SSF2129H3
20V Dual P-Channel MOSFET
Main Product Characteristics
VDSS
-20V
RDS(on)
21mΩ (typ.)
ID
-6.0A
D1
S1
Features and Benefits
G2
G1
SOP-8
D2
Marking and Pin
S2
Schematic Diagram
Assignment
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
-6
IDM
Pulsed Drain Current②
-24
Power Dissipation③
2.0
W
Linear Derating Factor
0.016
W/°C
VDS
Drain-Source Voltage
-20
V
VGS
Gate-to-Source Voltage
±8
V
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
A
Thermal Resistance
Symbol
Characteristics
RθJC
RθJA
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Typ.
Max.
Units
Junction-to-case③
—
40
℃/W
Junction-to-ambient (t ≤ 10s) ④
—
78
℃/W
Page 1 of 6
Rev.1.0
SSF2129H3
20V Dual P-Channel MOSFET
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
unless otherwise specified
Min.
Typ.
Max.
Units
-20
—
—
V
—
21
30
mΩ
VGS=-4.5V,ID = -6A
—
33
40
mΩ
VGS=-2.5V,ID = -5.3A
-0.4
—
-1.5
V
—
—
1
—
—
50
—
—
100
—
—
-100
Total gate charge
—
24
—
Qgs
Gate-to-Source charge
—
4.2
—
Qgd
Gate-to-Drain("Miller") charge
—
5.6
—
td(on)
Turn-on delay time
—
8.1
—
tr
Rise time
—
15.2
—
td(off)
Turn-Off delay time
—
98
—
tf
Fall time
—
35
—
Ciss
Input capacitance
—
2819
—
Coss
Output capacitance
—
262
—
Crss
Reverse transfer capacitance
—
196
—
μA
Conditions
VGS = 0V, ID = -250μA
VDS = VGS, ID = -250μA
VDS = -20V,VGS = 0V
TJ = 125℃
nA
VGS =8V
VGS = -8V
ID = -6A,
nC
VDS=-10V,
VGS =-5V
VGS=-4.5V, VDS=-10V,
ns
ID = -1A,
RGEN=6Ω
VGS = 0V
pF
VDS = -10V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
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Min.
Typ.
Max.
Units
—
—
-6
A
—
—
-24
A
—
—
-1.0
V
Page 2 of 6
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
IS=-2.9A, VGS=0V
Rev.1.0
S
SSF2129H3
20V Dual P-Channel MOSFET
Test Circuits and Waveforms
EAS test circuit:
Switching time test circuit:
Gate charge test circuit:
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max junction temperature.
③The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
④These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
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Page 3 of 6
Rev.1.0
SSF2129H3
20V Dual P-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 1. Maximum Drain Current Vs. Case
Figure 2.Typical Capacitance Vs. Drain-to-Source
Temperature
Voltage
Figure3. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Page 4 of 6
Rev.1.0
SSF2129H3
20V Dual P-Channel MOSFET
Mechanical Data
SOP8 PACKAGE OUTLINE DIMENSION
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Page 5 of 6
Rev.1.0
SSF2129H3
20V Dual P-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF2129H3
Package (Available)
SOP-8
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
SOP-8
2500
2
5000
40000
8
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ or 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=125℃ or 150℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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Page 6 of 6
Rev.1.0