SSF22A5E 20V N-Channel MOSFET Main Product Characteristics: VDSS 20V RDS(on) 3Ω ID 238mA Pin Assignment Schematic Diagram Features and Benefits: Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Lead free product 150℃ operating temperature Description: It utilizes the latest trench processing techniques to achieve fast switching speed and short reverse recovery time. These features combine to make this design an extremely efficient and reliable device for use in Power Management Load Switch, Level Shift, Cell Phones, Media Players, Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc. Absolute Max Rating @TA=25℃ unless otherwise specified Symbol Parameter Max. Units ID Continuous Drain Current ① 238 IDM Pulsed Drain Current (tp≤10μs) ② 714 PD Power Dissipation ③ 300 mW VDS Drain-Source Voltage 20 V VGS Gate-to-Source Voltage ± 10 V TJ TSTG Operating Junction and Storage Temperature Range -55 to 150 TL Lead Temperature for Soldering Purposes 260 ISD Continuous Source Current (Body Diode) 238 mA °C mA Thermal Resistance Symbol Characterizes Value Unit RθJA Junction-to-Ambient (steady-state) ④ 416 ℃/W www.goodark.com Page 1 of 5 Rev.1.0 SSF22A5E 20V N-Channel MOSFET Electrical Characteristics @TA=25℃ unless otherwise specified Symbol BVDSS RDS(on) VGS(th) IDSS Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward IGSS leakage Gate-to-Source reverse leakage Min. Typ. Max. Units 20 — — V — 1.5 3.0 2.2 3.5 0.5 1.0 1.5 V — — 1.0 μA — — 100 VGS = 2.5V, ID = 10mA VDS = 3V, ID = 100μA VDS = 20V, VGS = 0V VGS =10V μA -100 — — — 50 — td(on) Turn-on delay time — 13 — tr Rise time — 15 — td(off) Turn-Off delay time — 98 — tf Fall time — 60 — Ciss Input capacitance — 11.5 20 Coss Output capacitance — 10 15 — 3.5 6.0 capacitance ID = 100μA VGS = 4.5V, ID = 10mA — Forward Transconductance Crss VGS = 0V, Ω gFS Reverse transfer Conditions VGS = -10V mS ns ID = 10mA,VDS=3V VGS=4.5V, VDS=5V, ID=10mA, RG=10Ω VGS = 0V, pF VDS =5V, ƒ = 1.0MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions VSD Diode Forward Voltage — 0.66 0.8 V IS=10mA, VGS=0V Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C www.goodark.com Page 2 of 5 Rev.1.0 SSF22A5E 20V N-Channel MOSFET Typical Electrical and Thermal Characteristics www.goodark.com Page 3 of 5 Rev.1.0 SSF22A5E 20V N-Channel MOSFET Typical Electrical and Thermal Characteristics Test Circuits and Waveforms Switch Waveforms: www.goodark.com Page 4 of 5 Rev.1.0 SSF22A5E 20V N-Channel MOSFET Mechanical Data(SC-89)： www.goodark.com Page 5 of 5 Rev.1.0