SSF4606 30V Complementary MOSFET DESCRIPTION The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic Diagram GENERAL FEATURES ●N-Channel VDS = 30V,ID = 6.9A R DS(ON) < 42mΩ @ VGS=4.5V R DS(ON) < 28mΩ @ VGS=10V ●P-Channel VDS = -30V,ID = -6A R DS(ON) < 58mΩ @ VGS=-4.5V R DS(ON) < 35mΩ @ VGS=-10V Marking and pin Assignment ●High Power and current handing capability ●Lead free product ●Surface Mount Package SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 4606 SSF4606 SOP-8 Ø330mm ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Tape Width Quantity 12mm 2500 units N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V 6.9 -6 6.0 -5.0 30 -30 2.0 2.0 1.44 1.44 -55 To 150 -55 To 150 N-Ch 62.5 P-Ch 62.5 Continuous Drain Current TA=25℃ ID TA=70℃ Pulsed Drain Current (Note 1) Maximum Power Dissipation IDM TA=25℃ PD TA=70℃ Operating Junction and Storage Temperature Range TJ,TSTG A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note2) RθJA ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ ℃/W Max Unit OFF CHARACTERISTICS www.goodark.com Page 1 of 4 Rev.1.0 SSF4606 30V Complementary MOSFET Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current BVDSS IDSS IGSS VGS=0V ID=250μA N-Ch 30 VGS=0V ID=-250μA P-Ch -30 VDS=24V,VGS=0V N-Ch 1 V DS=-24V,VGS=0V P-Ch -1 N-Ch ±100 P-Ch ±100 VGS=±20V,VDS=0V V μA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance VGS(th) R DS(ON) gFS V DS=VGS,ID=250μA N-Ch 1 1.9 3 VDS=VGS,ID=-250μA P-Ch -1.2 -2 -2.4 VGS=10V, ID=6.9A N-Ch 22.5 28 VGS=-10V, ID=-6.0A P-Ch 28 35 VGS=4.5V, ID=5A N-Ch 34.5 42 VGS=-4.5V, ID=-5A P-Ch 44 58 VDS=5V,ID=6.9A N-Ch VDS=-5V,ID=-6A P-Ch 13 N-Ch 680 P-Ch 900 N-Ch 100 P-Ch 200 N-Ch 77 P-Ch 120 N-Ch 4.6 P-Ch 7.7 N-Ch 4.1 P-Ch 5.7 N-Ch 20.6 P-Ch 20 N-Ch 5.2 P-Ch 9.5 N-Ch 7 P-Ch 9.6 N-Ch 1.8 P-Ch 2.5 N-Ch 3.2 P-Ch 4.5 10 V mΩ 15.4 S DYNAMIC PARAMETERS Input Capacitance Output Capacitance Clss N-Ch VGS=0V, VDS=15V, f=1MHz Coss P-Ch VGS=0V, VDS=-15V, f=1MHz Reverse Transfer Capacitance Crss pF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge www.goodark.com td(on) tr td(off) N-Ch V DD=15V, RL=2.2Ω VGEN=10V,RGEN=3Ω P-Ch VDD=-15V, RL=2.7Ω VGEN=-10V,RGEN=3Ω tf Qg Qgs Qgd N-Ch VDS=15V,ID=6.9A, VGS=4.5V P-Ch VDS=-15V,ID=-6A, VGS=-4.5V Page 2 of 4 nS nS nS nS nC nC nC Rev.1.0 SSF4606 30V Complementary MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1A N-Ch 0.76 1 V VGS=0V,IS=-1A P-Ch -0.77 -1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. r(t),Normalized Effective Transient Thermal Impedance N-Channel THERMAL CHARACTERISTICS Square Wave Pluse Duration(sec) Figure 1: Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance P-Channel THERMAL CHARACTERISTICS Square Wave Pluse Duration(sec) Figure 2: Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.0 SSF4606 30V Complementary MOSFET SOP-8 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact www.goodark.com Page 4 of 4 Rev.1.0