SW1N60D

SW1N60D
N-channel Enhancement mode TO-251/TO-92/TO251S MOSFET
Features






TO-92
TO-251
High ruggedness
RDS(ON) (Typ 6.6Ω)@VGS=10V
Gate Charge (Typ 6.8nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:Charger
BVDSS : 600V
TO-251S
: 1A
ID
RDS(ON) : 6.6Ω
1
1
2
3
2
1
3
2
2
3
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
3
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
2
3
SW I 1N60D
SW C 1N60D
SW SI 1N60D
SW1N60D
SW1N60D
SW1N60D
TO-251
TO-92
TO-251S
TUBE
TAPE
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
Value
Parameter
TO-251 TO-92 TO251S
Drain to Source Voltage
Unit
600
V
Continuous Drain Current (@TC
=25oC)
1*
A
Continuous Drain Current (@TC
=100oC)
0.63*
A
4
A
±30
V
IDM
Drain current pulsed
VGS
Gate to Source Voltage
EAS
Single pulsed Avalanche Energy
(note 2)
68
mJ
EAR
Repetitive Avalanche Energy
(note 1)
8
mJ
Peak diode Recovery dv/dt
(note 3)
5
V/ns
dv/dt
PD
TSTG, TJ
TL
(note 1)
Total power dissipation (@TC=25oC)
Derating Factor above
25oC
65.9
4.2
56.8
W
0.53
0.03
0.46
W/oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
-55 ~ + 150
oC
300
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
Unit
TO-251 TO-92 TO251S
Rthjc
Thermal resistance, Junction to case
1.9
Rthcs
Thermal resistance, Case to Sink
0.5
Rthja
Thermal resistance, Junction to ambient
90
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
30.1
113.5
2.2
oC/W
0.5
oC/W
100
oC/W
Oct. 2015. Rev. 4.0
1/6
SW1N60D
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
BVDSS
IGSS
600
V
VDS=600V, VGS=0V
VDS=480V, TC
V/oC
0.51
=125oC
1
uA
50
uA
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
4.5
V
8.5
Ω
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID = 0.5A
Forward Transconductance
VDS = 30 V, ID = 0.5A
Gfs
2.5
6.6
1
S
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
9
td(on)
Turn on delay time
5
tr
td(off)
tf
Qg
Rising time
Turn off delay time
150
VGS=0V, VDS=25V, f=1MHz
28
pF
20
VDS=300V, ID=1A, RG=25Ω
(note 4,5)
ns
13
Fall time
23.5
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
6.8
VDS=480V, VGS=10V, ID=1A
(note 4,5)
nC
1.3
3.7
Source to drain diode ratings characteristicsa
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD
Diode forward voltage drop.
IS=1A, VGS=0V
Trr
Reverse recovery time
Qrr
Reverse recovery Charge
IS=1A, VGS=0V,
dIF/dt=100A/us
Min.
Typ.
Max.
Unit
1
A
4
A
1.35
V
175
ns
1.14
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 135mH, IAS = 1A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 1A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5.
Essentially independent of operating temperature.
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Oct. 2015. Rev. 4.0
2/6
SW1N60D
Fig. 1. On-state characteristics
Fig. 3. Gate charge characteristics
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs. diode
forward voltage
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
3/6
SW1N60D
Fig. 7. Maximum safe operating area（TO-251）
Fig. 9. Maximum safe operating area（TO-92）
Fig. 11. Maximum safe operating area
（TO-251S）
Fig. 8. Transient thermal response curve （TO-251）
Fig. 10. Transient thermal response curve （TO-92）
Fig. 12. Transient thermal response curve
（TO-251S）
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
4/6
SW1N60D
Fig. 13. Capacitance Characteristics
Fig. 14. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
10V
VDS
QGD
QGS
DUT
VGS
1mA
Charge
nC
Fig. 15. Switching time test circuit & waveform
VDS
90%
RL
RGS
VDS
VDD
VIN
10VIN
DUT
10%
10%
td(on)
tr
tON
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
td(off)
tf
tOFF
Oct. 2015. Rev. 4.0
5/6
SW1N60D
Fig. 16. Unclamped Inductive switching test circuit & waveform
Fig. 17. Peak diode recovery dv/dt test circuit & waveform
DUT
+ V
DS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
Diode reverse current
VDD
Diode recovery dv/dt
10VGS
Same type
as DUT
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VDD
VF
Body diode forward voltage drop
DISCLAIRATION:
* All the data&curve within this document was tested in XI’AN SEMIPOWER TESTING&APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification Standards can also be found on the Web site (http://www.semipower.com.cn)
* Any advice, please send your proposal to [email protected]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
6/6