SSF6092G1
60V N-Channel MOSFET
Main Product Characteristics
VDSS
60V
RDS(on)
70mΩ(typ)
ID
2.7A
SOT-23
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
2.7 ①
IDM
Pulsed Drain Current ②
10.8
Power Dissipation ③
1.25
W
Linear Derating Factor
0.01
W/°C
VDS
Drain-Source Voltage
60
V
VGS
Gate-to-Source Voltage
± 20
V
-55 to + 150
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 6
Units
A
Rev.1.0
SSF6092G1
60V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJA
Typ.
Max.
Junction-to-Ambient (t ≤ 10s)④
—
99
Junction-to-Ambient (PCB mounted, steady-state) ④
—
100
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
60
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
IDSS
IGSS
℃/W
unless otherwise specified
Min.
Typ.
Max.
Units
—
—
V
—
70
92
mΩ
Gate threshold voltage
1
—
2.5
V
VDS = VGS, ID = 250μA
Drain-to-Source leakage current
—
—
1
μA
VDS =60V, VGS =0V
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
-100
—
—
nA
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 2.7A
VGS =20V
VGS = -20V
Qg
Total gate charge
—
12
—
Qgs
Gate-to-Source charge
—
3.5
—
Qgd
Gate-to-Drain("Miller") charge
—
3.7
—
VGS = 10V
td(on)
Turn-on delay time
—
9.2
—
VGS=10V,
tr
Rise time
—
16.7
—
ID = 4A
nC
nS
VDD=40V
VDS =25V,
RGEN=50Ω
td(off)
Turn-Off delay time
—
35.4
—
tf
Fall time
—
8.6
—
ID =1.2A
Ciss
Input capacitance
—
641
—
VGS = 0V
Coss
Output capacitance
—
48
—
Crss
Units
Reverse transfer capacitance
—
38
pF
VDS = 25V
ƒ =1MHz
—
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
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Min.
Typ.
Max.
Units
—
—
2.7 ①
A
—
—
10.8
A
—
0.85
1.3
V
Page 2 of 6
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=2.7A, VGS=0V,TJ= 25°C
Rev.1.0
SSF6092G1
60V N-Channel MOSFET
Test Circuits and Waveforms:
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
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Page 3 of 6
Rev.1.0
SSF6092G1
60V N-Channel MOSFET
Thermal Characteristics：
Fig 1. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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Page 4 of 6
Rev.1.0
SSF6092G1
60V N-Channel MOSFET
Mechanical Data
SOT-23 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
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Dimension In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.95TYP
1.800
2.000
0.55REF
0.300
0.500
00
Dimension In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037TYP
0.071
0.079
0.022REF
0.012
0.020
80
00
Page 5 of 6
80
Rev.1.0
SSF6092G1
60V N-Channel MOSFET
Ordering and Marking Information
Device Marking: 6092
Package (Available)
SOT23
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
SOT23
Units/
Tape
Tapes/Inner
Box
3000
10
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
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Units/Inner Inner
Box
Boxes/Carton
Box
30000
4
Duration
Sample Size
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Page 6 of 6
Units/Carton
Box
120000
Rev.1.0