2N7002KG8

2N7002KG8
60V MOSFET
Main Product Characteristics
VDSS
60V
RDS(on)
7.5ohm(max.)
ID
A
SOT-363
Schematic Diagram
Features and Benefits






Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
ID
0.115
A
IDM
0.8
A
PD
0.38
W
TJ,TSTG
-55 To 150
℃
RθJA
328
℃/W
Drain [email protected] Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
www.goodark.com
Page 1 of 5
Rev.1.1
2N7002KG8
60V MOSFET
Electrical Characteristics @TA=25℃
Symbol
unless otherwise specified
Parameter
Conditions
Min
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
60
Zero Gate Voltage Drain Current
IDSS
VDS=60V,VGS=0V
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
±1
uA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2
V
Drain-Source On-State Resistance
RDS(ON)
Forward Transconductance
gFS
Input Capacitance
Clss
Typ
Max
V
1
VGS=10V, ID=0.5A
7.5
VGS=5V, ID=0.05A
7.5
VDS=10V,ID=0.2A
Units
Ω
0.08
VDS=15V,VGS=0V,
S
30
PF
6
PF
3
PF
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
VDD=30V, ID=0.2A,
20
nS
Turn-Off Delay Time
td(off)
VGS=10V,RGEN=10Ω
40
nS
F=1.0MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Min.
Typ.
Max.
Units
—
—
0.115
A
—
—
0.8
A
—
—
1.3
V
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Conditions
MOSFET symbol
D
showing the
integral reverse G
p-n junction diode.
IS=0.2A, VGS=0V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
www.goodark.com
Page 2 of 5
Rev.1.1
S
2N7002KG8
60V MOSFET
Typical Electrical and Thermal Characteristics
Figure 1: Switching
Test Circuit
Figure 2:
Switching Waveforms
Figure3. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.goodark.com
Page 3 of 5
Rev.1.1
2N7002KG8
60V MOSFET
Mechanical Data
NOTES:
1. Dimensions are inclusive of plating
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be
less than 6 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter; converted inch dimensions are not necessarily exact.
www.goodark.com
Page 4 of 5
Rev.1.1
2N7002KG8
60V MOSFET
Ordering and Marking Information
Device Marking: 702
Package (Available)
SOT-363
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tape
SOT-363
3000
Tapes/Inner
Box
10
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/Inner Inner
Box
Boxes/Carton
Box
30000
4
Duration
Sample Size
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 150℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
www.goodark.com
Page 5 of 5
Units/Carton
Box
120000
Rev.1.1