SSF2816E
20V Dual N-Channel MOSFET
Main Product Characteristics
VDSS
20V
RDS(on) 16.5mohm(typ.)
ID
7A
TSSOP-8
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
2KV ESD Protected
Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
7
IDM
Pulsed Drain Current②
25
PD @TC = 25°C
Power Dissipation③
1.5
W
VDS
Drain-Source Voltage
20
V
VGS
Gate-to-Source Voltage
± 12
V
-55 to +150
°C
TJ
TSTG
Operating Junction and Storage Temperature Range
A
Thermal Resistance
Symbol
Characteristics
RθJA
Junction-to-ambient (t ≤ 10s) ④
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Page 1 of 6
Typ.
Max.
Units
—
83
℃/W
Rev.1.2
SSF2816E
20V Dual N-Channel MOSFET
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
unless otherwise specified
Min.
Typ.
Max.
Units
20
—
—
V
—
16.5
22
—
17
23
—
19
26
—
22
30
Conditions
VGS = 0V, ID = 250μA
VGS=4.5V,ID = 6.5A
mΩ
VGS=4V,ID = 6A
VGS=3.1V,ID = 5.5A
VGS=2.5V,ID = 5.5A
VGS(th)
Gate threshold voltage
0.6
0.75
1.2
V
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source leakage current
—
—
1
μA
VDS = 20V,VGS = 0V
IGSS
Gate-to-Source forward leakage
—
—
±200
nA
VGS=±4.5V,VDS=0V
—
—
±10
uA
VGS=±10V,VDS=0V
gFS
Forward Transconductance
—
6.6
—
S
VDS=10V,ID=6.5A
Qg
Total gate charge
—
10
15
Qgs
Gate-to-Source charge
—
2.3
—
Qgd
Gate-to-Drain("Miller") charge
—
3
—
td(on)
Turn-on delay time
—
10
20
tr
Rise time
—
11
25
td(off)
Turn-Off delay time
—
35
70
tf
Fall time
—
30
60
Ciss
Input capacitance
—
600
—
Coss
Output capacitance
—
330
—
Crss
Reverse transfer capacitance
—
140
—
VDS=10V,
nC
ID=7A,
VGS=4.5V
ns
VDD=10V,ID=1A
VGS=4.5V,RGEN=6Ω
VGS = 0V
pF
VDS = 8V
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
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Min.
Typ.
Max.
Units
—
—
7
A
—
—
25
A
—
0.84
1.2
V
Page 2 of 6
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=1.5A, VGS=0V
Rev.1.2
SSF2816E
20V Dual N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
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Page 3 of 6
Rev.1.2
SSF2816E
20V Dual N-Channel MOSFET
r(t),Normalized Effective
Transient Thermal Impedance
Typical Electrical and Thermal Characteristics
Square Wave Pluse Duration(sec)
Figure 1 Normalized Maximum Transient Thermal Impedance
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Page 4 of 6
Rev.1.2
SSF2816E
20V Dual N-Channel MOSFET
Mechanical Data
Symbol
D
E
b
c
E1
A
A2
A1
e
L
H
θ
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Dimension In Millimeters
Min
Max
2.800
3.200
6.200
6.600
0.210
0.280
0.130
0.190
4.200
4.600
1.200
0.850
1.150
0.050
0.150
0.65 (BSC)
0.450
0.750
0.25 TYP
10
80
Page 5 of 6
Dimension In Inches
Min
Max
0.110
0.126
0.244
0.260
0.008
0.011
0.005
0.007
0.165
0.181
0.047
0.033
0.045
0.002
0.006
0.026 (BSC)
0.018
0.030
0.01 TYP
10
80
Rev.1.2
SSF2816E
20V Dual N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF2816E
Package (Available)
TSSOP-8
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
TSSOP-8
Units/
Tape
3000
Tapes/
Inner Box
2
Units/
Inner Box
6000
Inner Boxes/
Carton Box
8
Units/
Carton Box
48000
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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Page 6 of 6
Rev.1.2