SSF4604 30V Complementary MOSFET DESCRIPTION The SSF4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic Diagram GENERAL FEATURES D1 D1 D2 D2 ●N-Channel 8 VDS = 30V,ID = 6.9A RDS(ON) < 44mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=10V ●P-Channel VDS = -30V,ID = -5A RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 52mΩ @ VGS=-10V 7 6 5 4604 1 2 3 4 S1 G1 S2 G2 Marking and Pin Assignment ●High Power and current handing capability ●Lead free product ●Surface Mount Package SOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size 4604 SSF4604 SOP-8 Ø330mm ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Tape Width Quantity 12mm 2500 units N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V 6.9 -5 6.0 -4.0 30 -20 2.0 2.0 1.35 1.44 -55 To 150 -55 To 150 N-Ch 62.5 P-Ch 62.5 Continuous Drain Current TA=25℃ ID TA=70℃ Pulsed Drain Current (Note 1) Maximum Power Dissipation IDM TA=25℃ PD TA=70℃ Operating Junction and Storage Temperature Range TJ,TSTG A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note2) RθJA ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition OFF CHARACTERISTICS www.goodark.com Page 1 of 4 Min Typ ℃/W Max Rev.1.0 Unit SSF4604 30V Complementary MOSFET Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VGS=0V ID=250μA N-Ch 30 VGS=0V ID=-250μA P-Ch -30 VDS=24V,VGS=0V N-Ch 1 VDS=-24V,VGS=0V P-Ch -1 N-Ch ±100 P-Ch ±100 VGS=±20V,V DS=0V V μA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance V GS(th) RDS(ON) gFS VDS=VGS,ID=250μA N-Ch 1 1.9 3 VDS=VGS,ID=-250μA P-Ch -1 -1.8 -3 VGS=10V, ID=6.9A N-Ch 22.5 28 VGS=-10V, ID=-5.0A P-Ch 46 52 V GS=4.5V, ID=5A N-Ch 40 44 VGS=-4.5V, ID=-4A P-Ch 65 87 V DS=5V,ID=6.9A N-Ch 10 15.4 VDS=-5V,ID=-5A P-Ch 6 8.6 V mΩ S DYNAMIC PARAMETERS Input Capacitance Clss N-Ch VGS=0V, VDS=15V, f=1MHz Output Capacitance Coss P-Ch VGS=0V, VDS=-15V, f=1MHz Reverse Transfer Capacitance Crss N-Ch 680 P-Ch 700 N-Ch 100 P-Ch 120 N-Ch 77 P-Ch 75 N-Ch 4.6 P-Ch 8.3 N-Ch 4.1 P-Ch 5 N-Ch 20.6 P-Ch 29 N-Ch 5.2 P-Ch 14 N-Ch 14 P-Ch 14.5 N-Ch 1.8 P-Ch 2 N-Ch 3.2 P-Ch 3.8 pF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge www.goodark.com Qgd N-Ch VDD=15V, RL=2.2Ω V GEN=10V,RGEN=3Ω P-Ch VDD=-15V, RL=3Ω VGEN=-10V,RGEN=3Ω N-Ch VDS=15V,ID=6.9A, VGS=10V P-Ch VDS=-15V,ID=-5A, VGS=-10V Page 2 of 4 nS nS nS nS nC nC nC Rev.1.0 SSF4604 30V Complementary MOSFET DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1A N-Ch 0.76 1 V VGS=0V,IS=-1A P-Ch -0.77 -1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. r(t),Normalized Effective Transient Thermal Impedance N-Channel THERMAL CHARACTERISTICS Square Wave Pluse Duration(sec) Figure 1: Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance P-Channel THERMAL CHARACTERISTICS Square Wave Pluse Duration(sec) Figure 2: Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.0 SSF4604 30V Complementary MOSFET SOP-8 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact www.goodark.com Page 4 of 4 Rev.1.0