SSF2418E
20V Dual N-Channel MOSFET
Main Product Characteristics
VDSS
20V
RDS(on)
18mohm(typ.)
ID
6A
SOT23-6
Features and Benefits
Marking and Pin
Schematic Diagram
Assignment
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
6
IDM
Pulsed Drain Current②
30
PD @TC = 25°C
Power Dissipation③
1.3
W
VDS
Drain-Source Voltage
20
V
VGS
Gate-to-Source Voltage
± 12
V
ESD
ESD Rating (HBM)
2
KV
TJ
Operating Junction and Storage Temperature Range
-55 to +150
°C
TSTG
A
Thermal Resistance
Symbol
Characteristics
RθJA
Junction-to-ambient (t ≤ 10s) ④
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Page 1 of 6
Typ.
Max.
Units
—
95
℃/W
Rev.1.4
SSF2418E
20V Dual N-Channel MOSFET
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
unless otherwise specified
Min.
Typ.
Max.
Units
20
—
—
V
—
18
21
—
19
22
—
21
26
—
25
30
Conditions
VGS = 0V, ID = 250μA
VGS=4.5V,ID = 6A
mΩ
VGS=4V,ID = 5.5A
VGS=3.1V,ID = 5A
VGS=2.5V,ID = 4A
VGS(th)
Gate threshold voltage
0.5
—
1
V
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source leakage current
—
—
1
μA
VDS = 20V,VGS = 0V
IGSS
Gate-to-Source forward leakage
—
—
10
-10
—
—
gFS
Forward Transconductance
—
7
—
Qg
Total gate charge
—
8
—
Qgs
Gate-to-Source charge
—
1.5
—
Qgd
Gate-to-Drain("Miller") charge
—
2
—
td(on)
Turn-on delay time
—
20
—
tr
Rise time
—
50
—
td(off)
Turn-Off delay time
—
64
—
tf
Fall time
—
40
—
Ciss
Input capacitance
—
650
—
Coss
Output capacitance
—
170
—
Crss
Reverse transfer capacitance
—
150
—
μA
S
VGS =10V
VGS = -10V
VDS=5V,ID=6A
VDS=10V,
nC
ID=6A,
VGS=4.5V
ns
VDD=10V,ID=1A
VGS=4.5V,RGEN=10Ω
VGS = 0V
pF
VDS = 10V
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
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Min.
Typ.
Max.
Units
—
—
6
A
—
—
30
A
—
0.76
1.1
V
Page 2 of 6
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=1A, VGS=0V
Rev.1.0
SSF2418E
20V Dual N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
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Page 3 of 6
Rev.1.0
SSF2418E
20V Dual N-Channel MOSFET
r(t),Normalized Effective
Transient Thermal Impedance
Typical Electrical and Thermal Characteristics
Square Wave Pluse Duration(sec)
Figure 1 Normalized Maximum Transient Thermal Impedance
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
⑥ The maximum current rating is limited by bond-wires.
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Page 4 of 6
Rev.1.0
SSF2418E
20V Dual N-Channel MOSFET
Mechanical Data
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
θ
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Dimension In Millimeters
Min
Max
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
1.500
1.700
2.650
2.950
0.95(BSC)
1.800
2.000
0.300
0.600
00
80
Page 5 of 6
Dimension In Inches
Min
Max
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
00
80
Rev.1.0
SSF2418E
20V Dual N-Channel MOSFET
Ordering and Marking Information
Device Marking: 2418E
Package (Available)
SOT23-6
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
SOT23-6
Units/
Tape
3000
Tapes/
Inner Box
10
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
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Units/
Inner Box
30000
Inner Boxes/
Carton Box
4
Duration
Sample Size
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Page 6 of 6
Units/
Carton Box
120000
Rev.1.0