SSF2816EB 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.5V Schematic Diagram ESD Rating：2500V HBM ● High Power and current handling capability ● Lead free product ● Surface Mount Package Marking and Pin Assignment APPLICATIONS ●Battery protection ●Load switch ●Power management TSSOP-8 Top View PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSF2816EB SSF2816EB TSSOP-8 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±12 V ID 7 A IDM 25 A PD 1.5 W TJ,TSTG -55 To 150 ℃ R θJA 83 ℃/W Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) www.goodark.com Page 1 of 4 Rev.1.1 SSF2816EB 20V Dual N-Channel MOSFET ELECTRICAL CHARACTERISTICS (T A=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±4.5V,VDS=0V ±200 nA VGS=±10V,VDS=0V ±10 uA 0.75 1.2 V VGS=4.5V, ID=6.5A 16.5 22 mΩ VGS=4V, ID=6A 17 23 mΩ VGS=3.1V, ID=5.5A 19 26 mΩ VGS=2.5V, ID=5.5A 22 30 mΩ VDS=10V,ID=6.5A 6.6 S 600 PF 330 PF PF ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance VGS(th) RDS(ON) gFS VDS=VGS,ID=250μA 0.6 DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss V DS=8V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 140 Turn-on Delay Time td(on) 10 20 nS Turn-on Rise Time tr 11 25 nS 35 70 nS 30 60 nS 10 15 nC SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω V DS=10V,ID=7A, VGS=4.5V 2.3 nC 3 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=1.5A 0.84 1.2 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. www.goodark.com Page 2 of 4 Rev.1.1 V SSF2816EB 20V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Rl Vin Vgs Rgen D Vout G S Figure 2:Switching Waveform r(t),Normalized Effective Transient Thermal Impedance Figure 1:Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3 Normalized Maximum Transient Thermal Impedance www.goodark.com Page 3 of 4 Rev.1.1 SSF2816EB 20V Dual N-Channel MOSFET TSSOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 4 Rev.1.1