SSF6010A

SSF6010A
60V N-Channel MOSFET
FEATURES
ID =75A

Advanced trench process technology

avalanche energy, 100% test

Fully characterized avalanche voltage and current

Lead free product
BV=60V
R DS (ON)=8mΩ (typ.)
DESCRIPTION
The SSF6010A is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6010A is
assembled in high reliability and qualified assembly house.
APPLICATIONS
 Power switching application
SSF6010A Top View (D2PAK)
Absolute Maximum Ratings
Parameter
[email protected]=25ْ C
Max.
Continuous drain current,[email protected]
75
[email protected]=100ْC Continuous drain current,[email protected]
45
Units
A
Pulsed drain current ①
300
Power dissipation
144
W
Linear derating factor
0.74
W/ْ C
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
220
mJ
EAR
Repetitive avalanche energy
TBD
IDM
[email protected]=25ْC
TJ
TSTG
Operating Junction and
–55 to +175
Storage Temperature Range
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
1.04
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @T J=25 ْC (unless otherwise specified)
Parameter
Min. Typ.
Max. Units
Test Conditions
BVDSS Drain-to-Source breakdown voltage
60
—
—
V
VGS=0V,ID=250μA
RDS(on) Static Drain-to-Source on-resistance
—
8
10
mΩ
VGS=10V,ID=30A
VGS(th) Gate threshold voltage
2.0
4.0
V
VDS=VGS,ID=250μA
S
VDS=5V,ID=30A
gfs
IDSS
IGSS
Forward transconductance
—
58
—
—
—
2
—
—
10
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
Drain-to-Source leakage current
www.goodark.com
Page 1 of 5
VDS=60V,VGS=0V
μA
VDS=60V,
VGS=0V,TJ=150ْC
nA
VGS=20V
VGS=-20V
Rev.1.1
SSF6010A
60V N-Channel MOSFET
Total gate charge
—
45
—
Qgs
Gate-to-Source charge
—
4.2
—
Qgd
Gate-to-Drain("Miller") charge
—
15
—
td(on)
Turn-on delay time
—
14.6
—
Rise time
—
14.2
—
Turn-Off delay time
—
40
—
Qg
tr
td(off)
ID=30A
VDD=30V
nC
VGS=10V
VDD=30V
ID=2A ,RL=15Ω
nS
RG=2.5Ω
Fall time
—
7.3
—
VGS=10V
Ciss
Input capacitance
—
1480
—
VGS=0V
Coss
Output capacitance
—
190
—
Crss
Reverse transfer capacitance
—
135
—
tf
pF
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous
Source
Current
(Body Diode)
Pulsed
Source
Current
(Body Diode) ①
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr Reverse Recovery Charge
ton
Forward Turn-on Time
Min.
Typ.
Max.
—
—
75
Units
Test Conditions
MOSFET symbol
showing the
A
integral reverse
—
—
300
—
—
1.3
V
TJ=25ْC,IS=40A,VGS=0V ③
—
33
—
nS
TJ=25ْC,IF=60A
—
61
—
nC
di/dt=100A/μs ③
p-n junction diode.
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 30V,Id=37A.
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C.
EAS test circuit
www.goodark.com
Gate charge test circuit
Page 2 of 5
Rev.1.1
SSF6010A
60V N-Channel MOSFET
Switch Time Test Circuit
Switch Waveforms
Transfer Characteristic
Capacitance
On Resistance vs. Junction Temperature
Breakdown Voltage vs. Junction Temperature
www.goodark.com
Page 3 of 5
Rev.1.1
SSF6010A
60V N-Channel MOSFET
Gate Charge
Source-Drain Diode Forward Voltage
Safe Operation Area
Max Drain Current vs. Junction Temperature
Transient Thermal Impedance Curve
www.goodark.com
Page 4 of 5
Rev.1.1
SSF6010A
60V N-Channel MOSFET
TO263(D2PAK) MECHANICAL DATA
www.goodark.com
Page 5 of 5
Rev.1.1