SSF4703DC 20V P-Channel MOSFET DESCRIPTION The SSF4703DC uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES Schematic Diagram ● MOSFET VDS = -20V,ID = -3.4A RDS(ON) < 160mΩ @ VGS=-1.8V RDS(ON) < 120mΩ @ VGS=-2.5V RDS(ON) < 90mΩ @ VGS=-4.5V ●SCHOTTKY VR = 20V, IF = 1A, V F<0.5V @ 0.5A ● High Power and current handing capability ● Lead free product ● Surface Mount Package Pin Assignment APPLICATIONS ●DC-DC conversion applications ●Load switch ●Power management DFN3X2-8L Bottom View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 4703DC SSF4703DC DFN3X2-8L － － － ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol MOSFET Schottky Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V ID -3.4 A IDM -15 A Drain Current-Continuous@ Current-Pulsed (Note 1) Schottky reverse voltage VR 20 V Continuous Forward Current IF 1.9 A Pulsed Forward Current IFM 7 A Maximum Power Dissipation PD 1.7 0.96 W TJ,TSTG -55 To 150 -55 To 150 ℃ Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS MOSFET Thermal Resistance, Junction-to-Ambient (Note 2) www.goodark.com RθJA Page 1 of 5 75 ℃/W Rev.2.0 SSF4703DC 20V P-Channel MOSFET Schottky Thermal Resistance, Junction-to-Ambient (Note 2) RθJA ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition ℃/W 80 Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS=0V ID=-250μA -20 V Zero Gate Voltage Drain Current IDSS V DS=-16V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V ±100 nA VGS(th) VDS=VGS,ID=-250μA -0.7 -1 V VGS=-4.5V, ID=-3.4A 73 90 VGS=-2.5V, ID=-2.5A 99 120 VGS=-1.8V, ID=-1.5A 133 160 ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance RDS(ON) g FS VDS=-5V,ID=-3.4A -0.45 4 mΩ 7 S 540 PF 70 PF DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss V DS=-10V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance C rss 50 PF Turn-on Delay Time td(on) 10 nS Turn-on Rise Time tr 12 nS 44 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time V DD=-10V,ID=-3.4A VGS=-4.5V,RGEN=3Ω td(off) Turn-Off Fall Time tf 22 nS Total Gate Charge Qg 6.1 nC Gate-Source Charge Q gs 0.6 nC Gate-Drain Charge Q gd 1.6 nC VDS=-10V,ID=-3.4A,VGS=-4.5V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD Diode Forward Current (Note 2) IS VGS=0V,IS=-1A -0.83 -1 V -2 A 0.5 V 0.1 mA SCHOTTKY PARAMETERS Forward Voltage Drop VF IF=0.5A Maximum reverse leakage current Irm VR=16V Junction Capacitance CT VR=10V 34 Schottky Reverse Recovery Time trr IF=1A, dI/dt=100A/μs 5.2 Schottky Reverse Recovery Charge Qrr IF=1A, dI/dt=100A/μs 0.8 www.goodark.com Page 2 of 5 0.39 pF 10 ns nC Rev.2.0 SSF4703DC 20V P-Channel MOSFET NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS（MOSFET） ton tr Vdd td(on) Rl Vin Vgs Rgen D toff tf td(off) 90% Vout VOUT 90% INVERTED 10% 10% G 90% VIN S 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms Figure1:Switching Test Circuit 8 10 -55 OC Vgs=5V Vgs=3V Vgs=2.5V 6 Id Drain Current(A) Id - Drain Current(A) 8 6 Vgs=2V 4 25 OC 4 2 2 125 OC Vgs=1.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 0 0.5 1 1.5 2 Vgs Gate-to-Source Voltage(V) Vds - Drain-to Source Voltage(V) Figure 3:Output Characteristics Figure 4:Transfer Characteristics 0.3 800 700 0.25 Vgs=1.8V 0.2 C - Capacitance(pF) Rdson - On-Resisitance(Ohm) 2.5 Vgs=2.5V 0.15 Vgs=4.5V 0.1 0.05 Ciss 600 500 400 300 Coss 200 100 Crss 0 0 0 2 www.goodark.com 4 6 8 Id - Drain Current(A) 10 0 Page 3 of 5 5 10 15 Vds - Drain-to-Source Voltage(V) 20 Rev.2.0 SSF4703DC 20V P-Channel MOSFET Figure 6: Capacitance ZθJA Normalized Transient Thermal Resistance Figure 5:On-Resistance vs. Drain Current Square Wave Pluse Duration(sec) Figure 7: Normalized Maximum Transient Thermal Impedanc TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS（SCHOTTKY） 10 10 0.1 If - Forward Current(A) Ir - Reverse Current(A) 1 20V 10V 0.01 Tj=150oC 1 Tj=25oC 0.001 0.0001 0 25 50 75 100 125 150 0.1 Tj - Juction Temperature(oC) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Vf - Forward Drop(V) Figure 8: Reverse Current vs. Junction Temperature www.goodark.com 0 Page 4 of 5 Figure 9: Forward Voltage Drop Rev.2.0 SSF4703DC 20V P-Channel MOSFET DFN3X2-8L PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) Top View Bottom View SYMBOL Side View COMMON DIMENSIONS(MM) MIN. NOM. MAX. A 0.70 0.75 0.80 A1 — 0.02 0.05 b 0.25 0.30 0.35 c 0.18 0.20 0.25 D 2.90 3.00 3.10 e 0.65 BCS. Nd 1.95 BCS. E L h 1.90 2.00 2.10 0.28 0.35 0.42 0.15X45° NOTES： 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 5 of 5 Rev.2.0