SSF2145CH6 20V Complementary MOSFET Main Product Characteristics P-Ch 20V -20V 2145C VDSS N-Ch RDS(on)(typ.) 38mohm 64mohm ID 4.8A Marking and Pin TSOP-6 2.9A Schematic Diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for load switching and buttery protection applications 150℃ operating temperature Lead free product Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in load switching and a wide variety of other applications. Absolute Max Rating Symbol Max. Parameter N-channel P-channel Units ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V① 4.8 -2.9 ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V① 3.9 -2.4 IDM Pulsed Drain Current② 17 -11 PD @TC = 25°C Power Dissipation③ 1.7 1.7 W VDS Drain-Source Voltage 20 -20 V VGS Gate-to-Source Voltage ±8 ±8 V -55 to + 150 -55 to + 150 °C TJ TSTG Operating Junction and Storage Temperature Range A Thermal Resistance Symbol Characteristics Typ. Junction-to-ambient (t ≤ 10s) ④ www.goodark.com — Page 1 of 5 Max. N-channel P-channel 76 114 Units ℃/W Rev.1.0 SSF2145CH6 20V Complementary MOSFET Junction-to-Ambient (PCB mounted, steady-state) ④ Electrical Characteristics @TA=25℃ Symbol V(BR)DSS Parameter IDSS IGSS unless otherwise specified 20 — — 22 — — -20 — — -22 — — TJ = 125°C N-channel — 38 55 VGS=4.5V,ID = 3.6A P-channel — 68 80 N-channel — 64 75 P-channel — 89 100 N-channel 0.4 0.72 1 Gate threshold P-channel 0.4 0.56 1 voltage N-channel -0.4 -0.78 -1 VDS = VGS, ID = -250μA P-channel -0.4 -0.66 -1 TJ = 125°C Drain-to-Source N-channel — — 1 leakage current P-channel — — -1 N-channel — — 100 Gate-to-Source N-channel — — -100 forward leakage P-channel — — 100 P-channel — — -100 Drain-to-Source breakdown voltage Drain-to-Source N-channel P-channel Max. Ciss Input capacitance N-channel — 348 420 Coss Output capacitance N-channel — 58 70 Reverse transfer N-channel — 32 39 Crss capacitance Ciss Input capacitance P-channel — 519 622 Coss Output capacitance P-channel — 75 90 Reverse transfer P-channel — 58 70 Crss ℃/W 53 Typ. on-resistance VGS(th) 53 Min. Static RDS(on) — capacitance Units Conditions VGS = 0V, ID = 250μA V mΩ TJ = 125°C VGS = 0V, ID = -250μA VGS=-4.5V,ID = -3A VGS=2.5V,ID = 3.1A VGS=-3.5V,ID = -2A VDS = VGS, ID = 250μA V μA TJ = 125°C VDS = 20V,VGS = 0V VDS = -20V,VGS = 0V VGS =8V nA VGS = -8V VGS =8V VGS = -8V VGS = 0V, VDS = 10V, pF ƒ = 1.0MHz VGS = 0V, VDS = -10V, ƒ = 1.0MHz Source-Drain Ratings and Characteristics Symbol Parameter Continuous Source IS Max. — — 4.8 Current P-channel — — -2.9 N-channel — — 17 — — -11 — 0.69 1.2 P-channel (Body Diode) Diode www.goodark.com Units Forward N-channel Conditions MOSFET symbol A Pulsed Source VSD Typ. Current (Body Diode) ISM N-channel Min. showing the integral reverse p-n junction diode. A Page 2 of 5 V IS=0.94A, VGS=0V Rev.1.0 SSF2145CH6 20V Complementary MOSFET Voltage P-channel — -0.72 -1.2 IS=-0.75A, VGS=0V Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to- ambient thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C www.goodark.com Page 3 of 5 Rev.1.0 SSF2145CH6 20V Complementary MOSFET Mechanical Data SYMBOL A A1 b c D E E1 e L Millimeters MIN MAX 0.90 1.10 0.10 0.30 0.50 0.08 0.20 2.70 3.10 2.60 3.00 1.40 1.80 0.95 BSC 0.35 0.55 Notes： ① Dimensions are inclusive of plating ② Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils ③ Dimension L is measured in gauge plane. ④ Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 5 Rev.1.0 SSF2145CH6 20V Complementary MOSFET Ordering and Marking Information Device Marking: 2145C Package (Available) TSOP-6 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type TSOP-6 Units/ Tube 3000pcs Tubes/ Inner Box 10pcs Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) www.goodark.com Units/ Inner Box 30000pcs Inner Boxes/ Carton Box 4pcs Duration Sample Size Tj=125℃ or 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=125℃ or 150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices Page 5 of 5 Units/ Carton Box 120000pcs Rev.1.0