2N7002KB 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS(on) 2Ω(max.) ID 0.3A SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ESD Rating：1000V HBM 150℃ operating temperature Lead free product Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 0.3 IDM Pulsed Drain Current② 1.2 PD @TC = 25°C Power Dissipation③ 0.63 W VDS Drain-Source Voltage 60 V VGS Gate-to-Source Voltage ± 20 V -55 to +150 °C TJ TSTG Operating Junction and Storage Temperature Range A Thermal Resistance Symbol Characteristics RθJA Junction-to-ambient (t ≤ 10s) ④ www.goodark.com Page 1 of 6 Typ. Max. Units — 200 ℃/W Rev.1.0 2N7002KB 60V N-Channel MOSFET Electrical Characteristics @TA=25℃ Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) unless otherwise specified Min. Typ. Max. Units 60 — — V — 1.5 2 — — 3 Gate threshold voltage 1 — 2.5 V VDS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — 1 μA VDS = 60V,VGS = 0V IGSS Gate-to-Source forward leakage — — ±100 nA VGS=±5V,VDS=0V — — ±10 uA VGS=±20V,VDS=0V td(on) Turn-on delay time — — 25 td(off) Turn-Off delay time — — 35 ID=0.2A,RGEN=10Ω Ciss Input capacitance — 40 — VGS = 0V Coss Output capacitance — 16.6 — Crss Reverse transfer capacitance — 9.5 — Ω ns pF Conditions VGS = 0V, ID = 250μA VGS=10V, ID=0.5A VGS=5V, ID=0.05A VGS=10V, VDS=30V, VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage www.goodark.com Min. Typ. — — 0.3 A — — 1.2 A — — 1.3 V Page 2 of 6 Max. Units Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=0.2A, VGS=0V Rev.1.0 2N7002KB 60V N-Channel MOSFET Test circuits and Waveforms Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. www.goodark.com Page 3 of 6 Rev.1.0 2N7002KB 60V N-Channel MOSFET Typical Electrical and Thermal Characteristics Figure 1. Power Dissipation Vs. Case Temperature Figure 2.Typical Capacitance Vs. Drain-to-Source Voltage Figure3. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.goodark.com Page 4 of 6 Rev.1.0 2N7002KB 60V N-Channel MOSFET Mechanical Data SOT-23 PACKAGE OUTLINE DIMENSION Symbol A A1 A2 b c D E E1 e e1 L L1 θ www.goodark.com Dimension In M illimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.95TYP 1.800 2.000 0.55REF 0.300 0.500 00 80 Page 5 of 6 Dimension In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037TYP 0.071 0.079 0.022REF 0.012 0.020 00 80 Rev.1.0 2N7002KB 60V N-Channel MOSFET Ordering and Marking Information Device Marking: S72K Package (Available) SOT-23 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tape Tapes/Inner Box Units/Inner Inner Box Boxes/Carton Box Units/ Carton Box SOT-23 3000 10 30000 120000 4 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices www.goodark.com Page 6 of 6 Rev.1.0