SSF5510G
Preliminary
FEATURES
ID =56A
Advanced trench process technology
Ultra low Rdson, typical 8mohm
High avalanche energy, 100% test
Fully characterized avalanche voltage and current
Lead free product
BV=55V
R DS (ON) =8mohm （typ.）
DESCRIPTION
The SSF5510G is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SS5510G is assembled
in high reliability and qualified assembly house.
APPLICATIONS
SSF5510G Top View
Power switching application
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C
Max.
Continuous drain current,VGS@10V
56
ID@Tc=100ْC Continuous drain current,VGS@10V
40
Units
A
Pulsed drain current ①
224
Power dissipation
90
W
Linear derating factor
0.9
W/ْ C
VGS
Gate-to-Source voltage
±20
V
dv/dt
Peak diode recovery voltage
5.0
v/ns
EAS
Single pulse avalanche energy ②
405
mJ
EAR
Repetitive avalanche energy
TBD
IDM
PD@TC=25ْC
TJ
TSTG
Operating Junction and
–55 to +150
Storage Temperature Range
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
—
1.4
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @T J=25 ْC (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Test Conditions
BVDSS
Drain-to-Source breakdown voltage
55
—
—
V
VGS=0V,ID=250μA
RDS(on)
Static Drain-to-Source on-resistance
—
8
10
mΩ
VGS=10V,ID=34A
VGS(th)
Gate threshold voltage
2.0
4.0
V
VDS=VGS,ID=250μA
IDSS
Drain-to-Source leakage current
www.goodark.com
—
—
2
—
—
10
Page 1 of 4
VDS=55V,VGS=0V
μA
VDS=44V,
VGS=0V,TJ=150ْC
Rev.1.0
SSF5510G
Preliminary
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
Qg
Total gate charge
—
72
—
Qgs
Gate-to-Source charge
—
18
—
IGSS
VGS=20V
nA
VGS=-20V
ID=34A
VDD=44V
nC
Qgd
Gate-to-Drain("Miller") charge
—
20
—
VGS=10V
td(on)
Turn-on delay time
—
14
—
VDD=28V
Rise time
—
110
—
Turn-Off delay time
—
53
—
Fall time
—
76
—
Input capacitance
—
2580
—
VGS=0V
VDS=25V
tr
td(off)
tf
Ciss
Coss
Output capacitance
—
480
—
Crss
Reverse transfer capacitance
—
110
—
ID=34A
nS
RG=6.8Ω
VGS=10V
pF
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous
Source
Current
(Body Diode)
Pulsed
Source
Current
(Body Diode) ①
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr Reverse Recovery Charge
ton
Forward Turn-on Time
Min.
Typ.
Max.
—
—
52
Units
Test Conditions
MOSFET symbol
A
showing the
integral reverse
—
—
203
—
—
1.3
V
TJ=25ْC,IS=34A,VGS=0V ③
—
60
—
nS
TJ=25ْC,IF=34A
—
156
—
nC
di/dt=100A/μs ③
p-n junction diode.
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, ID = 52A, VDD = 30V
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
EAS test circuit
www.goodark.com
Gate charge test circuit
Page 2 of 4
Rev.1.0
SSF5510G
Preliminary
Switch Time Test Circuit
Switch Waveforms
Transient Thermal Impedance Curve
www.goodark.com
Page 3 of 4
Rev.1.0
SSF5510G
Preliminary
Symbol
A
A1
B
b
b1
c
c1
D
D1
E
e
e1
L
www.goodark.com
Dimensions In Millimeters
Min
Max
2.200
2.400
1.050
1.350
1.350
1.650
0.500
0.700
0.700
0.900
0.430
0.580
0.430
0.580
6.350
6.650
5.200
5.400
5.400
5.700
2.300 TYP
4.500
4.700
7.500
7.900
Page 4 of 4
Dimensions In Inches
Min
Max
0.087
0.094
0.042
0.054
0.053
0.065
0.020
0.028
0.028
0.035
0.017
0.023
0.017
0.023
0.250
0.262
0.205
0.213
0.213
0.224
0.091 TYP
0.177
0.185
0.295
0.311
Rev.1.0