SSF5508
55V N-Channel MOSFET
Main Product Characteristics
VDSS
55V
RDS(on)
4.5mohm(typ.)
ID
110A
TO-220
Features and Benefits
Marking and Pin
Schematic Diagram
Assignment
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Parameter
Max.
ID @ TC = 25°C
Symbol
Continuous Drain Current, VGS @ 10V①
110
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
80
IDM
Pulsed Drain Current②
440
Power Dissipation③
205
W
Linear Derating Factor
2.0
W/°C
VDS
Drain-Source Voltage
55
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH②
375
mJ
IAR
Avalanche Current @ L=0.3mH②
50
A
-55 to +175
°C
PD @TC = 25°C
TJ
TSTG
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Operating Junction and Storage Temperature Range
Page 1 of 7
Units
A
Rev.4.2
SSF5508
55V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
Typ.
Max.
Units
Junction-to-case③
—
0.73
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
62
℃/W
Junction-to-Ambient (PCB mounted, steady-state) ④
—
40
℃/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
55
—
—
V
—
4.5
5.5
—
7
—
2.5
—
3.5
—
2.4
—
—
—
1
—
—
50
—
—
100
-100
—
—
Total gate charge
—
124.7
—
Qgs
Gate-to-Source charge
—
24.46
—
Qgd
Gate-to-Drain("Miller") charge
—
48.68
—
td(on)
Turn-on delay time
—
19.62
—
tr
Rise time
—
18.82
—
td(off)
Turn-Off delay time
—
69.76
—
tf
Fall time
—
30.12
—
Ciss
Input capacitance
—
5607
—
Coss
Output capacitance
—
463
—
Crss
Reverse transfer capacitance
—
454
—
mΩ
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 68A
TJ = 125℃
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
nA
VDS = 55V,VGS = 0V
TJ = 125°C
VGS =20V
VGS = -20V
ID = 30A,
nC
VDS=30V,
VGS = 10V
VGS=10V, VDS=30V,
ns
RL=15Ω,
RGEN=2.55Ω
VGS = 0V
pF
VDS = 25V
ƒ = 600KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
110
A
—
—
440
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.94
1.3
V
IS=68A, VGS=0V
trr
Reverse Recovery Time
—
37
—
ns
TJ = 25°C, IF =68A, di/dt =
Qrr
Reverse Recovery Charge
—
60
—
nC
100A/μs
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Page 2 of 7
Rev.4.2
SSF5508
55V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
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Page 3 of 7
Rev.4.2
SSF5508
55V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage vs.
Figure 2. Gate to source cut-off voltage
Figure 4: Normalized On-Resistance Vs. Case
Temperature
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Page 4 of 7
Typical
Electrical and Thermal Characteristics
Temperature
Rev.4.2
SSF5508
55V N-Channel MOSFET
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
TO-220 Mechanical Data
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Page 5 of 7
Rev.4.2
SSF5508
55V N-Channel MOSFET
COMMON DIMENSIONS
MM
SYMBOL
MIN
NOM
MAX
A
4.3 4.57 4.7
A1
1.2
1.4
A2
2.2
2.4
2.9
b
0.77
0.9
b2
1.23
1.36
c
0.4
0.7
D
15.25 15.6 15.8
D1
8.59 9.1
9.4
E
9.66
10
10.4
E1
8.7
E2
9.66
10
10.4
e
2.54BSC
e1
5.08BSC
H1
6.2
6.5
6.7
L
12.6
14.27
L1
3.95
ΦP
3.5
3.6
3.9
Q
2.65 2.8 2.95
1°
3°
5°
θ1
θ2
1°
3°
5°
a1
1.8
a2
3.0
d1
2.0
d2
7.6
f1
1.4
f2
1.5
f3
1.0
g1
2.8
-
DETAIL ‘A’
OPTION1
OPTION2
OPTION3
DETAIL ‘B’ (BACK VIEW)
OPTION1
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OPTION2
DETAIL ‘C’
OPTION3
OPTION1
Page 6 of 7
OPTION2
Rev.4.2
SSF5508
55V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF5508
Package (Available)
TO220
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Packag
e Type
Units/Tu
be
TO220
50
Tubes/Inner
Box
20
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/Inner Inner
Box
Boxes/Carton
Box
1000
6
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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Page 7 of 7
Units/Carton
Box
6000
Rev.4.2