SSF1007
100V N-Channel MOSFET
Main Product Characteristics
VDSS
100V（Typ）
RDS(on)
6mohm（Typ）
ID
130A
Features and Benefits
SSF1007 Top View (TO-220)
Advanced trench MOSFET process technology
Special designed for convertors and power controls
Ultra low on-resistance
150℃ operating temperature
High Avalanche capability and 100% tested
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an
extremely efficient and reliable device for use in power switching application and a wide variety of other
applications.
Absolute Max Rating
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
130
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
91
IDM
Pulsed Drain Current②
520
ISM
Pulsed Source Current.(Body Diode)
258
Power Dissipation③
1.7
W
Linear derating factor
± 20
W/ Cْ
VDS
Drain-Source Voltage
735
V
VGS
Gate-to-Source Voltage
75
V
dv/dt
Peak diode recovery voltage
-55 to + 175
v/ns
EAS
Single Pulse Avalanche Energy @ L=0.3mH②
130
mJ
IAR
Avalanche Current @ L=0.3mH②
91
A
520
°C
PD @TC = 25°C
Operating Junction and Storage Temperature
TJ TSTG
Range
Units
A
Thermal Resistance
Symbol
Characteristics
Value
Unit
RθJC
Junction-to-case③
0.58
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
62
℃/W
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Page 1 of 5
Rev.1.0
SSF1007
100V N-Channel MOSFET
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
BVDSS
RDS(on)
VGS(th)
IDSS
Parameter
Min.
Drain-to-Source breakdown
100
voltage
Static Drain-to-Source
on-resistance
Gate threshold voltage
Typ.
—
Max
Units
—
V
—
5
6
mΩ
2
—
4
V
—
—
20
Drain-to-Source leakage current
—
VGS = 0V,
ID = 250μA
VGS = 10V,
ID = 75A③
VDS = VGS,
ID = 250μA
VDS = 100V,
VGS = 0V
μA
—
Conditions
250
VDS = 80V,
VGS = 0V,
TJ = 125°C
Gate-to-Source forward leakage
IGSS
—
—
100
VGS = 20V
nA
Gate-to-Source reverse leakage
—
—
-100
Qg
Total gate charge
—
243
170
Qgs
Gate-to-Source charge
—
47
—
Qgd
Gate-to-Drain("Miller") charge
—
92
—
VGS = 10V③
td(on)
Turn-on delay time
—
28
—
VDD = 65V
tr
Rise time
—
108
—
td(off)
Turn-Off delay time
—
123
—
tf
Fall time
—
120
—
VGS = 10V③
Ciss
Input capacitance
—
8456
—
VGS = 0V
Coss
Output capacitance
—
454
—
Crss
Reverse transfer capacitance
—
417
—
VGS = -20V
ID = 75A
nC
ns
pF
VDS = 50V
ID = 75A
RG = 2.7 Ω
VDS = 50V
ƒ = 500KHz
Source-Drain Ratings and Characteristics
Parameter
Min.
Typ.
Max
Units
Conditions
MOSFET symbol
IS
ISM
VSD
trr
Qrr
ton
Continuous Source
Current (Body Diode)
Pulsed Source Current
(Body Diode) ①
Diode Forward Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Forward Turn-on Time
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—
—
showing the
130
A
—
—
—
520
integral reverse
p-n junction diode.
TJ = 25°C, IS = 75A, VGS = 0V③
1.3
V
—
57
70
ns
—
156
170
nC
TJ = 25°C, IF = 75A, VDD = 20V
di/dt = 100A/μs③
TJ = 25°C, IF = 75A,Vgs=0V
di/dt = 100A/μs③
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Page 2 of 5
Rev.1.0
SSF1007
100V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Transfer Characteristics
Figure 3.Typical Capacitance Vs. Drain-to-Source Figure 4. Normalized On-Resistance Vs. Case
Voltage
Temperature
Figure 5. Drain-to-Source Breakdown Voltage vs.
Temperature
Temperature
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Figure 6. Maximum Drain Current Vs. Case
Page 3 of 5
Rev.1.0
SSF1007
100V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Switch Waveforms
Notes:
①Repetitive rating; pulse width limited by max. junction temperature.
②Limited by TJmax, starting TJ = 25°C, L = 0.3mH RG =50Ω, IAS = 70A, VGS =10V. Part
not recommended for use above this value.
③Pulse width < 1.0ms; duty cycle<2%.
④This is only applied to TO-220 package.
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Page 4 of 5
Rev.1.0
SSF1007
100V N-Channel MOSFET
Mechanical Data
TO-220
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Page 5 of 5
Rev.1.0