SSF3338 30V N-Channel MOSFET D DESCRIPTION The SSF3338 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID =4A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 47mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●PWM applications ●Load switch ●Power management SOT-23 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 3338 SSF3338 SOT-23 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±20 V ID(25℃) 4 A ID(70℃) 3.5 A IDM 20 A PD 1.25 W TJ,TSTG -55 To 150 ℃ R θJA 130 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage www.goodark.com BVDSS VGS=0V ID=250μA Page 1 of 4 30 V Rev.1.0 SSF3338 30V N-Channel MOSFET Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 0.5 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) V DS=VGS,ID=250μA 1.5 3.0 V Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=2.8A 41 65 mΩ VGS=10V, ID=3.5A 30 47 mΩ VDS=5V,ID=2.5A 7 S 310 PF 60 PF ON CHARACTERISTICS (Note 3) Forward Transconductance g FS 1.0 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss V DS=15V,VGS=0V, F=1.0MHz Output Capacitance C oss Reverse Transfer Capacitance C rss 30 PF Turn-on Delay Time td(on) 7 nS Turn-on Rise Time tr 12 nS 15 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time VDS=15V,VGS=10V,RGEN=6Ω ID=1A td(off) Turn-Off Fall Time tf 5 nS Total Gate Charge Qg 6 nC Gate-Source Charge Qgs 2 nC Gate-Drain Charge Qgd 1 nC V DS=15V,ID=2.5A,VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD VGS=0V,IS=1.25A 0.8 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.0 SSF3338 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen td(on) Rl Vin D ton tr Vout 90% VOUT G toff tf td(off) 90% INVERTED 10% 10% 90% S VIN 50% 50% 10% PULSE WIDTH Figure 1: Switching Test Circuit ZthJA Normalized Transient Thermal Resistance Figure 2:Switching Waveforms Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.0 SSF3338 30V N-Channel MOSFET SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° NOTES： 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.0