GDSSF2301B D DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES Schematic diagram ● VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 100mΩ @ VGS=-4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM applications ●Load switch ●Power management SOT23 top view PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape width Quantity 2301B SSF2301B SOT23 Ø180mm 8 mm 3000 units ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Limit Unit -20 V VGS ±8 V ID -2.8 A IDM -10 A PD 1.25 W TJ,TSTG -55 To 150 ℃ RθJA 100 ℃/W THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) Suzhou Goodark Electronics Co., Ltd Version 1.0 GDSSF2301B ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -20 V Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V -1 μA Gate-Body Leakage Current IGSS VGS=±8V,VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1 V Drain-Source On-State Resistance RDS(ON) ON CHARACTERISTICS (Note 3) Forward Transconductance gFS -0.45 VGS=-4.5V, ID=-2.8A 80 100 VGS=-2.5V, ID=-2A 110 150 VDS=-5V,ID=-2.8A 9 S 1160 PF 210 PF PF mΩ DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss VDS=-10V,VGS=0V, F=1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 125 Turn-on Delay Time td(on) 13.6 27.2 nS Turn-on Rise Time tr 8.6 17.2 nS 73.6 147.2 nS SWITCHING CHARACTERISTICS (Note 4) Turn-Off Delay Time td(off) VDD=-10V,ID=-2.8A VGS=-4.5V,RGEN=3Ω Turn-Off Fall Time tf 34.6 69.2 nS Total Gate Charge Qg 9.6 12.7 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-10V,ID=-2.8A,VGS=-4.5V 1.1 nC 2.6 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=-0.75A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. Suzhou Goodark Electronics Co., Ltd Version 1.0 -1.2 V -2.8 A GDSSF2301B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Vdd Vgs Rgen td(on) Rl Vin D ton tr Vout 90% VOUT G toff tf td(off) 90% INVERTED 10% 10% S 90% VIN 50% 50% 10% PULSE WIDTH Figure 2:Switching Waveforms R(t),Normalized Effective Transient Thermal Impedance Figure1:Switching Test Circuit Square Wave Pluse Duration(sec) Figure 3: Normalized Maximum Transient Thermal Impedance Suzhou Goodark Electronics Co., Ltd Version 1.0 GDSSF2301B SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Symbol A A1 A2 b c D E E1 e e1 L L1 θ Dimensions in Millimeters MIN. MAX. 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950TYP 1.800 2.000 0.550REF 0.300 0.500 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Suzhou Goodark Electronics Co., Ltd Version 1.0