SSF3610E
25V N-Chanel MOSFET
Main Product Characteristics
VDSS
25 V
RDS(on)
6.8 mΩ(typ.)
ID
18A
SSF3610E
SOP-8
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
18
IDM
Pulsed Drain Current②
72
PD @TC = 25°C
Power Dissipation③
3.1
W
VDS
Drain-Source Voltage
25
V
VGS
Gate-to-Source Voltage
± 12
V
-55 to +150
°C
TJ
TSTG
Operating Junction and Storage Temperature Range
A
Thermal Resistance
Symbol
Characteristics
RθJA
Junction-to-ambient (t ≤ 10s) ④
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Page 1 of 6
Typ.
Max.
Units
—
40
℃/W
Rev.2.1
SSF3610E
25V N-Chanel MOSFET
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
unless otherwise specified
Min.
Typ.
Max.
Units
25
—
—
V
—
6.8
10
—
7.6
12
—
10.4
14
Conditions
VGS = 0V, ID = 250μA
VGS =10V, ID =5A
mΩ
VGS =8V, ID =6A
VGS =4.5V, ID =4A
VGS(th)
Gate threshold voltage
1
1.3
2.5
V
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source leakage current
—
—
1
μA
VDS = 25V,VGS = 0V
IGSS
Gate-to-Source forward leakage
—
—
10
—
—
-10
Qg
Total gate charge
—
15.4
—
Qgs
Gate-to-Source charge
—
3.6
—
Qgd
Gate-to-Drain("Miller") charge
—
5.8
—
td(on)
Turn-on delay time
—
6.6
—
tr
Rise time
—
4.6
—
td(off)
Turn-Off delay time
—
33.0
—
tf
Fall time
—
20.3
—
Ciss
Input capacitance
—
1260
—
Coss
Output capacitance
—
353
—
Crss
Reverse transfer capacitance
—
295
—
μA
VGS = 10V
VGS = -10V
ID = 4A,
nC
VDS=10V,
VGS = 4.5V
VGS=10V, VDS=10V,
ns
RL=10Ω,
RGEN=3Ω
VGS = 0V
pF
VDS = 10V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
18
A
—
—
72
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
0.75
0.9
V
IS=1.7A, VGS=0V
trr
Reverse Recovery Time
—
10.5
—
ns
TJ = 25°C, IF =15A,
Qrr
Reverse Recovery Charge
—
2.6
—
uC
di/dt = 100A/μs
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Page 2 of 6
Rev.2.1
SSF3610E
25V N-Chanel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-ambient thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
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Page 3 of 6
Rev.2.1
SSF3610E
25V N-Chanel MOSFET
Typical Electrical and Thermal Characteristics
Figure 1.Typical Output Characteristics
Figure 2. Typical Capacitance Vs. Drain-to-Source Voltage
Figure3. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 4 of 6
Rev.2.1
SSF3610E
25V N-Chanel MOSFET
Mechanical Data
SOP-8 PACKAGE OUTLINE DIMENSION
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Page 5 of 6
Rev.2.1
SSF3610E
25V N-Chanel MOSFET
Ordering and Marking Information
Device Marking: SSF3610E
Package (Available)
SOP-8
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tape
Tapes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
SOP-8
2500
2
5000
40000
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
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8
Duration
Sample Size
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Page 6 of 6
Rev.2.1