SSF1030B
100V N-Channel MOSFET
FEATURES
Advanced trench process technology
Ultra low Rdson, typical 25mohm
ID =7A
High avalanche energy, 100% test
BV=100V
Fully characterized avalanche voltage and current
R DS (ON) =25mΩ（typ.）
Lead free product
DESCRIPTION
The SSF1030B is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1030B is
assembled in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
SOP-8 Top View
Marking and Pin Assignment
Absolute Maximum Ratings
Parameter
ID@Tc=25ْ C
Max.
Continuous drain current,VGS@10V
7
ID@Tc=100ْC Continuous drain current,VGS@10V
IDM
Units
A
5.0
Pulsed drain current ①
30
PD@TC=25ْC Power dissipation
8.8
W
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
33
mJ
EAR
Repetitive avalanche energy
TJ
TSTG
TBD
Operating Junction and
–55 to +175
Storage Temperature Range
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
17
—
RθJA
Junction-to-ambient
—
—
85
Units
ْC/W
Electrical Characteristics @T J=25 ْC(unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Test Conditions
BVDSS
Drain-to-Source breakdown voltage
100
—
—
V
VGS=0V,ID=250μA
RDS(on)
Static Drain-to-Source on-resistance
—
25
30
mΩ
VGS=10V,ID=10A
VGS(th)
Gate threshold voltage
2.0
3.1
4.0
V
VDS=VGS,ID=250μA
Forward transconductance
—
25
—
S
VDS=15V,ID=6.9A
—
—
1
—
—
10
—
—
100
gfs
IDSS
IGSS
Drain-to-Source leakage current
Gate-to-Source forward leakage
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Page 1 of 4
VDS=100V,VGS=0V
μA
VDS=100V,
VGS=0V,TJ=150ْC
nA
VGS=20V
Rev.1.1
SSF1030B
100V N-Channel MOSFET
Qg
Gate-to-Source reverse leakage
—
—
-100
Total gate charge
—
42
—
ID=6.9A
VDD=30V
VGS=-20V
nC
Qgs
Gate-to-Source charge
—
15
—
Qgd
Gate-to-Drain("Miller") charge
—
14.6
—
VGS=10V
td(on)
Turn-on delay time
—
14.2
—
VDD=30V
Rise time
—
40
—
Turn-Off delay time
—
7.3
—
Fall time
—
14.8
—
VGS=10V
Ciss
Input capacitance
—
190
—
VGS=0V
Coss
Output capacitance
—
135
—
Crss
Reverse transfer capacitance
—
4.2
—
tr
td(off)
tf
ID=2A ,RL=15Ω
nS
RG=2.5Ω
VDS=25V
pF
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ①
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr Reverse Recovery Charge
ton
.
Forward Turn-on Time
.
Min.
Typ.
Max.
—
—
7
Units
Test Conditions
MOSFET symbol
A
showing the
integral reverse
—
—
30
—
—
1.3
V
TJ=25ْC,IS=30A,VGS=0V ③
－
57
—
nS
TJ=25ْC,IF=3.1A
－
107
—
nC
di/dt=100A/μs ③
p-n junction diode.
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, ID = 15A, VDD = 50V.
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C.
EAS test circuit
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Gate charge test circuit
Page 2 of 4
Rev.1.1
SSF1030B
100V N-Channel MOSFET
Switch Waveforms
Thermal Resistance
ZthJA Normalized Transient
Switch Time Test Circuit
Transient Thermal Impedance Curve
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Page 3 of 4
Rev.1.1
SSF1030B
100V N-Channel MOSFET
SOP-8 PACKAGE INFORMATION
NOTES：
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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Page 4 of 4
Rev.1.1