SSF1090
100V N-Channel MOSFET
FEATURES
ID =15A
Advanced trench process technology
Special designed for Convertors and power controls
High density cell design for ultra low R DS (ON)
Fully characterized Avalanche voltage and current
Avalanche Energy 100% test
Lead free product
BV=100V
R DS (ON) =0.06Ω (Typ.)
DESCRIPTION
The SSF1090 is a new generation of high voltage and low current
N–Channel enhancement mode trench power MOSFET. This new
technology increases the device reliability and electrical parameter
repeatability. SSF1090 is assembled in high reliability and qualified
assembly house.
APPLICATIONS
Power switching application
SSF1090 Top View (TO-220)
Absolute Maximum Ratings
Parameter
Max.
Continuous drain current,VGS@10V
15
ID@Tc=100ْC Continuous drain current,VGS@10V
10
ID@Tc=25ْ C
Units
A
Pulsed drain current ①
60
Power dissipation
42
W
Linear derating factor
0.4
W/ْ C
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
240
mJ
EAR
Repetitive avalanche energy
TBD
mJ
dv/dt
Peak diode recovery voltage
28
v/ns
–55 to +175
ْC
IDM
PD@TC=25ْC
TJ
TSTG
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
3.6
—
RθJA
Junction-to-ambient
—
—
69
Units
C/W
*When mounted on the minimum pas size recommended（PCB Mount）
Electrical Characteristics @T J=25 ْC (unless otherwise specified)
Parameter
Min. Typ.
Max. Units
Test Conditions
BVDSS Drain-to-Source breakdown voltage
100
—
—
V
VGS=0V,ID=250μA
RDS(on) Static Drain-to-Source on-resistance
—
0.06
0.09
Ω
VGS=10V,ID=2A
VGS(th) Gate threshold voltage
2.0
—
4.0
V
VDS=VGS,ID=250μA
—
—
1
—
—
10
—
—
100
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
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Page 1 of 5
μA
nA
VDS=30V,VGS=0V
VDS=100V, VGS=0V,TJ=150ْC
VGS=20V
Rev.2.1
SSF1090
100V N-Channel MOSFET
Gate-to-Source reverse leakage
—
—
Qg
Total gate charge
—
21.18
Qgs
Gate-to-Source charge
—
4.7
—
Qgd
Gate-to-Drain("Miller") charge
—
8.5
—
td(on)
Turn-on delay time
—
10
Rise time
—
9.5
Turn-Off delay time
—
18.3
Fall time
—
4.2
Ciss
Input capacitance
—
697
750
Coss
Output capacitance
—
59
110
Crss
Reverse transfer capacitance
—
43
45
tr
td(off)
tf
-100
VGS=-20V
nC
ID=9.2A,VGS=10V
VDD=80V,RL=8.6Ω
VDD=50V
nS
ID=9.2A ,RL=5.4Ω
RG=18Ω
VGS=10V
VGS=0V
pF
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous
Source
Current
(Body Diode)
Pulsed
Source
Current
(Body Diode) ①
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr Reverse Recovery Charge
ton
Forward Turn-on Time
Min.
Typ.
Max.
—
—
3
Units
Test Conditions
MOSFET symbol
A
showing the
integral reverse
—
—
18
—
—
1.3
V
TJ=25ْC,IS=3A,VGS=0V ③
—
35
—
nS
TJ=25ْC,IF=9.2A
—
67.2
—
μC
di/dt=100A/μs ③
p-n junction diode.
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =30mH, VDD = 50V, Id=4A.
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
EAS Test Circuit
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Gate Charge Test Circuit
Page 2 of 5
Rev.2.1
SSF1090
100V N-Channel MOSFET
Switch Time Test Circuit
Switch Waveform
Gate Charge
Source-Drain Diode Forward Voltage
On Resistance vs. Junction Temperature
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Breakdown Voltage vs. Junction Temperature
Page 3 of 5
Rev.2.1
SSF1090
100V N-Channel MOSFET
Safe Operation Area
Max Drain Current vs. Junction Temperature
Transient Thermal Impedance Curve
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Page 4 of 5
Rev.2.1
SSF1090
100V N-Channel MOSFET
TO220 MECHANICAL DATA
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Page 5 of 5
Rev.2.1