Source-Drain Diode Forward Voltage
Max Drain Current vs. Junction Temperature
Transient Thermal Impedance Curve
www.goodark.com
Page 4 of 5
Rev.2.4
SSF6808
68V N-Channel MOSFET
Mechanical Data
TO-220 PACKAGE OUTLINE DIMENSION_GN
E
ФP
A
ϴ1
D
D2
ФP1
ϴ
ϴ2
D1
b1
b
A1
ϴ4
L
c
e
Symbol
A
A1
b
b1
c
D
D1
D2
E
E1
ФP
ФP1
e
L
ϴ1
ϴ2
ϴ3
ϴ4
www.goodark.com
Dimension In Millimeters
Min
Nom
Max
1.300
2.200
2.400
2.600
1.270
1.270
1.370
1.470
0.500
15.600
28.700
9.150
9.900
10.000
10.100
10.160
3.600
1.500
2.54BSC
12.900
13.100
13.300
0
7
0
7
30
0
3
Page 5 of 5
E
Dimension In Inches
Nom
Max
0.051
0.094
0.102
0.050
0.054
0.058
0.020
0.614
1.130
0.360
0.394
0.398
0.400
0.142
0.059
0.1BSC
0.508
0.516
0.524
0
7
0
7
Min
0.087
0.050
0.390
-
50
70
90
10
30
50
Rev.2.4