SSF4953 30V Dual P-Channel MOSFET DESCRIPTION D1 The SSF4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). D2 G1 G2 S1 S2 Schematic Diagram GENERAL FEATURES D1 D1 D2 D2 ●V DS = -30V,ID = -5.3A RDS(ON) < 85mΩ @ VGS=-4.5V RDS(ON) < 53mΩ @ VGS=-10V 8 7 6 5 4 9 53 ● High Power and current handing capability ● Lead free product ● Surface Mount Package 1 2 3 4 S1 G 1 S2 G 2 Marking and Pin Assignment APPLICATIONS ●Battery protection ●Load switch ●Power management SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 4953 SSF4953 SOP-8 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V ID -5.3 A IDM -20 A PD 2.0 W TJ,TSTG -55 To 150 ℃ R θJA 62.5 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±25V,VDS=0V ±100 nA www.goodark.com Page 1 of 6 -30 V Rev.2.0 SSF4953 30V Dual P-Channel MOSFET ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance VGS(th) R DS(ON) gFS V DS=VGS, ID =-250μA -1 -3 V VGS=-10V, ID =-5.3A 46 53 VGS=-4.5V, ID =-4A 70 85 VDS=-5V, ID =-5.3A 8 S 525 PF 135 PF PF mΩ DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=-15V,V GS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 70 Turn-on Delay Time td(on) 7 14 nS Turn-on Rise Time tr 13 24 nS 14 25 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) VDD=-15V, ID =-1A VGS=-10V,RGEN=6Ω Turn-Off Fall Time tf 9 17 nS Total Gate Charge Qg 6 9 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd V DS=-15V, ID=-4.5A,V GS=-10V 2.2 nC 2 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=-2.1A -0.8 -1.2 V -2.1 A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 6 Rev.2.0 SSF4953 30V Dual P-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms PD Power(W) -ID- Drain Current (A） Figure 1:Switching Test Circuit TJ-Junction Temperature(℃) TJ-Junction Temperature(℃) Figure 3 Power Dissipation -ID- Drain Current (A) Rdson On-Resistance(Ω) Figure 4 Drain Current -ID- Drain Current (A) -Vds Drain-Source Voltage (V) Figure 5 Output CHARACTERISTICS www.goodark.com Figure 6 Drain-Source On-Resistance Page 3 of 6 Rev.2.0 SSF4953 -ID- Drain Current (A) Normalized On-Resistance 30V Dual P-Channel MOSFET -Vgs Gate-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Drain-Source On-Resistance C Capacitance (pF) Rdson On-Resistance(mΩ) Figure 7 Transfer Characteristics -Vds Drain-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds -Is- Reverse Drain Current (A) -Vgs Gate-Source Voltage (V) -Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 11 Gate Charge www.goodark.com -Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward Page 4 of 6 Rev.2.0 SSF4953 -ID- Drain Current (A) 30V Dual P-Channel MOSFET Vds Drain-Source Voltage (V) Safe Operation Area r(t),Normalized Effective Transient Thermal Impedance Figure 13 Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedan www.goodark.com Page 5 of 6 Rev.2.0 SSF4953 30V Dual P-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 6 of 6 Rev.2.0